JPS5698839A - Integrated circuit for dc load - Google Patents

Integrated circuit for dc load

Info

Publication number
JPS5698839A
JPS5698839A JP164380A JP164380A JPS5698839A JP S5698839 A JPS5698839 A JP S5698839A JP 164380 A JP164380 A JP 164380A JP 164380 A JP164380 A JP 164380A JP S5698839 A JPS5698839 A JP S5698839A
Authority
JP
Japan
Prior art keywords
layer
layers
transistor
separated
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP164380A
Other languages
Japanese (ja)
Inventor
Kiyoshi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Toyo Electronics Industry Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd, Toyo Electronics Industry Corp filed Critical Rohm Co Ltd
Priority to JP164380A priority Critical patent/JPS5698839A/en
Publication of JPS5698839A publication Critical patent/JPS5698839A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent erroneous operations to be caused by the parasitic transistor effects, by forming the capacitive or inductive DC load and the transistor for driving in the epitaxially grown layer separated with the established interval and by giving to such middle part of the layer within the epitaxial layer the preliminerily established voltage. CONSTITUTION:The N type epitaxially grown layer on the P type substrate having the N<+> buried layer is separated by P layers 56, 58. The base 62, 64 are formed in the N layers 54A, 56, the emitters 66, 68, 70 are formed in the layers 62, 54A, 540, and the transistor 60 is formed. The electrode is formed over the layers 64, 70, and the substrate 50 and the separated layer 540 is connected and earthed. The turnover of N layer 54A, 540 by Al electrode is prevented by the layers 68, 70. In this formation, the parasitic transistor 80 is formed through the layers 54A, 54B. When the transistor 60 is set in motion and the layer 54A goes below the electric potential on earthing, the current is fed for the most part from the layer 540 to the transistor 80. There are hardly any undesirable effects to the DC load circuit in the layers 54B, 54C, and the erroneous operations can be prevented.
JP164380A 1980-01-10 1980-01-10 Integrated circuit for dc load Pending JPS5698839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP164380A JPS5698839A (en) 1980-01-10 1980-01-10 Integrated circuit for dc load

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP164380A JPS5698839A (en) 1980-01-10 1980-01-10 Integrated circuit for dc load

Publications (1)

Publication Number Publication Date
JPS5698839A true JPS5698839A (en) 1981-08-08

Family

ID=11507196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP164380A Pending JPS5698839A (en) 1980-01-10 1980-01-10 Integrated circuit for dc load

Country Status (1)

Country Link
JP (1) JPS5698839A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877254A (en) * 1981-11-02 1983-05-10 Oki Electric Ind Co Ltd Integrated logic circuit device
JPS58186947A (en) * 1982-04-26 1983-11-01 Nec Corp Semiconductor device
JPS58213446A (en) * 1982-06-04 1983-12-12 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS58213445A (en) * 1982-06-04 1983-12-12 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS5932150A (en) * 1982-08-18 1984-02-21 Toshiba Corp Bipolar monolithic ic
US7755168B2 (en) 2006-10-19 2010-07-13 Mitsubishi Electric Corporation Semiconductor device provided with floating electrode
JP2016004883A (en) * 2014-06-16 2016-01-12 富士電機株式会社 Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123589A (en) * 1973-03-30 1974-11-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49123589A (en) * 1973-03-30 1974-11-26

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877254A (en) * 1981-11-02 1983-05-10 Oki Electric Ind Co Ltd Integrated logic circuit device
JPH0121632B2 (en) * 1981-11-02 1989-04-21 Oki Electric Ind Co Ltd
JPS58186947A (en) * 1982-04-26 1983-11-01 Nec Corp Semiconductor device
JPS58213446A (en) * 1982-06-04 1983-12-12 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS58213445A (en) * 1982-06-04 1983-12-12 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS5932150A (en) * 1982-08-18 1984-02-21 Toshiba Corp Bipolar monolithic ic
US7755168B2 (en) 2006-10-19 2010-07-13 Mitsubishi Electric Corporation Semiconductor device provided with floating electrode
DE102007034349B4 (en) * 2006-10-19 2012-08-23 Mitsubishi Electric Corp. Semiconductor device provided with a floating electrode
JP2016004883A (en) * 2014-06-16 2016-01-12 富士電機株式会社 Semiconductor integrated circuit device

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