US20010014038A1 - Write circuit for a semiconductor memory device - Google Patents
Write circuit for a semiconductor memory device Download PDFInfo
- Publication number
- US20010014038A1 US20010014038A1 US09/241,589 US24158999A US2001014038A1 US 20010014038 A1 US20010014038 A1 US 20010014038A1 US 24158999 A US24158999 A US 24158999A US 2001014038 A1 US2001014038 A1 US 2001014038A1
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- potential
- transistor
- write
- transistors
- power supply
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
Abstract
Description
- The present invention generally relates to a write circuit for a semiconductor memory device, and more particularly, to the stabilization of the write potential supplied to a memory cell transistor of a semiconductor memory device.
- An Electrically Erasable and Programmable ROM (EEPROM) is equipped with a memory cell transistor with a double gate structure consisting of a floating gate and a control gate. In data writing of the memory cell transistor, some hot electrons that move from a drain region to a source region are injected into the floating gate. In data reading, the differences between the operating characteristics of a memory cell when electric charge is injected into the floating gate and the operating characteristics of the memory cell when the electric charge is not injected into the floating gate are detected. In other words, changes in the threshold of the memory cell are detected.
- FIG. 1 is a schematic block diagram of a conventional semiconductor memory device. In this diagram, the memory device has four rows and one column. However, it is well known in the art that memory cell transistors can be arranged over plural rows and columns.
- A
memory cell transistor 1 has an electrically independent floating gate and a control gate having a portion that covers the floating gate. Thememory cell transistor 1 turns on and off in accordance with a potential applied to the control gate and changes its own threshold in accordance with the amount of electric charge accumulated in the floating gate. - The control gate of the
memory cell transistor 1 of each row is connected to aword line 2 provided on each row, respectively. The drain of thememory cell transistor 1 in one column is connected to a sense amp (not illustrated) via a common bit line 3. The source of eachmemory cell transistor 1 is connected to asource line 4 arranged between the respectivememory cell transistors 1. - A
row decoder 5 receives row address information and generates row selection signals LS1 to LS4 that selectively activate any one of the fourword lines 2 in accordance with a selection clock signal φL. The selection signals LS1 to LS4 are supplied to thememory cell transistors 1 through theword lines 2 and the control gate of the selectedmemory cell transistor 1 is turned on. If thememory cell transistors 1 are arranged over plural columns, a column decoder that selects one column is used in accordance with column address information. Thus, the onememory cell transistor 1 selected in accordance with the low address information (and the column address information) is connected to the sense amp. - A
read controller 6 is connected to the bit line 3 and supplies a read potential Vd1 to the bit line 3 in accordance with a read clock signal φR. A write controller 7 is connected to thesource line 4 and supplies a write potential Vd2 to thesource line 4 in accordance with a write clock signal φW. Theread controller 6 and the write controller 7 supply a ground potential Vs, except during the periods in which the read potential Vd1 and the write potential Vd2 are supplied. - In data writing, the ground potential Vs (for example, 0 V) is applied to the drain of the
memory cell transistor 1 through the bit line 3, and the write potential Vd2 (for example, 14 V) is applied to the source of thememory cell transistor 1 through thesource line 4. Accordingly, in the selectedmemory cell transistor 1, write current flows from the source region to the drain region and an electric charge is injected into the floating gate. - In data reading, the read potential Vd1 (for example, 5 V) is applied to the drain of the
memory cell transistor 1 through the bit line 3, and the ground potential Vs (for example, 0 V) is applied to the source of thememory cell transistor 1 through thesource line 4. Accordingly, in the selectedmemory cell transistor 1, read current flows from the drain region to the source region. At this time, thememory cell transistor 1 has a threshold that corresponds to the amount of electric charge (i.e., write information) accumulated in the floating gate. Consequently, the potential of the bit line 3 that corresponds to the threshold is read using the sense amp. - In data writing, as the amount of electric charge injected into the floating gate of the
