DE69614032D1 - Stromdetektorschaltung zum Lesen einer integrierten Speicherschaltung - Google Patents

Stromdetektorschaltung zum Lesen einer integrierten Speicherschaltung

Info

Publication number
DE69614032D1
DE69614032D1 DE69614032T DE69614032T DE69614032D1 DE 69614032 D1 DE69614032 D1 DE 69614032D1 DE 69614032 T DE69614032 T DE 69614032T DE 69614032 T DE69614032 T DE 69614032T DE 69614032 D1 DE69614032 D1 DE 69614032D1
Authority
DE
Germany
Prior art keywords
circuit
reading
current detector
integrated memory
memory circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69614032T
Other languages
English (en)
Other versions
DE69614032T2 (de
Inventor
Emilio Yero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE69614032D1 publication Critical patent/DE69614032D1/de
Application granted granted Critical
Publication of DE69614032T2 publication Critical patent/DE69614032T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
DE69614032T 1995-05-19 1996-05-15 Stromdetektorschaltung zum Lesen einer integrierten Speicherschaltung Expired - Fee Related DE69614032T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9506008A FR2734390B1 (fr) 1995-05-19 1995-05-19 Circuit de detection de courant pour la lecture d'une memoire en circuit integre

Publications (2)

Publication Number Publication Date
DE69614032D1 true DE69614032D1 (de) 2001-08-30
DE69614032T2 DE69614032T2 (de) 2001-11-15

Family

ID=9479205

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69614032T Expired - Fee Related DE69614032T2 (de) 1995-05-19 1996-05-15 Stromdetektorschaltung zum Lesen einer integrierten Speicherschaltung

Country Status (5)

Country Link
US (1) US5699295A (de)
EP (1) EP0743650B1 (de)
JP (1) JPH08321196A (de)
DE (1) DE69614032T2 (de)
FR (1) FR2734390B1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034908A (en) * 1997-02-11 2000-03-07 Artisan Components, Inc. Sense amplifying methods and sense amplification integrated devices
US5717633A (en) * 1997-02-11 1998-02-10 Artisan Components, Inc. Low power consuming memory sense amplifying circuitry
FR2760888B1 (fr) * 1997-03-11 1999-05-07 Sgs Thomson Microelectronics Circuit de lecture pour memoire adapte a la mesure des courants de fuite
DE69723227T2 (de) * 1997-04-14 2004-06-03 Stmicroelectronics S.R.L., Agrate Brianza Hochpräzisionsanalogleseschaltkreis für Speichermatrizen, insbesondere für Flash-Analogspeichermatrizen
US5886929A (en) * 1997-04-21 1999-03-23 Artisan Components, Inc. High speed addressing buffer and methods for implementing same
US5889715A (en) * 1997-04-23 1999-03-30 Artisan Components, Inc. Voltage sense amplifier and methods for implementing the same
US5805500A (en) * 1997-06-18 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Circuit and method for generating a read reference signal for nonvolatile memory cells
IT1293644B1 (it) * 1997-07-25 1999-03-08 Sgs Thomson Microelectronics Circuito e metodo di lettura di celle di una matrice di memoria analogica, in particolare di tipo flash
US5881008A (en) * 1997-09-12 1999-03-09 Artisan Components, Inc. Self adjusting pre-charge delay in memory circuits and methods for making the same
US5965925A (en) * 1997-10-22 1999-10-12 Artisan Components, Inc. Integrated circuit layout methods and layout structures
US5999482A (en) * 1997-10-24 1999-12-07 Artisan Components, Inc. High speed memory self-timing circuitry and methods for implementing the same
US6016390A (en) * 1998-01-29 2000-01-18 Artisan Components, Inc. Method and apparatus for eliminating bitline voltage offsets in memory devices
JPH11273388A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
FR2778012B1 (fr) * 1998-04-28 2001-09-28 Sgs Thomson Microelectronics Dispositif et procede de lecture de cellules de memoire eeprom
US6219290B1 (en) * 1998-10-14 2001-04-17 Macronix International Co., Ltd. Memory cell sense amplifier
EP1426965A1 (de) * 2002-12-04 2004-06-09 STMicroelectronics S.r.l. Leseschaltung für eine nichtflüchtige Speicherzelle insbesondere bei niedrigen Versorgungsspannungen und hoher Kapazitätsbelastung
US6839280B1 (en) * 2003-06-27 2005-01-04 Freescale Semiconductor, Inc. Variable gate bias for a reference transistor in a non-volatile memory
FR2857149B1 (fr) * 2003-07-01 2005-12-16 St Microelectronics Sa Procede de commande des amplificateurs de lecture d'une memoire et circuit integre de memoire correspondant
JP3935150B2 (ja) 2004-01-20 2007-06-20 株式会社東芝 磁気ランダムアクセスメモリ
JP4554613B2 (ja) * 2004-07-30 2010-09-29 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 半導体装置および半導体装置にデータを書き込む方法
US7158431B2 (en) 2005-03-28 2007-01-02 Silicon Storage Technology, Inc. Single transistor sensing and double transistor sensing for flash memory
US7573748B2 (en) * 2007-01-12 2009-08-11 Atmel Corporation Column leakage compensation in a sensing circuit
US7489574B2 (en) * 2007-06-15 2009-02-10 Ememory Technology Inc. Sensing circuit for memories
TWI334604B (en) * 2007-06-25 2010-12-11 Ind Tech Res Inst Sensing circuits of phase change memory
JP5331031B2 (ja) * 2010-02-25 2013-10-30 ラピスセミコンダクタ株式会社 電流検出回路
US9437257B2 (en) * 2012-12-31 2016-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Sensing circuit, memory device and data detecting method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1246754B (it) * 1990-12-28 1994-11-26 Sgs Thomson Microelectronics Circuito di lettura di celle eprom
JPH04321997A (ja) * 1991-04-19 1992-11-11 Nec Corp 半導体メモリ装置
JPH0574181A (ja) * 1991-09-10 1993-03-26 Nec Corp 半導体メモリ装置のデータ読み出し回路
US5390147A (en) * 1994-03-02 1995-02-14 Atmel Corporation Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory
US5396467A (en) * 1994-03-30 1995-03-07 United Microelectronics Corp. Sense amplifier
DE69425367T2 (de) * 1994-04-19 2001-02-15 Stmicroelectronics S.R.L., Agrate Brianza Leseschaltkreis für Speichermatrixzelle

Also Published As

Publication number Publication date
FR2734390A1 (fr) 1996-11-22
EP0743650B1 (de) 2001-07-25
JPH08321196A (ja) 1996-12-03
FR2734390B1 (fr) 1997-06-13
DE69614032T2 (de) 2001-11-15
EP0743650A1 (de) 1996-11-20
US5699295A (en) 1997-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee