ITMI930074A0 - Dispositivo di memoria a semiconduttore avente elemento di comando di parola - Google Patents

Dispositivo di memoria a semiconduttore avente elemento di comando di parola

Info

Publication number
ITMI930074A0
ITMI930074A0 ITMI930074A ITMI930074A ITMI930074A0 IT MI930074 A0 ITMI930074 A0 IT MI930074A0 IT MI930074 A ITMI930074 A IT MI930074A IT MI930074 A ITMI930074 A IT MI930074A IT MI930074 A0 ITMI930074 A0 IT MI930074A0
Authority
IT
Italy
Prior art keywords
memory device
semiconductor memory
control element
word control
word
Prior art date
Application number
ITMI930074A
Other languages
English (en)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI930074A0 publication Critical patent/ITMI930074A0/it
Publication of ITMI930074A1 publication Critical patent/ITMI930074A1/it
Application granted granted Critical
Publication of IT1263772B publication Critical patent/IT1263772B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
ITMI930074A 1992-03-27 1993-01-19 Dispositivo di memoria a semiconduttore avente un elemento di comando di parola IT1263772B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07113692A JP3179848B2 (ja) 1992-03-27 1992-03-27 半導体記憶装置

Publications (3)

Publication Number Publication Date
ITMI930074A0 true ITMI930074A0 (it) 1993-01-19
ITMI930074A1 ITMI930074A1 (it) 1994-07-19
IT1263772B IT1263772B (it) 1996-08-29

Family

ID=13451868

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI930074A IT1263772B (it) 1992-03-27 1993-01-19 Dispositivo di memoria a semiconduttore avente un elemento di comando di parola

Country Status (6)

Country Link
US (1) US5282171A (it)
JP (1) JP3179848B2 (it)
KR (1) KR960011203B1 (it)
DE (1) DE4236456C2 (it)
IT (1) IT1263772B (it)
TW (1) TW201851B (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111084A (ja) * 1993-10-13 1995-04-25 Oki Micro Design Miyazaki:Kk 半導体集積回路装置
KR960011206B1 (ko) * 1993-11-09 1996-08-21 삼성전자 주식회사 반도체메모리장치의 워드라인구동회로
JP3080829B2 (ja) * 1994-02-17 2000-08-28 株式会社東芝 カスケード型メモリセル構造を有した多バンクシンクロナスメモリシステム
JPH0887881A (ja) * 1994-09-19 1996-04-02 Mitsubishi Electric Corp 半導体記憶装置
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
US5633832A (en) * 1995-09-26 1997-05-27 Alliance Semiconductor Corporation Reduced area word line driving circuit for random access memory
KR100220939B1 (ko) * 1995-12-29 1999-09-15 김영환 반도체 메모리 장치의 워드라인 구동방법
US5737267A (en) * 1996-04-10 1998-04-07 Townsend And Townsend And Crew Llp Word line driver circuit
US5781497A (en) * 1996-08-02 1998-07-14 Alliance Semiconductor Corp. Random access memory word line select circuit having rapid dynamic deselect
US5914908A (en) * 1997-03-14 1999-06-22 Hyundai Electronics America Method of operating a boosted wordline
US6160749A (en) * 1997-03-14 2000-12-12 Hyundai Electronics America Pump control circuit
US6243316B1 (en) * 2000-02-09 2001-06-05 Advanced Micro Devices, Inc. Voltage boost reset circuit for a flash memory
JP2007109310A (ja) * 2005-10-13 2007-04-26 Elpida Memory Inc 電源制御回路及びそれを備えた半導体装置
JP2007293933A (ja) * 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4984759B2 (ja) * 2006-09-05 2012-07-25 富士通セミコンダクター株式会社 半導体記憶装置
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
CN107481748B (zh) * 2016-06-07 2020-06-05 中芯国际集成电路制造(上海)有限公司 一种字线电压生成电路、半导体器件及电子装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649523A (en) * 1985-02-08 1987-03-10 At&T Bell Laboratories Semiconductor memory with boosted word line
JPS61296598A (ja) * 1985-06-21 1986-12-27 Mitsubishi Electric Corp Ｍｏｓダイナミツクｒａｍのダミ−ワ−ド線駆動回路
JPS62136919A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp ドライバ−回路
JPS63104290A (ja) * 1986-10-21 1988-05-09 Nec Corp 半導体記憶装置
JPH0194591A (ja) * 1987-10-06 1989-04-13 Fujitsu Ltd 半導体メモリ

Also Published As

Publication number Publication date
JP3179848B2 (ja) 2001-06-25
KR930020460A (ko) 1993-10-19
DE4236456A1 (de) 1993-09-30
IT1263772B (it) 1996-08-29
US5282171A (en) 1994-01-25
KR960011203B1 (ko) 1996-08-21
TW201851B (en) 1993-03-11
DE4236456C2 (de) 1997-01-16
JPH05274875A (ja) 1993-10-22
ITMI930074A1 (it) 1994-07-19

Similar Documents

Publication Publication Date Title
DE69326370D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69430683D1 (de) Halbleiterspeicheranordnung
DE69232356D1 (de) Halbleiterspeicheranordnung
ITMI942252A0 (it) Circuito di comando di linea di parola di un dispositivo di memoria a semiconduttore.
DE69328517D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69325152D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69420591D1 (de) Nichtflüchtige Halbleiterspeicher
ITMI930074A0 (it) Dispositivo di memoria a semiconduttore avente elemento di comando di parola
DE69417712D1 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69331562D1 (de) Halbleiterspeicheranordnung
DE69615483D1 (de) Leseverstärkerschaltung einer nichtflüchtigen Halbleiterspeicheranordnung
DE69230750D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69322747D1 (de) Halbleiterspeicheranordnung
DE69432882D1 (de) Halbleiterspeicheranordnung
DE69317937D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69322725D1 (de) Halbleiterspeicheranordnung
KR940011024U (ko) 반도체 메모리 장치
DE69321700D1 (de) Nicht-flüchtige Halbleiterspeicher
DE69423988D1 (de) Nichtflüchige Halbleiterspeicheranordnung mit Befehlssteuerungssystem
DE69427835D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69326494D1 (de) Halbleiterspeicheranordnung
DE69332966D1 (de) Halbleiterspeicherbauelement
DE69406037D1 (de) Nicht-flüchtige Halbleiterspeicheranordnung
DE69218878D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69322436D1 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19960429