memory cell transistor 1 increases, the threshold change of thememory cell transistor 1 increases. As a result, in data reading, the write data is more easily determined. However, increasing the amount of electric charge prolongs the write time. Accordingly, it is not desirable to inject more electric charge into the floating gate than is necessary. In general, the minimum amount of electric charge is injected into the floating gate such that a sufficient change of threshold to determine the write data can be obtained. - Because the write potential Vd2 is higher than the normal power supply potential, the high potential Vhv generated using a booster (not illustrated) is supplied to the write controller 7, and the write potential Vd2 is supplied to the
source line 4 by the write controller 7. Accordingly, the current flowing in thememory cell transistor 1 is determined according to the current supply capacity of the booster. Further, the amount of electric charge injected into the floating gate is controlled by the amount of current flowing in thememory cell transistor 1 and the current flow time. If the booster operates unstably due to factors such as fluctuations of the power supply potential, the current flowing in thememory cell transistor 1 fluctuates. Consequently, the amount of electric charge injected into the floating gate fluctuates. - It is an object of the present invention to provide a write circuit for a semiconductor memory device that stably writes data into a memory cell transistor.
- Briefly stated, the present invention provides a write circuit for supplying a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device. The device includes a reference potential generator that generates a reference potential having a substantially constant potential difference from one of a power supply potential and a ground potential. A voltage-controlled oscillator (VCO) connected to the reference potential generator receives the reference potential and generating an oscillation clock signal having an oscillation clock frequency in proportion to the reference potential. A booster connected to the VCO that generates a write potential by piling up the oscillation clock signal onto the power supply potential in a multistage manner. A write controller is connected to the booster and supplies the write potential to the memory cells in accordance with a write clock.
- The present invention provides a method of generating a write potential that is higher than a power supply potential to memory cells of a semiconductor memory device. First, a reference potential is generated that has a substantially constant potential difference from one of a power supply potential and a ground potential. Then, an oscillation clock signal having an oscillation clock frequency is generated in proportion to the reference potential. A write potential is generated by piling up the oscillation clock signal onto the power supply potential in a multistage manner. Then, the write potential is supplied to the memory cells in accordance with a write clock.
- Other aspects and advantages of the invention will become apparent from the following description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
- The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together the accompanying drawings in which:
- FIG. 1 is a schematic block diagram of a conventional nonvolatile semiconductor memory device.
- FIG. 2 is a schematic block diagram of a nonvolatile semiconductor memory device according to a first embodiment of the present invention.
- FIG. 3 is a circuit diagram of a write circuit for the memory device of FIG. 2.
- FIG. 4 is a schematic block diagram of a nonvolatile semiconductor memory device according to a second embodiment of the present invention.
- FIG. 5 is a circuit diagram of a write circuit of the memory device of FIG. 4.
- FIG. 6 is a schematic block diagram of a nonvolatile memory device according to a third embodiment of the present invention.
- FIG. 7 is a circuit diagram of the write circuit of the memory device of FIG. 6.
- In the drawings, like numerals are used for like elements throughout.
- (First Embodiment)
- FIG. 2 is a schematic block diagram of a nonvolatile
semiconductor memory device 100 according to a first embodiment of the present invention. The nonvolatilesemiconductor memory device 100 is equipped with thememory cell transistors 1, theword lines 2, the bit line 3, thesource lines 4, therow decoder 5, theread controller 6, the write controller 7, areference potential generator 21, a voltage-controlled oscillator (VCO) 22, and abooster 23. - The reference
potential generator 21 generates a reference potential Vrf and supplies the reference potential Vrf to the voltage-controlled oscillator (VCO) 22. The reference potential Vrf always has a constant potential difference from the ground potential or power supply potential. - The voltage-controlled oscillator (VCO)22 is preferably a ring oscillator having a negative feedback loop, and varies the frequency of an oscillation clock signal φc by fluctuating the delay time of the negative feedback loop in response to the reference potential Vrf.
- The
booster 23 generates the high potential Vhv that is higher than the power supply potential by laying or piling up the waveform of the oscillation clock signal φc from theVCO 22 onto the power supply potential in a multistage manner and supplies the high potential Vhv to the write controller 7. The write controller 7 supplies the high potential Vhv to thesource line 4 as the write potential Vd2 in accordance with the write clock signal φw. - Because the reference potential Vrf maintains a substantially constant potential difference from and the power supply potential or ground potential, the
VCO 22 generates the oscillation clock signal φc having a constant or substantially constant frequency. Thebooster 23 generates the high potential Vhv in accordance with the oscillation clock signal φc. In other words, the current supply capacity of thebooster 23 is determined according to the frequency of the oscillation clock signal φc. Accordingly, while the reference potential Vrf is maintained at the predetermined level, a substantially constant write current flows in thememory cell transistor 1. In other words, the operation of writing information to thememory cell transistor 1 is made stable by the write controller 7. - FIG. 3 is a circuit diagram illustrating the reference
potential generator 21, theVCO 22, and thebooster 23 of FIG. 2. - The reference
potential generator 21 is equipped with aresistor 31, an N-channeltype MOS transistor 32, a P-channeltype MOS transistor 33, and an N-channeltype MOS transistor 34. Theresistor 31 and thetransistor 32 are connected in series between the power supply potential and ground potential, and a node N1 between theresistor 31 and thetransistor 32 is connected to the gate of thetransistor 32. A pair oftransistors transistors transistor 33. Further, the gate of thetransistor 34 is connected to the node N1. Thetransistors resistor 31 and thetransistor 32. The potential between theresistor 31 and thetransistor 32 is output from the node N1 as the first reference potential Vrn, and the potential between thetransistors - The first reference potential Vrn is determined according to the resistance ratios of the
resistor 31 and thetransistor 32 and maintains a substantially constant potential difference from the first reference potential Vrn and the power supply potential. The second reference potential Vrp is determined according to the resistance ratios of thetransistors - The
VCO 22 is equipped withinverters 40 connected at odd stages and in series, and the output of thefinal stage inverter 40 is fed back to the input of thefirst stage inverter 40 to form a ring oscillator. Each of theinverters 40 includes two N-channeltype MOS transistors type MOS transistors transistors transistors transistors inverter 40, and the node between thetransistors inverter 40. The first reference potential Vrn is applied to the gate of each of thetransistors 41 and the second reference potential Vrp is applied to the gate of each of thetransistors 44. Accordingly, the delay time of theinverter 40 is controlled according to the potential difference between the first reference potential Vrn and ground potential and the potential difference between the second reference potential Vrp and the power supply potential. - Because the first reference potential Vrn and the second reference potential Vrp maintain a substantially constant potential difference from the ground potential and the power supply potential, respectively, the delay time of each
inverter 40 is maintained substantially constant. Thus, the oscillation clock signal φc having the substantially constant oscillation frequency controlled by the first and second reference potential Vm, Vrp is output from the input of thefirst stage inverter 40, and the inverse clock signal *φc is output from the node between the first andsecond inverters 40. - The
booster 23 is equipped with an N-channeltype MOS transistor 51, four series connected N-channeltype MOS transistors 52 a to 52 d, fourcapacitors 53 a to 53 d, adiode 54, and an N-channeltype MOS transistor 55. Thetransistor 51 has a drain and a gate connected to the power supply. The drain of thefirst stage transistor 52 a is connected to the source of thetransistor 51, and the source of thefourth stage transistor 52 d is connected to the output terminal of thebooster 23. - The first and
third stage capacitors third stage transistors fourth stage capacitors fourth stage transistors - The
diode 54 has an anode connected to the source of thefourth stage transistor 52 d and a cathode connected to the drain of thetransistor 55. Thetransistor 55 is connected between the cathode of thediode 54 and the ground potential, and its gate is connected to its drain. Thediode 54 and thetransistor 55 form a limiter that prevents the high potential Vhv from exceeding the predetermined potential. - A potential lower than the power supply potential by the threshold of the
transistor 51 is applied to the drain of thefirst stage transistor 52 a, and the electric charge is accumulated in thefirst stage capacitor 53 a. At this time, when the oscillation clock signal φc having a low level is applied, the first andthird stage transistors third stage transistors fourth stage transistors first stage capacitor 53 a moves to thesecond stage capacitor 53 b. At this time, because the oscillation clock signal φc has the high level, the electric charge that corresponds to the higher potential by the peak value of the oscillation clock signal φc is accumulated in thesecond stage capacitor 53 b. When the potential of thefirst stage capacitor 53 a is higher than the potential, which is lower than the power supply potential by the threshold of thetransistor 51, thetransistor 51 turns off and the supply of the power supply potential is stopped. - By repeating the reverse of the oscillation clock signal φc and inverse clock signal *φc, the electric charge sequentially moves from the
second stage capacitor 53 b to thefourth stage capacitor 53 d, and the peak value of the oscillation clock signal φc or inverse clock signal *φc is sequentially added. Then, the high potential Vhv that corresponds to the accumulated peak for the four stages is output from thebooster 23. Accordingly, the current supply capacity of thebooster 23 is determined according to the frequencies of the oscillation clock signal φc and the inverse clock signal *φc. - When the high potential Vhv exceeds the total voltage of the breakdown voltage of the
diode 54 and the threshold voltage of thetransistor 55, current flows into the ground through thediode 54 and thetransistor 55. Accordingly, the high potential Vhv is limited to the predetermined potential. - The write controller7 receives the high potential Vhv from the
booster 23 and applies the write potential Vd2 to the selectedmemory cell transistor 1. Thus, the constant write potential Vd2 is applied to the selectedmemory cell transistor 1 and the constant current flows to the selected memory cell. - (Second Embodiment)
- FIG. 4 is a schematic block diagram of a nonvolatile
semiconductor memory device 200 according to a second embodiment of the present invention. The nonvolatilesemiconductor memory device 200 is equipped with thememory cell transistors 1, theword lines 2, the bit line 3, thesource lines 4, therow decoder 5, theread controller 6, the write controller 7, theVCO 22, thebooster 23, alevel shift circuit 24, and a referencepotential generator 25. - The reference
potential generator 25 generates a reference potential Vrf having a substantially constant potential difference from the ground potential or power supply potential and supplies the reference voltage Vrf to the voltage-controlledoscillator 22. The referencepotential generator 25 changes or corrects the reference potential Vrf in accordance with an intermediate potential Vmv supplied from thelevel shift circuit 24 described below. - The
level shift circuit 24 receives the high potential Vhv from thebooster 23 and shifts the level of the high potential Vhv to a level that is lower than the power supply potential to generate the intermediate potential Vmv. In other words, thelevel shift circuit 24 generates the intermediate potential Vmv that follows the fluctuation of the high potential Vhv and supplies intermediate potential Vmn to the referencepotential generator 21. - The level of the high potential Vhv drops if the current supply capacity of the
booster 23 is insufficient. In other words, when the level of the high potential Vhv drops, the referencepotential generator 21 feeds back and controls theVCO 22 so that the frequency of the oscillation clock signal φc increases based on the intermediate potential Vmn. This feedback control maintains the level of the high potential Vhv substantially constant. - FIG. 5 is a circuit diagram of the
VCO 22, thebooster 23, thelevel shift circuit 24, and the referencepotential generator 25 of FIG. 4. - The reference
potential generator 25 is equipped with P-channeltype MOS transistors type MOS transistors transistors level shift circuit 24 is applied to the gate of thetransistor 73. The gate of thetransistor 71 is connected to a node N3 between thetransistors transistors transistor 72 is connected to the node N3. The gate of thetransistor 74 is connected to a node N4 between thetransistors - The
level shift circuit 24 is equipped with tworesistors type MOS transistor 63. Theresistors transistor 63 are connected in series between the power supply potential and ground potential, and the high potential Vhv from thebooster 23 is applied to the gate of thetransistor 63. The intermediate potential Vmv is output from a node N5 between theresistors transistor 63 has a high-dielectric strength structure. Accordingly, even if the high potential Vhv is applied to the gate, no current leakage is generated. The resistances of theresistors transistor 63. - In the
level shift circuit 24, when the level of the high potential Vhv drops, the intermediate potential Vmv rises. In the referencepotential generator 25, in accordance with the rise of the intermediate potential Vmv, the first reference potential Vrp drops and the second reference potential Vrn rises. Thus, the delay time of eachinverter 40 in theVCO 22 is decreased. Accordingly, the frequencies of the oscillation clock signal φc and inverse clock signal *φc increase and as a result, the current supply capacity of thebooster 23 improves. Thus, the level of the high potential Vhv generated by thebooster 23 is corrected. - (Third Embodiment)
- FIG. 6 is a schematic block diagram of a nonvolatile
semiconductor memory device 300 according to a third embodiment of the present invention. The nonvolatilesemiconductor memory device 300 is equipped with thememory cell transistors 1, theword lines 2, the bit line 3, thesource lines 4, therow decoder 5, theread controller 6, the write controller 7, the referencepotential generator 21, theVCO 22, thelevel shift circuit 24, and abooster 26. - The
booster 26 receives the intermediate potential Vmv from thelevel shift circuit 24 and sets the initial potential based on the intermediate potential. Thebooster 26 lays the peak value of the oscillation clock signal φc onto the initial potential and generates the high potential Vhv. In other words, when the level of the high potential Vhv drops and the intermediate potential Vmv rises, thebooster 26 is designed so that the initial potential rises and the level drop of the high potential Vhv is compensated. - FIG. 7 is a circuit diagram of the reference
potential generator 21,VCO 22,level shift circuit 24, andbooster 26 of FIG. 6. - The
booster 26 is provided with an N-channeltype MOS transistor 81, four N-channeltype MOS transistors 82 a to 82 d connected in series, fourcapacitors 83 a to 83 d, adiode 84, and an N-channeltype MOS transistor 85. The intermediate potential Vmv from thelevel shift circuit 24 is applied to the gate of thetransistor 81, and the drain of thetransistor 81 is connected to a power supply. - The drain of the
first stage transistor 82 a is connected to the source of thetransistor 81, and the source of thefourth stage transistor 82 d is connected to the output terminal of thebooster 26. The first andthird stage capacitors third stage transistors fourth stage capacitors fourth stage capacitors - The
diode 84 has an anode connected to the source of thefourth stage transistor 82 d and a cathode connected to the drain of thetransistor 85. Thetransistor 85 is connected between the cathode of thediode 84 and ground potential and its gate is connected to its drain. Thediode 84 and thetransistor 85 form a limiter that prevents the high potential Vhv from exceeding the predetermined potential. - In the
booster 26, first, a potential lower than the intermediate potential by the threshold of thetransistor 81 is applied to the drain of thefirst stage transistor 82 a, and the electric charge corresponding to the potential is accumulated in thefirst stage capacitor 83 a. Then, while the oscillation clock signal φc and inverse clock signal *φc are repeatedly reversed and applied to thecapacitors 83 a to 83 d, the electric charge sequentially moves from thefirst stage capacitor 83 a to thefourth stage capacitor 83 d. While the electric charge is moving, the peak value of the oscillation clock signal φc or inverse clock signal *φc is sequentially added and finally the high potential Vhv that corresponds to the accumulated peak value for the four stages is generated. - In the
level shift circuit 24, when the high potential Vhv drops, the intermediate potential Vmv rises. Accordingly, the intermediate potential Vmv supplied to thetransistor 81 of thebooster 26, i.e. the initial potential, rises. As a result, the high potential Vhv rises and the level drop of the high potential Vhv is compensated. - It should be apparent to those skilled in the art that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention. Therefore, the present examples and embodiments are to be considered as illustrative and not restrictive and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims.
Claims (11)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10-037348 | 1998-02-19 | ||
JP3734898 | 1998-02-19 | ||
JP4758898 | 1998-02-27 | ||
JP4758798 | 1998-02-27 | ||
JP10-047587 | 1998-02-27 | ||
JP10-047588 | 1998-02-27 | ||
JP23906298A JPH11312393A (en) | 1998-02-19 | 1998-08-25 | Writing circuit for semiconductor memory |
JP10-239062 | 1998-08-25 |
Publications (2)
Publication Number | Publication Date |
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US20010014038A1 true US20010014038A1 (en) | 2001-08-16 |
US6353559B2 US6353559B2 (en) | 2002-03-05 |
Family
ID=27460402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/241,589 Expired - Lifetime US6353559B2 (en) | 1998-02-19 | 1999-02-02 | Write circuit for a semiconductor memory device |
Country Status (6)
Country | Link |
---|---|
US (1) | US6353559B2 (en) |
EP (1) | EP0938094B1 (en) |
JP (1) | JPH11312393A (en) |
KR (1) | KR100373465B1 (en) |
DE (1) | DE69916915T2 (en) |
TW (1) | TW548897B (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020163830A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Molecular memory device |
US20020163828A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Memory device with a self-assembled polymer film and method of making the same |
US20020163831A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Molecular memory cell |
US20030173612A1 (en) * | 2001-08-13 | 2003-09-18 | Krieger Juri H. | Memory device with active and passive layers |
US6627944B2 (en) | 2001-05-07 | 2003-09-30 | Advanced Micro Devices, Inc. | Floating gate memory device using composite molecular material |
US20040026714A1 (en) * | 2001-08-13 | 2004-02-12 | Krieger Juri H. | Memory device with active passive layers |
US20040051096A1 (en) * | 2002-09-17 | 2004-03-18 | Kingsborough Richard P. | Organic thin film zener diodes |
US6806526B2 (en) | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6809955B2 (en) | 2001-05-07 | 2004-10-26 | Advanced Micro Devices, Inc. | Addressable and electrically reversible memory switch |
US6844608B2 (en) | 2001-05-07 | 2005-01-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
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US6768157B2 (en) | 2001-08-13 | 2004-07-27 | Advanced Micro Devices, Inc. | Memory device |
EP1434232B1 (en) | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
KR100433407B1 (en) * | 2002-02-06 | 2004-05-31 | 삼성광주전자 주식회사 | Upright-type vacuum cleaner |
JP4168637B2 (en) * | 2002-02-13 | 2008-10-22 | セイコーエプソン株式会社 | Nonvolatile semiconductor memory device |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
US7848158B2 (en) * | 2008-05-05 | 2010-12-07 | Micron Technologies, Inc. | Methods and apparatuses for programming flash memory using modulated pulses |
US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US8816659B2 (en) | 2010-08-06 | 2014-08-26 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
WO2011106055A1 (en) | 2010-02-23 | 2011-09-01 | Rambus Inc. | Coordinating memory operations using memory-device generated reference signals |
US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
US9264053B2 (en) | 2011-01-18 | 2016-02-16 | Peregrine Semiconductor Corporation | Variable frequency charge pump |
US9324383B2 (en) * | 2014-03-20 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source line voltage regulation scheme for leakage reduction |
KR20220148518A (en) * | 2021-04-29 | 2022-11-07 | 에스케이하이닉스 주식회사 | Monitoring circuit monitoring performance of transistors |
