DE69414459D1 - Dynamischer Speicher mit Referenzzellen - Google Patents

Dynamischer Speicher mit Referenzzellen

Info

Publication number
DE69414459D1
DE69414459D1 DE69414459T DE69414459T DE69414459D1 DE 69414459 D1 DE69414459 D1 DE 69414459D1 DE 69414459 T DE69414459 T DE 69414459T DE 69414459 T DE69414459 T DE 69414459T DE 69414459 D1 DE69414459 D1 DE 69414459D1
Authority
DE
Germany
Prior art keywords
dynamic memory
reference cells
cells
dynamic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414459T
Other languages
English (en)
Other versions
DE69414459T2 (de
Inventor
Michel Harrand
Michel Runtz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69414459D1 publication Critical patent/DE69414459D1/de
Application granted granted Critical
Publication of DE69414459T2 publication Critical patent/DE69414459T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
DE69414459T 1993-05-24 1994-05-20 Dynamischer Speicher mit Referenzzellen Expired - Fee Related DE69414459T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9306533A FR2705821B1 (fr) 1993-05-24 1993-05-24 Mémoire dynamique.

Publications (2)

Publication Number Publication Date
DE69414459D1 true DE69414459D1 (de) 1998-12-17
DE69414459T2 DE69414459T2 (de) 1999-06-02

Family

ID=9447626

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414459T Expired - Fee Related DE69414459T2 (de) 1993-05-24 1994-05-20 Dynamischer Speicher mit Referenzzellen

Country Status (5)

Country Link
US (2) US5592428A (de)
EP (1) EP0626696B1 (de)
JP (1) JPH0750090A (de)
DE (1) DE69414459T2 (de)
FR (1) FR2705821B1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2757973B1 (fr) * 1996-12-27 1999-04-09 Sgs Thomson Microelectronics Processeur de traitement matriciel
US5781483A (en) * 1996-12-31 1998-07-14 Micron Technology, Inc. Device and method for repairing a memory array by storing each bit in multiple memory cells in the array
JP3481817B2 (ja) * 1997-04-07 2003-12-22 株式会社東芝 半導体記憶装置
US5959892A (en) * 1997-08-26 1999-09-28 Macronix International Co., Ltd. Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US6178118B1 (en) 1997-08-26 2001-01-23 Macronix International Co., Ltd. Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
US6185135B1 (en) 1999-01-05 2001-02-06 International Business Machines Corporation Robust wordline activation delay monitor using a plurality of sample wordlines
US6115310A (en) * 1999-01-05 2000-09-05 International Business Machines Corporation Wordline activation delay monitor using sample wordline located in data-storing array
US6028790A (en) * 1999-01-07 2000-02-22 Macronix International Co., Ltd. Method and device for programming a non-volatile memory cell by controlling source current pulldown rate
US6370072B1 (en) * 2000-11-30 2002-04-09 International Business Machines Corporation Low voltage single-input DRAM current-sensing amplifier
US6549476B2 (en) 2001-04-09 2003-04-15 Micron Technology, Inc. Device and method for using complementary bits in a memory array
US6577548B1 (en) * 2002-09-26 2003-06-10 International Business Machines Corporation Self timing interlock circuit for embedded DRAM
JP4010995B2 (ja) * 2003-07-31 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体メモリ及びそのリファレンス電位発生方法
KR100562646B1 (ko) 2004-12-22 2006-03-20 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
KR100562647B1 (ko) * 2004-12-22 2006-03-20 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
JP2006209817A (ja) * 2005-01-25 2006-08-10 Oki Electric Ind Co Ltd 半導体記憶装置およびメモリセルの救済方法
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
WO2016035401A1 (ja) * 2014-09-03 2016-03-10 オリンパス株式会社 内視鏡装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4363111A (en) * 1980-10-06 1982-12-07 Heightley John D Dummy cell arrangement for an MOS memory
JPS581889A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd 半導体記憶装置のダミ−セル制御方式
EP0068894B1 (de) * 1981-06-29 1989-12-13 Fujitsu Limited Dynamische Direktzugriffspeicheranordnung
US4961166A (en) * 1984-05-07 1990-10-02 Hitachi, Ltd. Dynamic RAM having a full size dummy cell
US4633443A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated Dynamic read/write memory circuits with equal-sized dummy and storage capacitors
US4547868A (en) * 1984-07-26 1985-10-15 Texas Instruments Incorporated Dummy-cell circuitry for dynamic read/write memory
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
JPH0787032B2 (ja) * 1985-07-08 1995-09-20 日本電気アイシ−マイコンシステム株式会社 半導体記憶装置
JPH0775248B2 (ja) * 1990-06-07 1995-08-09 株式会社東芝 ダイナミック型半導体メモリ
JP2573416B2 (ja) * 1990-11-28 1997-01-22 株式会社東芝 半導体記憶装置
JPH0612860A (ja) * 1992-06-29 1994-01-21 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
DE69414459T2 (de) 1999-06-02
US5590070A (en) 1996-12-31
EP0626696B1 (de) 1998-11-11
JPH0750090A (ja) 1995-02-21
FR2705821A1 (fr) 1994-12-02
FR2705821B1 (fr) 1995-08-11
US5592428A (en) 1997-01-07
EP0626696A1 (de) 1994-11-30

Similar Documents

Publication Publication Date Title
DE69422120D1 (de) Synchroner dynamischer Speicher mit wahlfreiem Zugriff
DE69521095D1 (de) Dynamischer Speicher mit geteilten Leseverstärkern
DE69316628D1 (de) Flüchtige Speicherzelle
DE69428652T2 (de) Halbleiterspeicher mit mehreren Banken
DE3771288D1 (de) Dynamischer speicher mit wahlfreiem zugriff.
DE69606065T2 (de) Dynamischer speicher mit niedriger spannung
DE69022609D1 (de) Dynamische Speicherzelle mit wahlfreiem Zugriff.
DE69328639D1 (de) Halbleiterspeicheranordnung mit Ersatzspeicherzellen
DE69323861D1 (de) Multiprozessorsystem mit gemeinsamem Speicher
DE69614787T2 (de) Speichermatrix mit mehrzustandsspeicherzellen
DE69414459D1 (de) Dynamischer Speicher mit Referenzzellen
DE69322734D1 (de) Synchroner statischer Speicher mit wahlfreien Zugriff
DE69316955T2 (de) Rechenanlage mit synchronem, dynamischem Speicher
DE69411406T2 (de) Stromspeicher
DE69419558T2 (de) Inhalt-adressierbarer Speicher
DE69521656D1 (de) Dynamischer Speicher
DE69220465T2 (de) Halbleiteranordnung mit Speicherzelle
DE68928840D1 (de) Synchroner dynamischer Speicher
DE69413567D1 (de) Prozessorsystem mit ferroelektrischem Speicher
DE69626472D1 (de) Halbleiterspeicher mit redundanten Speicherzellen
DE69833326D1 (de) Speicher mit verarbeitungsfunktion
DE69626631T2 (de) Seitenmodusspeicher mit Mehrpegelspeicherzellen
DE69319053D1 (de) Mikroprozessorsystem mit dynamischem RAM Speicher
DE69417994D1 (de) Speicheranordnung
DE69840995D1 (de) Speicher mit mehreren Banken

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee