DE69434679D1 - Elektrisch programmierbare Festwertspeicheranordnung - Google Patents

Elektrisch programmierbare Festwertspeicheranordnung

Info

Publication number
DE69434679D1
DE69434679D1 DE69434679T DE69434679T DE69434679D1 DE 69434679 D1 DE69434679 D1 DE 69434679D1 DE 69434679 T DE69434679 T DE 69434679T DE 69434679 T DE69434679 T DE 69434679T DE 69434679 D1 DE69434679 D1 DE 69434679D1
Authority
DE
Germany
Prior art keywords
programmable read
electrically programmable
memory arrangement
memory
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69434679T
Other languages
English (en)
Inventor
Alex Shubat
Boaz Eitan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics lnc USA filed Critical STMicroelectronics lnc USA
Application granted granted Critical
Publication of DE69434679D1 publication Critical patent/DE69434679D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE69434679T 1993-12-20 1994-12-12 Elektrisch programmierbare Festwertspeicheranordnung Expired - Lifetime DE69434679D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/170,130 US5432730A (en) 1993-12-20 1993-12-20 Electrically programmable read only memory array

Publications (1)

Publication Number Publication Date
DE69434679D1 true DE69434679D1 (de) 2006-05-18

Family

ID=22618659

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69434679T Expired - Lifetime DE69434679D1 (de) 1993-12-20 1994-12-12 Elektrisch programmierbare Festwertspeicheranordnung

Country Status (3)

Country Link
US (1) US5432730A (de)
EP (1) EP0660413B1 (de)
DE (1) DE69434679D1 (de)

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US5557567A (en) * 1995-04-06 1996-09-17 National Semiconductor Corp. Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data
KR0183725B1 (ko) * 1995-07-28 1999-04-15 김광호 수율개선을 위하여 배치된 워드라인을 갖는 반도체 기억장치
JP3235715B2 (ja) * 1996-06-11 2001-12-04 シャープ株式会社 半導体記憶装置
US5883826A (en) * 1996-09-30 1999-03-16 Wendell; Dennis Lee Memory block select using multiple word lines to address a single memory cell row
US5777922A (en) * 1996-10-18 1998-07-07 Hyudai Electronics Industries Co., Ltd. Flash memory device
EP0851426A3 (de) * 1996-12-27 1999-11-24 STMicroelectronics S.r.l. Speicherblock zur Realisierung von Halbleiterspeicheranordnungen und entsprechendes Herstellungsverfahren
JP4004103B2 (ja) * 1997-07-01 2007-11-07 日本テキサス・インスツルメンツ株式会社 マスクｒｏｍ
US6185121B1 (en) * 1998-02-26 2001-02-06 Lucent Technologies Inc. Access structure for high density read only memory
TW412861B (en) * 1998-02-27 2000-11-21 Sanyo Electric Co Non-volatile semiconductor memory
US6359305B1 (en) 1999-12-22 2002-03-19 Turbo Ic, Inc. Trench-isolated EEPROM flash in segmented bit line page architecture
CN1321460C (zh) * 2001-10-18 2007-06-13 旺宏电子股份有限公司 具有平坦式区块选择晶体管的非挥发性存储器阵列结构
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
WO2007128738A1 (en) 2006-05-02 2007-11-15 Innovative Silicon Sa Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
WO2009031052A2 (en) 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8098525B2 (en) * 2007-09-17 2012-01-17 Spansion Israel Ltd Pre-charge sensing scheme for non-volatile memory (NVM)
WO2009039169A1 (en) 2007-09-17 2009-03-26 Innovative Silicon S.A. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) * 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8710566B2 (en) * 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
WO2010114890A1 (en) 2009-03-31 2010-10-07 Innovative Silicon Isi Sa Techniques for providing a semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
CN102812552B (zh) 2010-03-15 2015-11-25 美光科技公司 半导体存储器装置及用于对半导体存储器装置进行偏置的方法
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

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US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
US5151375A (en) * 1990-06-13 1992-09-29 Waferscale Integration, Inc. EPROM virtual ground array
JP3104319B2 (ja) * 1991-08-29 2000-10-30 ソニー株式会社 不揮発性記憶装置

Also Published As

Publication number Publication date
EP0660413A2 (de) 1995-06-28
EP0660413B1 (de) 2006-03-29
EP0660413A3 (de) 1995-09-13
US5432730A (en) 1995-07-11

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Legal Events

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