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JPH06152334A (en) * | 1992-11-06 | 1994-05-31 | Mitsubishi Electric Corp | Ring oscillator and constant voltage generating circuit |
KR960000837B1 (en) * | 1992-12-02 | 1996-01-13 | 삼성전자주식회사 | Semiconductor memory device |
JP2658916B2 (en) * | 1994-11-04 | 1997-09-30 | 日本電気株式会社 | Power supply switching circuit for semiconductor device |
US5615146A (en) * | 1994-11-11 | 1997-03-25 | Nkk Corporation | Nonvolatile memory with write data latch |
US5661686A (en) * | 1994-11-11 | 1997-08-26 | Nkk Corporation | Nonvolatile semiconductor memory |
JP2917914B2 (en) * | 1996-05-17 | 1999-07-12 | 日本電気株式会社 | Boost circuit |
US5991221A (en) * | 1998-01-30 | 1999-11-23 | Hitachi, Ltd. | Microcomputer and microprocessor having flash memory operable from single external power supply |
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1998
- 1998-08-25 JP JP23906298A patent/JPH11312393A/en active Pending
-
1999
- 1999-01-20 TW TW088100800A patent/TW548897B/en not_active IP Right Cessation
- 1999-01-22 DE DE69916915T patent/DE69916915T2/en not_active Expired - Fee Related
- 1999-01-22 EP EP99101209A patent/EP0938094B1/en not_active Expired - Lifetime
- 1999-02-02 US US09/241,589 patent/US6353559B2/en not_active Expired - Lifetime
- 1999-02-18 KR KR10-1999-0005448A patent/KR100373465B1/en not_active IP Right Cessation
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US6855977B2 (en) | 2001-05-07 | 2005-02-15 | Advanced Micro Devices, Inc. | Memory device with a self-assembled polymer film and method of making the same |
US6844608B2 (en) | 2001-05-07 | 2005-01-18 | Advanced Micro Devices, Inc. | Reversible field-programmable electric interconnects |
US6809955B2 (en) | 2001-05-07 | 2004-10-26 | Advanced Micro Devices, Inc. | Addressable and electrically reversible memory switch |
US20050111271A1 (en) * | 2001-05-07 | 2005-05-26 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6627944B2 (en) | 2001-05-07 | 2003-09-30 | Advanced Micro Devices, Inc. | Floating gate memory device using composite molecular material |
US20020163828A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Memory device with a self-assembled polymer film and method of making the same |
US6873540B2 (en) | 2001-05-07 | 2005-03-29 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6781868B2 (en) | 2001-05-07 | 2004-08-24 | Advanced Micro Devices, Inc. | Molecular memory device |
US7113420B2 (en) | 2001-05-07 | 2006-09-26 | Advanced Micro Devices, Inc. | Molecular memory cell |
US20020163831A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Molecular memory cell |
US20020163830A1 (en) * | 2001-05-07 | 2002-11-07 | Coatue Corporation | Molecular memory device |
US20040026714A1 (en) * | 2001-08-13 | 2004-02-12 | Krieger Juri H. | Memory device with active passive layers |
US20030173612A1 (en) * | 2001-08-13 | 2003-09-18 | Krieger Juri H. | Memory device with active and passive layers |
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Also Published As
Publication number | Publication date |
---|---|
TW548897B (en) | 2003-08-21 |
JPH11312393A (en) | 1999-11-09 |
KR100373465B1 (en) | 2003-02-25 |
US6353559B2 (en) | 2002-03-05 |
DE69916915T2 (en) | 2005-04-28 |
DE69916915D1 (en) | 2004-06-09 |
KR19990072742A (en) | 1999-09-27 |
EP0938094A1 (en) | 1999-08-25 |
EP0938094B1 (en) | 2004-05-06 |
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