DE69715521D1 - Erste Lesezyklusschaltung für Halbleiterspeicher - Google Patents

Erste Lesezyklusschaltung für Halbleiterspeicher

Info

Publication number
DE69715521D1
DE69715521D1 DE69715521T DE69715521T DE69715521D1 DE 69715521 D1 DE69715521 D1 DE 69715521D1 DE 69715521 T DE69715521 T DE 69715521T DE 69715521 T DE69715521 T DE 69715521T DE 69715521 D1 DE69715521 D1 DE 69715521D1
Authority
DE
Germany
Prior art keywords
read cycle
semiconductor memories
cycle circuit
circuit
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69715521T
Other languages
English (en)
Other versions
DE69715521T2 (de
Inventor
Yaron Slezak
Boaz Eitan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69715521D1 publication Critical patent/DE69715521D1/de
Publication of DE69715521T2 publication Critical patent/DE69715521T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
DE69715521T 1996-06-13 1997-06-03 Erste Lesezyklusschaltung für Halbleiterspeicher Expired - Fee Related DE69715521T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/665,191 US5696730A (en) 1996-06-13 1996-06-13 First read cycle circuit for semiconductor memory

Publications (2)

Publication Number Publication Date
DE69715521D1 true DE69715521D1 (de) 2002-10-24
DE69715521T2 DE69715521T2 (de) 2003-04-24

Family

ID=24669093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715521T Expired - Fee Related DE69715521T2 (de) 1996-06-13 1997-06-03 Erste Lesezyklusschaltung für Halbleiterspeicher

Country Status (4)

Country Link
US (1) US5696730A (de)
EP (1) EP0813207B1 (de)
JP (1) JPH1092187A (de)
DE (1) DE69715521T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100226491B1 (ko) * 1996-12-28 1999-10-15 김영환 반도체 메모리에서 비트라인 감지 증폭기의 풀업/풀다운 전압제 공을 위한 디바이스 및 그 구성 방법
US5970022A (en) * 1997-03-21 1999-10-19 Winbond Electronics Corporation Semiconductor memory device with reduced read disturbance
US6249827B1 (en) * 1997-08-11 2001-06-19 Advanced Memory International, Inc. Method for transferring data associated with a read/write command between a processor and a reader circuit using a plurality of clock lines
AU756069B2 (en) * 1998-11-06 2003-01-02 Engen Holdings Pty Ltd A system for controlling a rotary device
US7002854B2 (en) * 2000-07-25 2006-02-21 Nec Electronics Corp. Internal voltage level control circuit and semiconductor memory device as well as method of controlling the same
US7215585B2 (en) * 2005-09-01 2007-05-08 Micron Technology, Inc. Method and apparatus for synchronizing data from memory arrays
KR100738965B1 (ko) * 2006-03-07 2007-07-12 주식회사 하이닉스반도체 반도체 메모리 장치의 동기 모드 감지 회로 및 방법
KR101949501B1 (ko) * 2012-08-28 2019-02-18 에스케이하이닉스 주식회사 반도체 장치 및 이를 위한 데이터 출력 회로
KR102090677B1 (ko) * 2013-09-16 2020-03-18 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 동작 방법
US9704581B2 (en) * 2014-12-27 2017-07-11 Intel Corporation Voltage ramping detection
CN108053853A (zh) * 2017-12-25 2018-05-18 珠海博雅科技有限公司 字线电压产生电路和方法、编程装置和方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3212396B2 (ja) * 1993-01-14 2001-09-25 富士通株式会社 不揮発性半導体記憶装置
KR970003810B1 (ko) * 1993-04-14 1997-03-22 삼성전자 주식회사 어드레스 천이 검출회로를 내장하는 불휘발성 반도체 집적회로
US5345424A (en) * 1993-06-30 1994-09-06 Intel Corporation Power-up reset override architecture and circuit for flash memory

Also Published As

Publication number Publication date
EP0813207A2 (de) 1997-12-17
EP0813207B1 (de) 2002-09-18
DE69715521T2 (de) 2003-04-24
JPH1092187A (ja) 1998-04-10
EP0813207A3 (de) 1998-12-23
US5696730A (en) 1997-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee