DE69630268D1 - Datenleseschaltung einer nichtflüchtigen Halbleiterspeicheranordnung - Google Patents
Datenleseschaltung einer nichtflüchtigen HalbleiterspeicheranordnungInfo
- Publication number
- DE69630268D1 DE69630268D1 DE69630268T DE69630268T DE69630268D1 DE 69630268 D1 DE69630268 D1 DE 69630268D1 DE 69630268 T DE69630268 T DE 69630268T DE 69630268 T DE69630268 T DE 69630268T DE 69630268 D1 DE69630268 D1 DE 69630268D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- data reading
- reading circuit
- volatile semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR4150695 | 1995-11-15 | ||
KR1019950041506A KR0172403B1 (ko) | 1995-11-15 | 1995-11-15 | 불휘발성 반도체 메모리의 데이타 리드회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69630268D1 true DE69630268D1 (de) | 2003-11-13 |
DE69630268T2 DE69630268T2 (de) | 2004-08-26 |
Family
ID=19434230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69630268T Expired - Fee Related DE69630268T2 (de) | 1995-11-15 | 1996-11-06 | Datenleseschaltung einer nichtflüchtigen Halbleiterspeicheranordnung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5748529A (de) |
EP (1) | EP0776012B1 (de) |
JP (1) | JPH09204788A (de) |
KR (1) | KR0172403B1 (de) |
DE (1) | DE69630268T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5862074A (en) * | 1996-10-04 | 1999-01-19 | Samsung Electronics Co., Ltd. | Integrated circuit memory devices having reconfigurable nonvolatile multi-bit memory cells therein and methods of operating same |
JP3730381B2 (ja) * | 1997-10-21 | 2006-01-05 | 株式会社東芝 | 半導体記憶装置 |
KR100266745B1 (ko) * | 1997-12-29 | 2000-09-15 | 윤종용 | 멀티-비트 데이터를 저장하기 위한 반도체 메모리 장치 |
KR100290283B1 (ko) | 1998-10-30 | 2001-05-15 | 윤종용 | 불휘발성 반도체 메모리 장치 및 그의 워드 라인 구동 방법 |
JP3863330B2 (ja) * | 1999-09-28 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体メモリ |
US6175523B1 (en) * | 1999-10-25 | 2001-01-16 | Advanced Micro Devices, Inc | Precharging mechanism and method for NAND-based flash memory devices |
KR100319559B1 (ko) * | 1999-11-01 | 2002-01-05 | 윤종용 | 문턱 전압 분포들 사이의 마진을 일정하게 유지할 수 있는멀티-스테이트 불휘발성 반도체 메모리 장치 |
EP1326258B1 (de) * | 2001-12-27 | 2016-03-23 | STMicroelectronics Srl | Nichtflüchtiger Phasenänderungsspeicher mit nur einer Speisespannung, Kaskoden-Spaltenauswahl und gleichzeitigen Wortlese- und -schreiboperationen |
EP1450373B1 (de) | 2003-02-21 | 2008-08-27 | STMicroelectronics S.r.l. | Phasenwechselspeicheranordnung |
EP1324345A1 (de) | 2001-12-27 | 2003-07-02 | STMicroelectronics S.r.l. | Nichtflüchtige Speicheranordnung mit einziger Speisespannung mit Kaskode-Spaltendekodiererung |
DE10206186B4 (de) | 2002-02-14 | 2010-01-28 | Infineon Technologies Ag | Speichermatrix und Verfahren zur Absicherung einer Speichermatrix |
KR100466981B1 (ko) * | 2002-03-04 | 2005-01-24 | 삼성전자주식회사 | 저전압 불휘발성 반도체 메모리 장치 |
JP2004281032A (ja) * | 2003-02-25 | 2004-10-07 | Rohm Co Ltd | 半導体記憶装置 |
US6977842B2 (en) * | 2003-09-16 | 2005-12-20 | Micron Technology, Inc. | Boosted substrate/tub programming for flash memories |
JP2006004514A (ja) * | 2004-06-17 | 2006-01-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
EP1610343B1 (de) * | 2004-06-24 | 2007-12-19 | STMicroelectronics S.r.l. | Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung |
US7379333B2 (en) * | 2004-10-28 | 2008-05-27 | Samsung Electronics Co., Ltd. | Page-buffer and non-volatile semiconductor memory including page buffer |
US7251160B2 (en) * | 2005-03-16 | 2007-07-31 | Sandisk Corporation | Non-volatile memory and method with power-saving read and program-verify operations |
KR100680486B1 (ko) * | 2005-03-30 | 2007-02-08 | 주식회사 하이닉스반도체 | 향상된 동작 성능을 가지는 플래시 메모리 장치의 페이지버퍼 회로 및 그 독출 및 프로그램 동작 제어 방법 |
KR100680484B1 (ko) * | 2005-03-30 | 2007-02-08 | 주식회사 하이닉스반도체 | 개선된 독출 동작 기능을 가지는 플래시 메모리 장치의페이지 버퍼 회로 및 그 독출 동작 제어 방법 |
KR100666184B1 (ko) * | 2006-02-02 | 2007-01-09 | 삼성전자주식회사 | 하부 비트라인들과 상부 비트라인들이 전압제어블락을공유하는 3-레벨 불휘발성 반도체 메모리 장치 |
US7663922B2 (en) * | 2006-02-02 | 2010-02-16 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory devices with lower and upper bit lines sharing a voltage control block, and memory cards and systems having the same |
KR100736408B1 (ko) * | 2006-06-10 | 2007-07-09 | 삼성전자주식회사 | 비트 라인의 전압 강하를 보상할 수 있는 반도체 장치와 그보상 방법 |
CN102117657B (zh) * | 2009-12-30 | 2014-05-28 | 上海华虹集成电路有限责任公司 | Eeprom的读取电路 |
US9997250B2 (en) * | 2016-03-17 | 2018-06-12 | SK Hynix Inc. | Non-volatile memory device with a plurality of cache latches and switches and method for operating non-volatile memory device |
CN110945586B (zh) | 2019-11-01 | 2021-01-29 | 长江存储科技有限责任公司 | 用于闪存器件的感测放大器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2504743B2 (ja) * | 1985-03-18 | 1996-06-05 | 日本電気株式会社 | 半導体記憶装置 |
US4999812A (en) * | 1988-11-23 | 1991-03-12 | National Semiconductor Corp. | Architecture for a flash erase EEPROM memory |
KR910007434B1 (ko) * | 1988-12-15 | 1991-09-26 | 삼성전자 주식회사 | 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법 |
US5237534A (en) * | 1989-04-27 | 1993-08-17 | Kabushiki Kaisha Toshiba | Data sense circuit for a semiconductor nonvolatile memory device |
JPH0371497A (ja) * | 1989-08-11 | 1991-03-27 | Casio Comput Co Ltd | 半導体メモリの読出し方法 |
JP2723695B2 (ja) * | 1991-07-02 | 1998-03-09 | シャープ株式会社 | 半導体記憶装置 |
JP2991546B2 (ja) * | 1991-10-07 | 1999-12-20 | 株式会社東芝 | 半導体集積回路 |
US5440506A (en) * | 1992-08-14 | 1995-08-08 | Harris Corporation | Semiconductor ROM device and method |
JP3011570B2 (ja) * | 1993-04-30 | 2000-02-21 | 株式会社東芝 | 半導体メモリ |
JPH0757491A (ja) * | 1993-08-12 | 1995-03-03 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
KR0169420B1 (ko) * | 1995-10-17 | 1999-02-01 | 김광호 | 불 휘발성 반도체 메모리의 데이타 리드 방법 및 그에 따른 회로 |
-
1995
- 1995-11-15 KR KR1019950041506A patent/KR0172403B1/ko not_active IP Right Cessation
-
1996
- 1996-11-06 EP EP96308036A patent/EP0776012B1/de not_active Expired - Lifetime
- 1996-11-06 DE DE69630268T patent/DE69630268T2/de not_active Expired - Fee Related
- 1996-11-14 US US08/749,332 patent/US5748529A/en not_active Expired - Lifetime
- 1996-11-15 JP JP8304796A patent/JPH09204788A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR970029874A (ko) | 1997-06-26 |
US5748529A (en) | 1998-05-05 |
EP0776012A3 (de) | 1999-03-10 |
JPH09204788A (ja) | 1997-08-05 |
DE69630268T2 (de) | 2004-08-26 |
EP0776012B1 (de) | 2003-10-08 |
KR0172403B1 (ko) | 1999-03-30 |
EP0776012A2 (de) | 1997-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |