DE4442067B8 - Programmierbare Permanentspeicherzelle - Google Patents

Programmierbare Permanentspeicherzelle Download PDF

Info

Publication number
DE4442067B8
DE4442067B8 DE4442067A DE4442067A DE4442067B8 DE 4442067 B8 DE4442067 B8 DE 4442067B8 DE 4442067 A DE4442067 A DE 4442067A DE 4442067 A DE4442067 A DE 4442067A DE 4442067 B8 DE4442067 B8 DE 4442067B8
Authority
DE
Germany
Prior art keywords
memory cell
permanent memory
programmable permanent
programmable
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4442067A
Other languages
English (en)
Other versions
DE4442067A1 (de
DE4442067B4 (de
Inventor
Makio Ichinomiya Iida
Tetsuo Toyohashi Fujii
Yoshihiko Toyoake Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE4442067A1 publication Critical patent/DE4442067A1/de
Application granted granted Critical
Publication of DE4442067B4 publication Critical patent/DE4442067B4/de
Publication of DE4442067B8 publication Critical patent/DE4442067B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE4442067A 1993-11-25 1994-11-25 Programmierbare Permanentspeicherzelle Expired - Fee Related DE4442067B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPP5-295475 1993-11-25
JP29547593A JP3344598B2 (ja) 1993-11-25 1993-11-25 半導体不揮発メモリ装置

Publications (3)

Publication Number Publication Date
DE4442067A1 DE4442067A1 (de) 1995-06-01
DE4442067B4 DE4442067B4 (de) 2008-01-10
DE4442067B8 true DE4442067B8 (de) 2008-04-17

Family

ID=17821086

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4442067A Expired - Fee Related DE4442067B8 (de) 1993-11-25 1994-11-25 Programmierbare Permanentspeicherzelle

Country Status (3)

Country Link
US (1) US5747846A (de)
JP (1) JP3344598B2 (de)
DE (1) DE4442067B8 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877054A (en) * 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
EP0752721B1 (de) 1995-06-29 2009-04-29 Sharp Kabushiki Kaisha Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung
US7602007B2 (en) 1997-04-28 2009-10-13 Yoshihiro Kumazaki Semiconductor device having controllable transistor threshold voltage
JP4659662B2 (ja) * 1997-04-28 2011-03-30 ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
JPH1187664A (ja) 1997-04-28 1999-03-30 Nippon Steel Corp 半導体装置及びその製造方法
JP4032454B2 (ja) * 1997-06-27 2008-01-16 ソニー株式会社 三次元回路素子の製造方法
US5929478A (en) * 1997-07-02 1999-07-27 Motorola, Inc. Single level gate nonvolatile memory device and method for accessing the same
US6180492B1 (en) * 1999-01-25 2001-01-30 United Microelectronics Corp. Method of forming a liner for shallow trench isolation
US6627954B1 (en) * 1999-03-19 2003-09-30 Silicon Wave, Inc. Integrated circuit capacitor in a silicon-on-insulator integrated circuit
AU7594600A (en) * 1999-09-23 2001-04-24 Cp Clare Corporation Integrated high voltage capacitive coupling circuit using bonded and trenched isolated wafer technology
KR100358068B1 (ko) * 1999-12-28 2002-10-25 주식회사 하이닉스반도체 플래쉬 메모리 소자의 제조방법
JP2001339071A (ja) * 2000-03-22 2001-12-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
JP4281331B2 (ja) 2002-01-21 2009-06-17 株式会社デンソー 不揮発性半導体記憶装置
JP4262933B2 (ja) * 2002-05-30 2009-05-13 Ｎｅｃエレクトロニクス株式会社 高周波回路素子
US7052959B2 (en) * 2004-01-08 2006-05-30 Semiconductor Components Industries, Llc Method of forming an EPROM cell and structure therefor
JP4908901B2 (ja) * 2006-04-11 2012-04-04 ラピスセミコンダクタ株式会社 不揮発性メモリの製造方法
JP2007287795A (ja) * 2006-04-13 2007-11-01 Renesas Technology Corp 不揮発性半導体記憶装置
US20080108212A1 (en) * 2006-10-19 2008-05-08 Atmel Corporation High voltage vertically oriented eeprom device
JP5068057B2 (ja) 2006-10-19 2012-11-07 三菱電機株式会社 半導体装置
US7863709B1 (en) * 2007-04-16 2011-01-04 Marvell International Ltd. Low base resistance bipolar junction transistor array
US20100006912A1 (en) * 2008-07-14 2010-01-14 Honeywell International Inc. Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
US20100200918A1 (en) * 2009-02-10 2010-08-12 Honeywell International Inc. Heavy Ion Upset Hardened Floating Body SRAM Cells
JP7242285B2 (ja) * 2018-12-19 2023-03-20 キオクシア株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019197A (en) * 1975-01-17 1977-04-19 U.S. Philips Corporation Semiconductor floating gate storage device with lateral electrode system
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
US4924278A (en) * 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
JPH04212471A (ja) * 1990-07-12 1992-08-04 Hitachi Ltd 半導体集積回路装置
US5223731A (en) * 1988-06-30 1993-06-29 Goldstar Electron Co., Ltd. EPROM cell using trench isolation to provide leak current immunity
US5307312A (en) * 1990-07-24 1994-04-26 Sgs-Thomson Microelectronics S.R.L. Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223731A (en) * 1978-11-24 1980-09-23 Texaco Inc. Method for enhanced recovery of petroleum
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JP2788269B2 (ja) * 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
JPH0297056A (ja) * 1988-10-03 1990-04-09 Ricoh Co Ltd 半導体装置
US5078498A (en) * 1990-06-29 1992-01-07 Texas Instruments Incorporated Two-transistor programmable memory cell with a vertical floating gate transistor
US5086325A (en) * 1990-11-21 1992-02-04 Atmel Corporation Narrow width EEPROM with single diffusion electrode formation
US5355330A (en) * 1991-08-29 1994-10-11 Hitachi, Ltd. Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode
JPH05211307A (ja) * 1991-12-12 1993-08-20 Tdk Corp 不揮発性メモリセル

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4019197A (en) * 1975-01-17 1977-04-19 U.S. Philips Corporation Semiconductor floating gate storage device with lateral electrode system
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
US4924278A (en) * 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
US5223731A (en) * 1988-06-30 1993-06-29 Goldstar Electron Co., Ltd. EPROM cell using trench isolation to provide leak current immunity
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
JPH04212471A (ja) * 1990-07-12 1992-08-04 Hitachi Ltd 半導体集積回路装置
US5457335A (en) * 1990-07-12 1995-10-10 Hitachi, Ltd. Floating gate FET with hydrogen barrier shield
US5307312A (en) * 1990-07-24 1994-04-26 Sgs-Thomson Microelectronics S.R.L. Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process

Also Published As

Publication number Publication date
US5747846A (en) 1998-05-05
JPH07147340A (ja) 1995-06-06
DE4442067A1 (de) 1995-06-01
JP3344598B2 (ja) 2002-11-11
DE4442067B4 (de) 2008-01-10

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: DENSO CORP., KARIYA, AICHI, JP

8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAISER,

8396 Reprint of erroneous front page
8364 No opposition during term of opposition
R084 Declaration of willingness to licence
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140603