DE69324902T2 - Speicherelement - Google Patents

Speicherelement

Info

Publication number
DE69324902T2
DE69324902T2 DE69324902T DE69324902T DE69324902T2 DE 69324902 T2 DE69324902 T2 DE 69324902T2 DE 69324902 T DE69324902 T DE 69324902T DE 69324902 T DE69324902 T DE 69324902T DE 69324902 T2 DE69324902 T2 DE 69324902T2
Authority
DE
Germany
Prior art keywords
storage element
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324902T
Other languages
English (en)
Other versions
DE69324902D1 (de
Inventor
Hiroshi Sakakima
Mitsuo Satomi
Yousuke Irie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69324902D1 publication Critical patent/DE69324902D1/de
Publication of DE69324902T2 publication Critical patent/DE69324902T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
DE69324902T 1993-02-18 1993-11-15 Speicherelement Expired - Fee Related DE69324902T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02874893A JP3184352B2 (ja) 1993-02-18 1993-02-18 メモリー素子

Publications (2)

Publication Number Publication Date
DE69324902D1 DE69324902D1 (de) 1999-06-17
DE69324902T2 true DE69324902T2 (de) 1999-09-16

Family

ID=12257035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324902T Expired - Fee Related DE69324902T2 (de) 1993-02-18 1993-11-15 Speicherelement

Country Status (4)

Country Link
US (1) US5459687A (de)
EP (1) EP0614192B1 (de)
JP (1) JP3184352B2 (de)
DE (1) DE69324902T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949707A (en) * 1996-09-06 1999-09-07 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
JPH08287422A (ja) * 1995-04-07 1996-11-01 Alps Electric Co Ltd 磁気抵抗効果型ヘッド
JP3207094B2 (ja) * 1995-08-21 2001-09-10 松下電器産業株式会社 磁気抵抗効果素子及びメモリー素子
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
US5898612A (en) * 1997-05-22 1999-04-27 Motorola, Inc. Magnetic memory cell with increased GMR ratio
US5864498A (en) * 1997-10-01 1999-01-26 High Density Circuits Ferromagnetic memory using soft magnetic material and hard magnetic material
DE19823826A1 (de) 1998-05-28 1999-12-02 Burkhard Hillebrands MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher
JP3891540B2 (ja) 1999-10-25 2007-03-14 キヤノン株式会社 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびｍｒａｍ
JP3618654B2 (ja) * 2000-09-11 2005-02-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
US6487110B2 (en) * 2000-09-27 2002-11-26 Canon Kabushiki Kaisha Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
US6717194B2 (en) * 2001-10-30 2004-04-06 Micron Technology, Inc. Magneto-resistive bit structure and method of manufacture therefor
JP2004259353A (ja) * 2003-02-25 2004-09-16 Sony Corp 不揮発性磁気メモリ装置、及び、不揮発性磁気メモリ装置におけるトンネル磁気抵抗素子へのデータ書込方法
JP4786331B2 (ja) 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
JP4514721B2 (ja) 2006-02-09 2010-07-28 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気記録再生装置及び磁気記憶装置
JP2007299880A (ja) 2006-04-28 2007-11-15 Toshiba Corp 磁気抵抗効果素子，および磁気抵抗効果素子の製造方法
JP4490950B2 (ja) * 2006-07-07 2010-06-30 株式会社東芝 磁気抵抗効果素子の製造方法、及び磁気抵抗効果素子
JP4550777B2 (ja) 2006-07-07 2010-09-22 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置及び磁気メモリ
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
JP2008252008A (ja) 2007-03-30 2008-10-16 Toshiba Corp 磁気抵抗効果素子、およびその製造方法
JP2008311373A (ja) * 2007-06-13 2008-12-25 Toshiba Corp 磁性多層膜通電素子
US20090159705A1 (en) 2007-12-24 2009-06-25 Dynamics Inc. Payment cards and devices operable to receive point-of-sale actions before point-of-sale and forward actions at point-of-sale
JP5150284B2 (ja) 2008-01-30 2013-02-20 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5361201B2 (ja) 2008-01-30 2013-12-04 株式会社東芝 磁気抵抗効果素子の製造方法
JP5039007B2 (ja) 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039006B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP2010080839A (ja) 2008-09-29 2010-04-08 Toshiba Corp 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリおよび磁気記録再生装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495224A (en) * 1960-04-19 1970-02-10 Massachusetts Inst Technology Thin film memory system
NL113856C (de) * 1960-12-01
FR2276658A1 (fr) * 1974-06-25 1976-01-23 Tecsi Poste de lecture pour un registre a propagation de domaines magnetiques sur une couche mince
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
EP0506433B2 (de) * 1991-03-29 2007-08-01 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element

Also Published As

Publication number Publication date
EP0614192B1 (de) 1999-05-12
JP3184352B2 (ja) 2001-07-09
EP0614192A3 (de) 1995-01-04
EP0614192A2 (de) 1994-09-07
JPH06243673A (ja) 1994-09-02
US5459687A (en) 1995-10-17
DE69324902D1 (de) 1999-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee