DE69524667D1 - Speicheranordnung - Google Patents

Speicheranordnung

Info

Publication number
DE69524667D1
DE69524667D1 DE69524667T DE69524667T DE69524667D1 DE 69524667 D1 DE69524667 D1 DE 69524667D1 DE 69524667 T DE69524667 T DE 69524667T DE 69524667 T DE69524667 T DE 69524667T DE 69524667 D1 DE69524667 D1 DE 69524667D1
Authority
DE
Germany
Prior art keywords
memory array
array
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524667T
Other languages
English (en)
Other versions
DE69524667T2 (de
Inventor
Tohru Kouhei
Hideyuki Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Storage Device Corp
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69524667D1 publication Critical patent/DE69524667D1/de
Publication of DE69524667T2 publication Critical patent/DE69524667T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE69524667T 1994-05-27 1995-03-31 Speicheranordnung Expired - Fee Related DE69524667T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6115564A JP2774243B2 (ja) 1994-05-27 1994-05-27 記憶装置

Publications (2)

Publication Number Publication Date
DE69524667D1 true DE69524667D1 (de) 2002-01-31
DE69524667T2 DE69524667T2 (de) 2002-06-13

Family

ID=14665676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524667T Expired - Fee Related DE69524667T2 (de) 1994-05-27 1995-03-31 Speicheranordnung

Country Status (4)

Country Link
EP (1) EP0685849B1 (de)
JP (1) JP2774243B2 (de)
KR (1) KR0166414B1 (de)
DE (1) DE69524667T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW411471B (en) 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
US6538917B1 (en) * 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
US7068531B2 (en) * 2004-01-10 2006-06-27 Honeywell International Inc. Bias-adjusted magnetoresistive devices for magnetic random access memory (MRAM) applications

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830770B2 (ja) * 1974-10-11 1983-07-01 松下電器産業株式会社 エンカクセイギヨソウチツキテレビジヨンジユゾウキノ デンゲンセイギヨヨウシ−ケンシヤルプログラムタイマ−
JPH01199390A (ja) * 1988-02-03 1989-08-10 Fuji Elelctrochem Co Ltd 記憶装置
JPH0636442B2 (ja) * 1988-02-03 1994-05-11 富士電気化学株式会社 記憶装置
JPH02143980A (ja) * 1988-11-24 1990-06-01 Hisao Funahara 記憶マトリックス
JP2845952B2 (ja) * 1989-06-28 1999-01-13 株式会社日立製作所 薄膜磁気メモリセルとその記録および再生装置
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory

Also Published As

Publication number Publication date
KR950034873A (ko) 1995-12-28
KR0166414B1 (ko) 1999-01-15
JPH07326184A (ja) 1995-12-12
EP0685849A2 (de) 1995-12-06
DE69524667T2 (de) 2002-06-13
EP0685849A3 (de) 1998-10-28
JP2774243B2 (ja) 1998-07-09
EP0685849B1 (de) 2001-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOSHIBA STORAGE DEVICE CORP., TOKYO, JP

8339 Ceased/non-payment of the annual fee