DE69716844D1 - Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ - Google Patents

Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ

Info

Publication number
DE69716844D1
DE69716844D1 DE69716844T DE69716844T DE69716844D1 DE 69716844 D1 DE69716844 D1 DE 69716844D1 DE 69716844 T DE69716844 T DE 69716844T DE 69716844 T DE69716844 T DE 69716844T DE 69716844 D1 DE69716844 D1 DE 69716844D1
Authority
DE
Germany
Prior art keywords
memory cell
data writing
ferroelectric memory
writing method
transistor type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69716844T
Other languages
English (en)
Other versions
DE69716844T2 (de
Inventor
Hiroshi Ishihara
Eisuke Tokumitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Institute of Technology NUC
Original Assignee
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Institute of Technology NUC filed Critical Tokyo Institute of Technology NUC
Publication of DE69716844D1 publication Critical patent/DE69716844D1/de
Application granted granted Critical
Publication of DE69716844T2 publication Critical patent/DE69716844T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
DE69716844T 1996-08-20 1997-08-07 Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ Expired - Fee Related DE69716844T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8218215A JP2838196B2 (ja) 1996-08-20 1996-08-20 単一トランジスタ型強誘電体メモリへのデータ書込み方法

Publications (2)

Publication Number Publication Date
DE69716844D1 true DE69716844D1 (de) 2002-12-12
DE69716844T2 DE69716844T2 (de) 2003-09-04

Family

ID=16716427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69716844T Expired - Fee Related DE69716844T2 (de) 1996-08-20 1997-08-07 Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ

Country Status (6)

Country Link
US (1) US5822239A (de)
EP (1) EP0827153B1 (de)
JP (1) JP2838196B2 (de)
KR (1) KR100265061B1 (de)
DE (1) DE69716844T2 (de)
TW (1) TW343334B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100243294B1 (ko) * 1997-06-09 2000-02-01 윤종용 반도체장치의 강유전체 메모리 셀 및 어레이
US6067244A (en) * 1997-10-14 2000-05-23 Yale University Ferroelectric dynamic random access memory
DE69840486D1 (de) * 1997-11-14 2009-03-05 Rohm Co Ltd Halbleiterspeicher und Zugriffsverfahren hierauf
DE19913571C2 (de) * 1999-03-25 2002-11-07 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen, die je einen ferroelektrischen Speichertransistor aufweisen
US6255122B1 (en) 1999-04-27 2001-07-03 International Business Machines Corporation Amorphous dielectric capacitors on silicon
US6388285B1 (en) 1999-06-04 2002-05-14 International Business Machines Corporation Feram cell with internal oxygen source and method of oxygen release
JP3390704B2 (ja) * 1999-08-26 2003-03-31 株式会社半導体理工学研究センター 強誘電体不揮発性メモリ
JP3956190B2 (ja) * 2000-01-28 2007-08-08 セイコーエプソン株式会社 強誘電体キャパシタアレイ及び強誘電体メモリの製造方法
WO2002082510A1 (en) * 2000-08-24 2002-10-17 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
WO2002071477A1 (en) 2001-03-02 2002-09-12 Cova Technologies Incorporated Single transistor rare earth manganite ferroelectric nonvolatile memory cell
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4373647B2 (ja) 2002-06-19 2009-11-25 独立行政法人産業技術総合研究所 強誘電体不揮発性記憶装置及びその駆動方法
US7066088B2 (en) * 2002-07-31 2006-06-27 Day International, Inc. Variable cut-off offset press system and method of operation
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
US6888736B2 (en) 2002-09-19 2005-05-03 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
US6714435B1 (en) * 2002-09-19 2004-03-30 Cova Technologies, Inc. Ferroelectric transistor for storing two data bits
KR100529989B1 (ko) * 2003-03-07 2005-11-22 산요덴키가부시키가이샤 메모리
JP3970259B2 (ja) * 2003-09-11 2007-09-05 三洋電機株式会社 メモリ
US8154002B2 (en) * 2004-12-06 2012-04-10 President And Fellows Of Harvard College Nanoscale wire-based data storage
KR100702840B1 (ko) * 2005-07-13 2007-04-03 삼성전자주식회사 강유전체 메모리 장치 및 그에 따른 라이팅 구간 제어방법
US8164941B2 (en) * 2006-12-27 2012-04-24 Hynix Semiconductor Inc. Semiconductor memory device with ferroelectric device and refresh method thereof
JP2008276934A (ja) * 2008-06-27 2008-11-13 Seiko Epson Corp 強誘電体記憶装置及びその駆動方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002182A (en) * 1956-12-10 1961-09-26 Bell Telephone Labor Inc Ferroelectric storage circuits and methods
US4571585A (en) * 1983-03-17 1986-02-18 General Electric Company Matrix addressing of cholesteric liquid crystal display
JPH0731705B2 (ja) * 1992-08-24 1995-04-10 東京工業大学長 自己学習型積和演算回路素子及び回路
US5666305A (en) * 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
JPH0731705A (ja) * 1993-07-20 1995-02-03 Shoei Koken:Kk スキューバダイビング練習場
JPH0745794A (ja) * 1993-07-26 1995-02-14 Olympus Optical Co Ltd 強誘電体メモリの駆動方法

