KR960008843A - 레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법 - Google Patents

레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법 Download PDF

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Publication number
KR960008843A
KR960008843A KR1019950026528A KR19950026528A KR960008843A KR 960008843 A KR960008843 A KR 960008843A KR 1019950026528 A KR1019950026528 A KR 1019950026528A KR 19950026528 A KR19950026528 A KR 19950026528A KR 960008843 A KR960008843 A KR 960008843A
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KR
South Korea
Prior art keywords
drap
rammer
data storage
effect
memory cells
Prior art date
Application number
KR1019950026528A
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English (en)
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KR100218133B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960008843A publication Critical patent/KR960008843A/ko
Application granted granted Critical
Publication of KR100218133B1 publication Critical patent/KR100218133B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019950026528A 1994-08-26 1995-08-25 레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법 KR100218133B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/296,835 1994-08-26
US08/296,835 US5729488A (en) 1994-08-26 1994-08-26 Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect

Publications (2)

Publication Number Publication Date
KR960008843A true KR960008843A (ko) 1996-03-22
KR100218133B1 KR100218133B1 (ko) 1999-09-01

Family

ID=23143779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950026528A KR100218133B1 (ko) 1994-08-26 1995-08-25 레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법

Country Status (5)

Country Link
US (1) US5729488A (ko)
JP (1) JP3040700B2 (ko)
KR (1) KR100218133B1 (ko)
GB (1) GB2292852B (ko)
TW (1) TW283235B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514918B (en) * 2000-11-17 2002-12-21 Macronix Int Co Ltd Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory
NO316580B1 (no) * 2000-11-27 2004-02-23 Thin Film Electronics Asa Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
US6842357B2 (en) * 2002-04-23 2005-01-11 Intel Corporation Nondestructive sensing mechanism for polarized materials
US20040061990A1 (en) 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
US6803794B2 (en) 2003-02-26 2004-10-12 Raytheon Company Differential capacitance sense amplifier
US7102908B2 (en) 2003-08-29 2006-09-05 Infineon Technologies Ag Reliable ferro fuse cell
US7821808B2 (en) * 2009-01-30 2010-10-26 Seagate Technology Llc Multilayer ferroelectric data storage system with regenerative read
DE102011012738B3 (de) * 2011-02-24 2012-02-02 Forschungszentrum Jülich GmbH Verfahren zum nichtdestruktiven Auslesen resistiver Speicherelemente und Speicherelement

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL179593B (nl) * 1953-07-03 Ciba Geigy Werkwijze voor het omhullen van pigmentdeeltjes.
NL190978A (ko) * 1953-10-01
US3132326A (en) * 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US3401377A (en) * 1967-05-23 1968-09-10 Bliss E W Co Ceramic memory having a piezoelectric drive member
GB1283607A (en) * 1969-05-23 1972-08-02 Plessey Co Ltd Improvements in and relating to optical switching arrangements
US4791611A (en) * 1985-09-11 1988-12-13 University Of Waterloo VLSI dynamic memory
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4980734A (en) * 1988-05-31 1990-12-25 Texas Instruments Incorporated Dynamic memory cell using silicon-on-insulator transistor with trench capacitor
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
US5309390A (en) * 1990-12-19 1994-05-03 The Charles Stark Draper Laboratory, Inc. Ferroelectric space charge capacitor memory
US5151877A (en) * 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5218566A (en) * 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
US5375085A (en) * 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
JP3222243B2 (ja) * 1993-01-25 2001-10-22 株式会社日立製作所 半導体記憶装置とそれを用いた情報処理システム
US5432731A (en) * 1993-03-08 1995-07-11 Motorola, Inc. Ferroelectric memory cell and method of sensing and writing the polarization state thereof
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory

Also Published As

Publication number Publication date
GB2292852A (en) 1996-03-06
JPH08212788A (ja) 1996-08-20
KR100218133B1 (ko) 1999-09-01
GB2292852B (en) 1998-08-05
GB9516273D0 (en) 1995-10-11
JP3040700B2 (ja) 2000-05-15
TW283235B (ko) 1996-08-11
US5729488A (en) 1998-03-17

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