DE69326329T2 - Speicherzellen-Stromleseverfahren in Mikrosteuergerät - Google Patents
Speicherzellen-Stromleseverfahren in MikrosteuergerätInfo
- Publication number
- DE69326329T2 DE69326329T2 DE69326329T DE69326329T DE69326329T2 DE 69326329 T2 DE69326329 T2 DE 69326329T2 DE 69326329 T DE69326329 T DE 69326329T DE 69326329 T DE69326329 T DE 69326329T DE 69326329 T2 DE69326329 T2 DE 69326329T2
- Authority
- DE
- Germany
- Prior art keywords
- microcontroller
- memory cell
- reading method
- cell current
- current reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP93830278A EP0632464B1 (de) | 1993-06-28 | 1993-06-28 | Speicherzellen-Stromleseverfahren in Mikrosteuergerät |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69326329D1 DE69326329D1 (de) | 1999-10-14 |
| DE69326329T2 true DE69326329T2 (de) | 2000-04-13 |
Family
ID=8215190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69326329T Expired - Fee Related DE69326329T2 (de) | 1993-06-28 | 1993-06-28 | Speicherzellen-Stromleseverfahren in Mikrosteuergerät |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5491662A (de) |
| EP (1) | EP0632464B1 (de) |
| JP (1) | JP3542637B2 (de) |
| DE (1) | DE69326329T2 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2713008B1 (fr) * | 1993-11-23 | 1995-12-22 | Sgs Thomson Microelectronics | Mémoire non volatile modifiable électriquement avec contrôle d'écriture. |
| JP3469316B2 (ja) * | 1994-07-01 | 2003-11-25 | 株式会社ルネサスＬｓｉデザイン | Ｉｃカード用マイクロコンピュータ |
| EP0791930B1 (de) * | 1995-10-02 | 2004-02-18 | Matsushita Electric Industrial Co., Ltd. | Elektrische Signalversorgungsschaltung und Halbleiterspeicheranordnung |
| US5890199A (en) * | 1996-10-21 | 1999-03-30 | Ramtron International Corporation | Data processor incorporating a ferroelectric memory array selectably configurable as read/write and read only memory |
| JPH10241400A (ja) * | 1997-02-26 | 1998-09-11 | Toshiba Corp | 半導体記憶装置 |
| US7830165B2 (en) * | 2006-03-31 | 2010-11-09 | Integrated Device Technology, Inc. | System and method for detecting single event latchup in integrated circuits |
| US7742340B2 (en) * | 2008-03-14 | 2010-06-22 | Freescale Semiconductor, Inc. | Read reference technique with current degradation protection |
| KR101105434B1 (ko) * | 2009-03-02 | 2012-01-17 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 전류 감지 특성 평가 장치 및 방법 |
| US11823739B2 (en) | 2020-04-06 | 2023-11-21 | Crossbar, Inc. | Physically unclonable function (PUF) generation involving high side programming of bits |
| CN115273934A (zh) | 2020-04-06 | 2022-11-01 | 昕原半导体(上海)有限公司 | 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2623653B1 (fr) * | 1987-11-24 | 1992-10-23 | Sgs Thomson Microelectronics | Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant |
| US5181205A (en) * | 1990-04-10 | 1993-01-19 | National Semiconductor Corporation | Short circuit detector circuit for memory arrays |
| FR2663774B1 (fr) * | 1990-06-21 | 1992-09-25 | Sgs Thomson Microelectronics | Circuit de test de cellules memoires electriquement programmables. |
| FR2665792B1 (fr) * | 1990-08-08 | 1993-06-11 | Sgs Thomson Microelectronics | Memoire integree pourvue de moyens de test ameliores. |
| JP2647546B2 (ja) * | 1990-10-11 | 1997-08-27 | シャープ株式会社 | 半導体記憶装置のテスト方法 |
-
1993
- 1993-06-28 EP EP93830278A patent/EP0632464B1/de not_active Expired - Lifetime
- 1993-06-28 DE DE69326329T patent/DE69326329T2/de not_active Expired - Fee Related
-
1994
- 1994-06-21 JP JP13909794A patent/JP3542637B2/ja not_active Expired - Fee Related
- 1994-06-27 US US08/266,939 patent/US5491662A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3542637B2 (ja) | 2004-07-14 |
| EP0632464B1 (de) | 1999-09-08 |
| JPH07141320A (ja) | 1995-06-02 |
| EP0632464A1 (de) | 1995-01-04 |
| DE69326329D1 (de) | 1999-10-14 |
| US5491662A (en) | 1996-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |