JP5068057B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5068057B2 JP5068057B2 JP2006285170A JP2006285170A JP5068057B2 JP 5068057 B2 JP5068057 B2 JP 5068057B2 JP 2006285170 A JP2006285170 A JP 2006285170A JP 2006285170 A JP2006285170 A JP 2006285170A JP 5068057 B2 JP5068057 B2 JP 5068057B2
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- 239000004065 semiconductor Substances 0.000 title claims description 342
- 238000009792 diffusion process Methods 0.000 description 132
- 230000000694 effects Effects 0.000 description 19
- 230000003071 parasitic effect Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1から図5を参照して、実施の形態1における半導体装置について説明する。本実施の形態における半導体装置は、npn型のバイポーラトランジスタである。本実施の形態においては、第1導電型がp型であり、第2導電型がn型である。
図6を参照して、実施の形態2における半導体装置について説明する。本実施の形態における半導体装置は、第4半導体領域の底部に埋め込み領域が形成されていない点で実施の形態1の半導体装置と異なる。
図7および図8を参照して、実施の形態3における半導体装置について説明する。本実施の形態における半導体装置は、フローティング電極の構成が実施の形態1の半導体装置と異なる。
図9を参照して、実施の形態4における半導体装置について説明する。本実施の形態における半導体装置は、埋め込み領域が排除されている点で実施の形態1の半導体装置と異なる。
図10から図13を参照して、実施の形態5における半導体装置について説明する。本実施の形態における半導体装置は、ダミー島である第4半導体領域の構成が実施の形態1の半導体装置と異なる。
図14および図15を参照して、実施の形態6における半導体装置について説明する。本実施の形態における半導体装置は、第5半導体領域の構成が実施の形態1の半導体装置と異なる。
図16を参照して、実施の形態7における半導体装置について説明する。
Claims (8)
- 平面的に延びるように形成された第1導電型の第1半導体領域と、
前記第1半導体領域の上側に配置された第2導電型の第2半導体領域と、
前記第1半導体領域の上側に配置され、前記第2半導体領域から離れて形成された第2導電型の第3半導体領域と、
前記第1半導体領域の上側に配置され、前記第2半導体領域と前記第3半導体領域との間に、前記第2半導体領域と前記第3半導体領域とから離れて形成された第2導電型の第4半導体領域と、
前記第1半導体領域の上側に配置され、前記第3半導体領域と前記第4半導体領域との間に配置され、第1半導体領域よりも低抵抗の第1導電型の第5半導体領域と、
前記第2半導体領域に接するように形成された第1電極と、
前記第3半導体領域に接するように形成された第2電極と、
前記第2半導体領域と前記第4半導体領域とに挟まれる領域に形成された第3電極と
を備え、
前記第4半導体領域と前記第5半導体領域が導電性部材で電気的に接続され、
前記第4半導体領域の幅よりも前記第4半導体領域と前記第3半導体領域との距離が長くなるように形成され、
前記第1半導体領域は、前記第2半導体領域、前記第3半導体領域、前記第4半導体領域および前記第5半導体領域のそれぞれに接し、
前記第5半導体領域は、前記第4半導体領域および前記第3半導体領域のそれぞれに接触する態様で配置されているか、または、前記第4半導体領域および前記第3半導体領域のそれぞれとの間に前記第1半導体領域を介在させる態様で配置されている、半導体装置。 - 前記第5半導体領域の表面に配置され、前記導電性部材に接続されている第4電極を備え、
前記第4電極は、前記第5半導体領域の表面のほぼ全体に接触するように形成されている、請求項1に記載の半導体装置。 - 前記第4半導体領域は、前記第2半導体領域から前記第3半導体領域に向かう方向に垂直な方向において、複数個が離散的に形成されている、請求項1に記載の半導体装置。
- 前記第2半導体領域と前記第3半導体領域との間に溝部が形成され、
前記第4半導体領域は、前記溝部の壁面に沿うように形成されている、請求項1から3のいずれかに記載の半導体装置。 - 前記第2半導体領域と前記第3半導体領域との間に溝部が形成され、
前記第5半導体領域は、前記溝部の壁面に沿うように形成されている、請求項1から3のいずれかに記載の半導体装置。 - 前記第2半導体領域の底部に接するように形成され、前記第2半導体領域よりも低抵抗である第2導電型の第1埋め込み領域と、
前記第3半導体領域の底部に接するように形成され、前記第3半導体領域よりも低抵抗である第2導電型の第2埋め込み領域と
を備える、請求項1から5のいずれかに記載の半導体装置。 - 前記第4半導体領域は、前記第2半導体領域および前記第3半導体領域よりも浅くなるように形成されている、請求項1から6のいずれかに記載の半導体装置。
- 前記第2半導体領域と前記第4半導体領域とに挟まれる領域に配置され、前記第1半導体領域に接するように形成された第1導電型の第6半導体領域を備え、
前記第3電極は、前記第6半導体領域に接するように形成された、請求項1から7のいずれかに記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006285170A JP5068057B2 (ja) | 2006-10-19 | 2006-10-19 | 半導体装置 |
US11/738,039 US7755168B2 (en) | 2006-10-19 | 2007-04-20 | Semiconductor device provided with floating electrode |
TW096114247A TWI337776B (en) | 2006-10-19 | 2007-04-23 | Semiconductor device provided with floating electrode |
DE102007034349A DE102007034349B4 (de) | 2006-10-19 | 2007-07-24 | Halbleitervorrichtung, welche mit einer schwebenden Elektrode versehen ist |
KR1020070077322A KR100878289B1 (ko) | 2006-10-19 | 2007-08-01 | 플로팅 전극을 구비한 반도체 장치 |
CN2007101399273A CN101165915B (zh) | 2006-10-19 | 2007-08-03 | 具有浮动电极的半导体装置 |
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JP2006285170A JP5068057B2 (ja) | 2006-10-19 | 2006-10-19 | 半導体装置 |
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JP2008103551A JP2008103551A (ja) | 2008-05-01 |
JP5068057B2 true JP5068057B2 (ja) | 2012-11-07 |
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US (1) | US7755168B2 (ja) |
JP (1) | JP5068057B2 (ja) |
KR (1) | KR100878289B1 (ja) |
CN (1) | CN101165915B (ja) |
DE (1) | DE102007034349B4 (ja) |
TW (1) | TWI337776B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5191132B2 (ja) * | 2007-01-29 | 2013-04-24 | 三菱電機株式会社 | 半導体装置 |
US8581339B2 (en) * | 2011-08-08 | 2013-11-12 | Macronix International Co., Ltd. | Structure of NPN-BJT for improving punch through between collector and emitter |
KR101259896B1 (ko) | 2011-08-29 | 2013-05-02 | 주식회사 동부하이텍 | 바이폴라 트랜지스터 및 그 제조 방법 |
JP5821924B2 (ja) * | 2013-10-21 | 2015-11-24 | トヨタ自動車株式会社 | バイポーラトランジスタ |
JP5821925B2 (ja) * | 2013-10-21 | 2015-11-24 | トヨタ自動車株式会社 | バイポーラトランジスタ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5698839A (en) | 1980-01-10 | 1981-08-08 | Rohm Co Ltd | Integrated circuit for dc load |
JPS5877254A (ja) | 1981-11-02 | 1983-05-10 | Oki Electric Ind Co Ltd | 論理集積回路装置 |
JPS5994861A (ja) | 1982-11-24 | 1984-05-31 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
JP2611450B2 (ja) | 1989-08-30 | 1997-05-21 | 日本電気株式会社 | 半導体集積回路及びその製造方法 |
DE4130626C2 (de) * | 1991-09-14 | 1995-03-23 | Telefunken Microelectron | Integrierte Halbleiteranordnung mit mehreren isolierten Gebieten |
JP3344598B2 (ja) | 1993-11-25 | 2002-11-11 | 株式会社デンソー | 半導体不揮発メモリ装置 |
JPH07211510A (ja) * | 1994-01-27 | 1995-08-11 | Nippondenso Co Ltd | 半導体装置 |
JPH09293729A (ja) | 1996-04-27 | 1997-11-11 | Denso Corp | 半導体装置およびその製造方法 |
JPH11330431A (ja) | 1998-05-18 | 1999-11-30 | Nec Corp | 不揮発性半導体記憶装置の製造方法 |
JP2004158889A (ja) | 2004-02-20 | 2004-06-03 | Fujitsu Ltd | 半導体記憶装置及びその情報消去方法 |
JP2006270027A (ja) * | 2005-02-24 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 半導体装置および相補形mis論理回路 |
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- 2006-10-19 JP JP2006285170A patent/JP5068057B2/ja active Active
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2007
- 2007-04-20 US US11/738,039 patent/US7755168B2/en active Active
- 2007-04-23 TW TW096114247A patent/TWI337776B/zh active
- 2007-07-24 DE DE102007034349A patent/DE102007034349B4/de active Active
- 2007-08-01 KR KR1020070077322A patent/KR100878289B1/ko active IP Right Grant
- 2007-08-03 CN CN2007101399273A patent/CN101165915B/zh active Active
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Publication number | Publication date |
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US20080093707A1 (en) | 2008-04-24 |
CN101165915A (zh) | 2008-04-23 |
KR100878289B1 (ko) | 2009-01-13 |
DE102007034349B4 (de) | 2012-08-23 |
TWI337776B (en) | 2011-02-21 |
US7755168B2 (en) | 2010-07-13 |
TW200820421A (en) | 2008-05-01 |
CN101165915B (zh) | 2010-12-08 |
KR20080035443A (ko) | 2008-04-23 |
JP2008103551A (ja) | 2008-05-01 |
DE102007034349A1 (de) | 2008-04-30 |
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