Also Published As

Publication number Publication date
KR19980018769A (ko) 1998-06-05
EP0827153B1 (de) 2002-11-06
JP2838196B2 (ja) 1998-12-16
EP0827153A3 (de) 1998-07-22
EP0827153A2 (de) 1998-03-04
US5822239A (en) 1998-10-13
JPH1064255A (ja) 1998-03-06
DE69716844T2 (de) 2003-09-04
TW343334B (en) 1998-10-21
KR100265061B1 (ko) 2000-10-02

Similar Documents

Publication Publication Date Title
DE69716844D1 (de) Datenschreibverfahren in einer ferroelektrischen Speicherzelle vom Ein-Transistor-Typ
DE69424927D1 (de) Datenleseverfahren in Halbleiterspeicheranordnung geeignet zum Speichern von drei- oder mehrwertigen Daten in einer Speicherzelle
DE69524844T2 (de) Speicherdaten-Sicherung für ferroelektrischen Speicher
EP0443989A3 (en) Sense circuit for reading data stored in nonvolatile memory cells
EP0615247A3 (de) Ferroelektrische Speicherzelle und Lese- und Schreibe-Verfahren ihres Polarizationszustands.
DE4495101T1 (de) Speicherelemente, nichtflüchtige Speicher, nichtflüchtige Speichervorrichtungen und darauf basierende Verfahren zur Informationsspeicherung
DE69531093D1 (de) Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers
DE69431053D1 (de) Elektrisch löschbarer, unmittelbar überschreibbarer, aus multibit-einzelzellen bestehender speicher und daraus hergestellte speichermatrix
DE69521637D1 (de) Halbleiterspeicheranordnung, die in einer einzigen Speicherzelle Multibit-Daten speichern kann
DE68919393D1 (de) Nichtflüchtige Speicherzelle und Verfahren zum Lesen.
FI953204A0 (fi) Datamuistin jakaminen moniprosessorijärjestelmissä
DE69811181T2 (de) Leseverfahren für ferroelektrischen 1T/1C-Speicher
DE69520265D1 (de) Ferroelektrische Speicherzelle und ihre Lese- und Schreibeverfahren
DE69619794D1 (de) Speicherzelle zum lesen und schreiben einer registerbank
DE69820164D1 (de) Speichervorrichtung sowie Datenlese- und Schreibverfahren
SG97818A1 (en) Ferroelectric storage read-write memory
DE69629669D1 (de) Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
DE69321685D1 (de) Datenlöschverfahren in einem nicht-flüchtigen Halbleiterspeicher
KR960008832A (ko) 강유전성 인터럽터블 판독 메모리
DE69726832D1 (de) Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle
DE69326329D1 (de) Speicherzellen-Stromleseverfahren in Mikrosteuergerät
KR960008843A (ko) 레이머-드랩 효과를 이용하는 비-파괴성 판독 강유전성 메모리 셀과 데이타 저장 및 복구 방법
DE69527252T2 (de) Lesen einer Bitleitung in einer Speichermatrix
DE59903566D1 (de) Resistive ferroelektrische speicherzelle
DE69626654D1 (de) Mehrfaches schreiben pro einfachem löschen in nichtflüchtigem speicher

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee