DE69626631D1 - Seitenmodusspeicher mit Mehrpegelspeicherzellen - Google Patents

Seitenmodusspeicher mit Mehrpegelspeicherzellen

Info

Publication number
DE69626631D1
DE69626631D1 DE69626631T DE69626631T DE69626631D1 DE 69626631 D1 DE69626631 D1 DE 69626631D1 DE 69626631 T DE69626631 T DE 69626631T DE 69626631 T DE69626631 T DE 69626631T DE 69626631 D1 DE69626631 D1 DE 69626631D1
Authority
DE
Germany
Prior art keywords
page mode
memory
memory cells
level
level memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69626631T
Other languages
English (en)
Other versions
DE69626631T2 (de
Inventor
Cristiano Calligaro
Roberto Gastaldi
Alessandro Manstretta
Paolo Cappelletti
Guido Torelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69626631D1 publication Critical patent/DE69626631D1/de
Application granted granted Critical
Publication of DE69626631T2 publication Critical patent/DE69626631T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5632—Multilevel reading using successive approximation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE69626631T 1996-06-05 1996-06-05 Seitenmodusspeicher mit Mehrpegelspeicherzellen Expired - Fee Related DE69626631T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830318A EP0811986B1 (de) 1996-06-05 1996-06-05 Seitenmodusspeicher mit Mehrpegelspeicherzellen

Publications (2)

Publication Number Publication Date
DE69626631D1 true DE69626631D1 (de) 2003-04-17
DE69626631T2 DE69626631T2 (de) 2003-11-06

Family

ID=8225926

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626631T Expired - Fee Related DE69626631T2 (de) 1996-06-05 1996-06-05 Seitenmodusspeicher mit Mehrpegelspeicherzellen

Country Status (4)

Country Link
US (1) US5757719A (de)
EP (1) EP0811986B1 (de)
JP (1) JPH1079198A (de)
DE (1) DE69626631T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945869B1 (de) * 1998-03-27 2004-11-17 STMicroelectronics S.r.l. Verfahren zum Lesen einer Mehrbitspeicherzelle
DE69916783D1 (de) * 1999-02-26 2004-06-03 St Microelectronics Srl Leseverfahren eines mehrwertigen, nichtflüchtigen Speichers, und mehrwertiger,nichtflüchtiger Speicher
US6912150B2 (en) * 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US20040249848A1 (en) * 2003-06-06 2004-12-09 Carlbom Ingrid Birgitta Method and apparatus for intelligent and automatic alert management using multimedia database system
TWI567742B (zh) * 2015-04-23 2017-01-21 旺宏電子股份有限公司 電子裝置及非揮發性記憶體裝置與編程方法
US9672930B2 (en) * 2015-05-29 2017-06-06 Silicon Storage Technology, Inc. Low power operation for flash memory system
US9672878B1 (en) * 2016-05-10 2017-06-06 Dialog Semiconductor (Uk) Limited Memory circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4462088A (en) * 1981-11-03 1984-07-24 International Business Machines Corporation Array design using a four state cell for double density
JP2632104B2 (ja) * 1991-11-07 1997-07-23 三菱電機株式会社 不揮発性半導体記憶装置
DE69305986T2 (de) * 1993-07-29 1997-03-06 Sgs Thomson Microelectronics Schaltungsstruktur für Speichermatrix und entsprechende Herstellungsverfahren
DE69514783T2 (de) * 1995-03-23 2000-06-08 Stmicroelectronics S.R.L., Agrate Brianza Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen

Also Published As

Publication number Publication date
EP0811986B1 (de) 2003-03-12
US5757719A (en) 1998-05-26
EP0811986A1 (de) 1997-12-10
JPH1079198A (ja) 1998-03-24
DE69626631T2 (de) 2003-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee