DE69730306D1 - Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher - Google Patents
Dateneinschreibschaltung für nichtflüchtigen HalbleiterspeicherInfo
- Publication number
- DE69730306D1 DE69730306D1 DE69730306T DE69730306T DE69730306D1 DE 69730306 D1 DE69730306 D1 DE 69730306D1 DE 69730306 T DE69730306 T DE 69730306T DE 69730306 T DE69730306 T DE 69730306T DE 69730306 D1 DE69730306 D1 DE 69730306D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- data write
- write circuit
- volatile semiconductor
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34576596 | 1996-12-25 | ||
JP34576596A JP3401395B2 (ja) | 1996-12-25 | 1996-12-25 | 不揮発性半導体メモリのデータ書き込み回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69730306D1 true DE69730306D1 (de) | 2004-09-23 |
DE69730306T2 DE69730306T2 (de) | 2005-08-18 |
Family
ID=18378829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69730306T Expired - Lifetime DE69730306T2 (de) | 1996-12-25 | 1997-12-23 | Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher |
Country Status (6)
Country | Link |
---|---|
US (1) | US5910918A (de) |
EP (1) | EP0851432B1 (de) |
JP (1) | JP3401395B2 (de) |
KR (1) | KR100294311B1 (de) |
DE (1) | DE69730306T2 (de) |
TW (1) | TW342499B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3883687B2 (ja) * | 1998-02-16 | 2007-02-21 | 株式会社ルネサステクノロジ | 半導体装置、メモリカード及びデータ処理システム |
JP2000040382A (ja) * | 1998-07-23 | 2000-02-08 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
TW477065B (en) * | 2001-01-30 | 2002-02-21 | Ememory Technology Inc | Manufacturing method of flash memory cell structure with dynamic-like write-in/erasing through channel and its operating method |
US6590810B2 (en) * | 2001-08-15 | 2003-07-08 | Winbond Electronics Corporation | Source biasing circuit for flash EEPROM |
JP4454896B2 (ja) * | 2001-09-27 | 2010-04-21 | シャープ株式会社 | 仮想接地型不揮発性半導体記憶装置 |
JP2004348818A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置の書込制御方法及びシステム並びに携帯電子機器 |
US20080237696A1 (en) * | 2004-07-01 | 2008-10-02 | Chih-Hsin Wang | Alignment protection in non-volatile memory and array |
CN103811061B (zh) * | 2014-03-05 | 2016-08-24 | 上海华虹宏力半导体制造有限公司 | Eeprom及其存储阵列 |
CN106297871B (zh) * | 2016-07-25 | 2019-12-03 | 中电海康集团有限公司 | 一种自旋力矩转移磁性随机存储器的写电路结构 |
SE540822C2 (en) * | 2017-03-30 | 2018-11-20 | Valmet Oy | A method of threading a fibrous web and a reel-up for carrying out the method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6432494A (en) * | 1987-07-27 | 1989-02-02 | Mitsubishi Electric Corp | Non-volatile semiconductor storage device |
GB8807225D0 (en) * | 1988-03-25 | 1988-04-27 | Hughes Microelectronics Ltd | Nonvolatile ram cell |
US5363330A (en) * | 1991-01-28 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming |
US5361227A (en) * | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
KR960000616B1 (ko) * | 1993-01-13 | 1996-01-10 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
US5422842A (en) * | 1993-07-08 | 1995-06-06 | Sundisk Corporation | Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells |
JP2922116B2 (ja) * | 1993-09-02 | 1999-07-19 | 株式会社東芝 | 半導体記憶装置 |
JP3153730B2 (ja) * | 1995-05-16 | 2001-04-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
1996
- 1996-12-25 JP JP34576596A patent/JP3401395B2/ja not_active Expired - Fee Related
-
1997
- 1997-08-26 TW TW086112276A patent/TW342499B/zh not_active IP Right Cessation
- 1997-08-27 US US08/924,417 patent/US5910918A/en not_active Expired - Lifetime
- 1997-12-12 KR KR1019970068004A patent/KR100294311B1/ko not_active IP Right Cessation
- 1997-12-23 DE DE69730306T patent/DE69730306T2/de not_active Expired - Lifetime
- 1997-12-23 EP EP97310489A patent/EP0851432B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH10188583A (ja) | 1998-07-21 |
EP0851432A2 (de) | 1998-07-01 |
US5910918A (en) | 1999-06-08 |
EP0851432B1 (de) | 2004-08-18 |
TW342499B (en) | 1998-10-11 |
DE69730306T2 (de) | 2005-08-18 |
KR19980064051A (ko) | 1998-10-07 |
KR100294311B1 (ko) | 2001-09-17 |
EP0851432A3 (de) | 1999-06-09 |
JP3401395B2 (ja) | 2003-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 851432 Country of ref document: EP Representative=s name: PATENTANWAELTE RUFF, WILHELM, BEIER, DAUSTER & PAR |