DE69425367T2 - Leseschaltkreis für Speichermatrixzelle - Google Patents

Leseschaltkreis für Speichermatrixzelle

Info

Publication number
DE69425367T2
DE69425367T2 DE69425367T DE69425367T DE69425367T2 DE 69425367 T2 DE69425367 T2 DE 69425367T2 DE 69425367 T DE69425367 T DE 69425367T DE 69425367 T DE69425367 T DE 69425367T DE 69425367 T2 DE69425367 T2 DE 69425367T2
Authority
DE
Germany
Prior art keywords
read circuit
memory matrix
matrix cell
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425367T
Other languages
English (en)
Other versions
DE69425367D1 (de
Inventor
Luigi Pascucci
Carla Maria Golla
Marco Maccarrone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69425367D1 publication Critical patent/DE69425367D1/de
Application granted granted Critical
Publication of DE69425367T2 publication Critical patent/DE69425367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
DE69425367T 1994-04-19 1994-04-19 Leseschaltkreis für Speichermatrixzelle Expired - Fee Related DE69425367T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830182A EP0678874B1 (de) 1994-04-19 1994-04-19 Leseschaltkreis für Speichermatrixzelle

Publications (2)

Publication Number Publication Date
DE69425367D1 DE69425367D1 (de) 2000-08-31
DE69425367T2 true DE69425367T2 (de) 2001-02-15

Family

ID=8218427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425367T Expired - Fee Related DE69425367T2 (de) 1994-04-19 1994-04-19 Leseschaltkreis für Speichermatrixzelle

Country Status (4)

Country Link
US (1) US5563826A (de)
EP (1) EP0678874B1 (de)
JP (1) JP2675277B2 (de)
DE (1) DE69425367T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734390B1 (fr) * 1995-05-19 1997-06-13 Sgs Thomson Microelectronics Circuit de detection de courant pour la lecture d'une memoire en circuit integre
DE69629669T2 (de) * 1996-06-18 2004-07-08 Stmicroelectronics S.R.L., Agrate Brianza Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
FR2753829B1 (fr) * 1996-09-24 1998-11-13 Circuit de lecture pour memoire non volatile fonctionnant avec une basse tension d'alimentation
US5883826A (en) * 1996-09-30 1999-03-16 Wendell; Dennis Lee Memory block select using multiple word lines to address a single memory cell row
US5920517A (en) * 1996-09-30 1999-07-06 Advanced Micro Devices, Inc. Memory array test and characterization using isolated memory cell power supply
US5940334A (en) * 1996-09-30 1999-08-17 Advanced Micro Devices, Inc. Memory interface circuit including bypass data forwarding with essentially no delay
FR2755286B1 (fr) * 1996-10-25 1999-01-22 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore
FR2756409B1 (fr) * 1996-11-28 1999-01-15 Sgs Thomson Microelectronics Circuit de lecture pour memoire
FR2762435B1 (fr) * 1997-04-16 2000-12-08 Sgs Thomson Microelectronics Circuit de lecture de memoire avec dispositif de precharge a commande dynamique
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
US5920515A (en) * 1997-09-26 1999-07-06 Advanced Micro Devices, Inc. Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device
JP3505373B2 (ja) * 1997-11-14 2004-03-08 株式会社東芝 半導体記憶装置
DE69827109D1 (de) * 1998-02-13 2004-11-25 St Microelectronics Srl Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung
JPH11273388A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
EP1058270B1 (de) * 1999-06-04 2007-03-21 STMicroelectronics S.r.l. Vorspannungsstufe zum Vorspannen des Drains einer nichtflüchtigen Speicherzelle während des Auslesens
IT1314042B1 (it) * 1999-10-11 2002-12-03 St Microelectronics Srl Circuito amplificatore di lettura per memorie, ad elevata capacita'di discriminazione di livelli di corrente.
IT1308856B1 (it) * 1999-10-29 2002-01-11 St Microelectronics Srl Circuito di lettura per una memoria non volatile.
FR2801419B1 (fr) 1999-11-18 2003-07-25 St Microelectronics Sa Procede et dispositif de lecture pour memoire en circuit integre
IT1318892B1 (it) * 2000-09-15 2003-09-19 St Microelectronics Srl Circuito di lettura per memorie non volatili a semiconduttore.
AU2003201101A1 (en) * 2002-02-06 2003-09-02 Koninklijke Philips Electronics N.V. Reading circuit for reading a memory cell
JP4772363B2 (ja) * 2005-04-12 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
CN102081959B (zh) * 2009-11-26 2013-06-12 中国科学院微电子研究所 一种存储器读出电路以及存储器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
JPH0682520B2 (ja) * 1987-07-31 1994-10-19 株式会社東芝 半導体メモリ
JP2507529B2 (ja) * 1988-03-31 1996-06-12 株式会社東芝 不揮発性半導体記憶装置
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JPH06259975A (ja) * 1993-03-05 1994-09-16 Toshiba Corp 不揮発性メモリ回路
US5396467A (en) * 1994-03-30 1995-03-07 United Microelectronics Corp. Sense amplifier

Also Published As

Publication number Publication date
JPH0845282A (ja) 1996-02-16
EP0678874A1 (de) 1995-10-25
JP2675277B2 (ja) 1997-11-12
DE69425367D1 (de) 2000-08-31
US5563826A (en) 1996-10-08
EP0678874B1 (de) 2000-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee