DE69939799D1 - Eine Halbleiterspeichervorrichtung - Google Patents

Eine Halbleiterspeichervorrichtung

Info

Publication number
DE69939799D1
DE69939799D1 DE69939799T DE69939799T DE69939799D1 DE 69939799 D1 DE69939799 D1 DE 69939799D1 DE 69939799 T DE69939799 T DE 69939799T DE 69939799 T DE69939799 T DE 69939799T DE 69939799 D1 DE69939799 D1 DE 69939799D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939799T
Other languages
English (en)
Inventor
Jae-Gu Roh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69939799D1 publication Critical patent/DE69939799D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69939799T 1998-08-13 1999-07-22 Eine Halbleiterspeichervorrichtung Expired - Lifetime DE69939799D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980032890 1998-08-13
KR1019990016004A KR100297727B1 (ko) 1998-08-13 1999-05-04 분리 제어라인의 큰 부하에 의한 스피드 손실을 방지할 수 있는반도체 메모리 장치

Publications (1)

Publication Number Publication Date
DE69939799D1 true DE69939799D1 (de) 2008-12-11

Family

ID=26634014

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939799T Expired - Lifetime DE69939799D1 (de) 1998-08-13 1999-07-22 Eine Halbleiterspeichervorrichtung

Country Status (6)

Country Link
US (1) US6097652A (de)
EP (1) EP0980075B1 (de)
JP (1) JP3914665B2 (de)
KR (1) KR100297727B1 (de)
DE (1) DE69939799D1 (de)
TW (1) TW436803B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6285612B1 (en) * 2000-06-26 2001-09-04 International Business Machines Corporation Reduced bit line equalization level sensing scheme
KR100395877B1 (ko) * 2000-11-10 2003-08-25 삼성전자주식회사 반도체 메모리의 데이타 감지 장치
KR100650712B1 (ko) * 2000-12-27 2006-11-27 주식회사 하이닉스반도체 게이트 분리 센스 앰프
JP2003016785A (ja) * 2001-06-28 2003-01-17 Sharp Corp 半導体記憶装置およびそれを用いた情報機器
JP2003196982A (ja) * 2001-12-27 2003-07-11 Mitsubishi Electric Corp 半導体記憶装置
KR100416803B1 (ko) * 2002-05-06 2004-01-31 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 프리차지 방법
DE10339894B4 (de) * 2003-08-29 2006-04-06 Infineon Technologies Ag Leseverstärker-Zuschalt/Abschalt-Schaltungsanordnung
TWI220258B (en) * 2003-10-22 2004-08-11 Winbond Electronics Corp Device and method for breaking leakage current path
JP2005135458A (ja) * 2003-10-28 2005-05-26 Renesas Technology Corp 半導体記憶装置
US8250295B2 (en) * 2004-01-05 2012-08-21 Smart Modular Technologies, Inc. Multi-rank memory module that emulates a memory module having a different number of ranks
US7289386B2 (en) * 2004-03-05 2007-10-30 Netlist, Inc. Memory module decoder
US7532537B2 (en) * 2004-03-05 2009-05-12 Netlist, Inc. Memory module with a circuit providing load isolation and memory domain translation
US7916574B1 (en) 2004-03-05 2011-03-29 Netlist, Inc. Circuit providing load isolation and memory domain translation for memory module
US7046578B2 (en) * 2004-08-23 2006-05-16 Micron Technology, Inc. Method and apparatus for memory device wordline
KR100571650B1 (ko) * 2005-03-31 2006-04-17 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
US20060277355A1 (en) * 2005-06-01 2006-12-07 Mark Ellsberry Capacity-expanding memory device
US8516185B2 (en) 2009-07-16 2013-08-20 Netlist, Inc. System and method utilizing distributed byte-wise buffers on a memory module
US8417870B2 (en) 2009-07-16 2013-04-09 Netlist, Inc. System and method of increasing addressable memory space on a memory board
US8154901B1 (en) 2008-04-14 2012-04-10 Netlist, Inc. Circuit providing load isolation and noise reduction
JP2010176740A (ja) * 2009-01-28 2010-08-12 Elpida Memory Inc 半導体記憶装置
US9128632B2 (en) 2009-07-16 2015-09-08 Netlist, Inc. Memory module with distributed data buffers and method of operation
KR20160038034A (ko) 2013-07-27 2016-04-06 넷리스트 인코포레이티드 로컬 동기화를 갖는 메모리 모듈
KR102326661B1 (ko) 2015-08-13 2021-11-16 삼성전자주식회사 이퀄라이저 장치 및 이를 포함하는 메모리 장치
CN115565566A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 读出电路结构
CN115691587B (zh) * 2022-10-31 2024-05-17 长鑫存储技术有限公司 灵敏放大器及控制方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2912689B2 (ja) * 1990-08-20 1999-06-28 富士通株式会社 半導体記憶装置
JPH04186593A (ja) * 1990-11-21 1992-07-03 Mitsubishi Electric Corp 半導体記憶装置
JPH076584A (ja) * 1992-02-18 1995-01-10 Oki Micro Design Miyazaki:Kk 半導体集積回路装置
JPH0644778A (ja) * 1992-07-24 1994-02-18 Ricoh Co Ltd 半導体メモリ装置
KR950004870B1 (ko) * 1992-11-24 1995-05-15 삼성전자 주식회사 번인 모드에서 분리게이트의 신뢰성 개선회로
US5561630A (en) * 1995-09-28 1996-10-01 International Business Machines Coporation Data sense circuit for dynamic random access memories
JPH09265791A (ja) * 1996-03-28 1997-10-07 Nec Corp 半導体記憶装置
JP3712150B2 (ja) * 1996-10-25 2005-11-02 株式会社日立製作所 半導体集積回路装置
KR19980037921A (ko) * 1996-11-22 1998-08-05 김광호 불휘발성 반도체 메모리 장치의 감지증폭회로
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
US6016279A (en) * 1998-03-30 2000-01-18 Vanguard International Semiconductor Corporation DRAM sensing scheme and isolation circuit

Also Published As

Publication number Publication date
KR100297727B1 (ko) 2001-09-26
JP3914665B2 (ja) 2007-05-16
JP2000057762A (ja) 2000-02-25
EP0980075A1 (de) 2000-02-16
EP0980075B1 (de) 2008-10-29
KR20000016862A (ko) 2000-03-25
TW436803B (en) 2001-05-28
US6097652A (en) 2000-08-01

Similar Documents

Publication Publication Date Title
DE69939799D1 (de) Eine Halbleiterspeichervorrichtung
DE69935182D1 (de) Halbleiteranordnung
DE69826955D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69526460T2 (de) Halbleiterspeicheranordnung
DE60102257D1 (de) Halbleiterspeicheranordnung
DE69521159T2 (de) Halbleiterspeicheranordnung
DE69912565D1 (de) Halbleiteranordnung
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69726698T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69617391T2 (de) Halbleiterspeicheranordnung
DE69835635D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69934853D1 (de) Halbleiterspeicheranordnung
DE69909280D1 (de) Halbleiterspeicher
DE69731015D1 (de) Halbleiterspeicheranordnung
DE69923374D1 (de) Halbleiteranordnung
DE69525583T2 (de) Halbleiterspeicheranordnung
DE69823753D1 (de) Synchrone Halbleiterspeicheranordnung
DE69832683D1 (de) Nichtflüchtiges Halbleiterspeicherbauelement
DE69823427D1 (de) Halbleiterspeicheranordnung
DE69530266T2 (de) Halbleiterspeicheranordnung
DE69819961D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69430944D1 (de) Halbleiterspeicheranordnung
DE69902712T2 (de) Halbleiterspeicheranordnung
DE69534964D1 (de) Halbleiterspeicheranordnung
DE69833348D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition