DE69531093D1 - Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers - Google Patents

Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers

Info

Publication number
DE69531093D1
DE69531093D1 DE69531093T DE69531093T DE69531093D1 DE 69531093 D1 DE69531093 D1 DE 69531093D1 DE 69531093 T DE69531093 T DE 69531093T DE 69531093 T DE69531093 T DE 69531093T DE 69531093 D1 DE69531093 D1 DE 69531093D1
Authority
DE
Germany
Prior art keywords
recovery method
dram memory
memory reading
state dram
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531093T
Other languages
English (en)
Other versions
DE69531093T2 (de
Inventor
Peter B Gillingham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Application granted granted Critical
Publication of DE69531093D1 publication Critical patent/DE69531093D1/de
Publication of DE69531093T2 publication Critical patent/DE69531093T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69531093T 1994-12-30 1995-12-28 Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers Expired - Lifetime DE69531093T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/366,921 US5532955A (en) 1994-12-30 1994-12-30 Method of multilevel dram sense and restore
US366921 1994-12-30

Publications (2)

Publication Number Publication Date
DE69531093D1 true DE69531093D1 (de) 2003-07-24
DE69531093T2 DE69531093T2 (de) 2004-05-06

Family

ID=23445168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531093T Expired - Lifetime DE69531093T2 (de) 1994-12-30 1995-12-28 Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers

Country Status (4)

Country Link
US (2) US5532955A (de)
EP (1) EP0720176B1 (de)
JP (1) JP3771617B2 (de)
DE (1) DE69531093T2 (de)

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USRE40075E1 (en) * 1992-07-22 2008-02-19 Mosaid Technologies, Incorporated Method of multi-level storage in DRAM and apparatus thereof
US5532955A (en) * 1994-12-30 1996-07-02 Mosaid Technologies Incorporated Method of multilevel dram sense and restore
KR0166046B1 (ko) * 1995-10-06 1999-02-01 김주용 계층적 비트라인 구조를 갖는 반도체 메모리 장치
US5684736A (en) * 1996-06-17 1997-11-04 Nuram Technology, Inc. Multilevel memory cell sense amplifier system
US6857099B1 (en) * 1996-09-18 2005-02-15 Nippon Steel Corporation Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
US5982659A (en) * 1996-12-23 1999-11-09 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using different via resistances
US5784328A (en) * 1996-12-23 1998-07-21 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a DRAM array
US5847990A (en) * 1996-12-23 1998-12-08 Lsi Logic Corporation Ram cell capable of storing 3 logic states
US5761110A (en) * 1996-12-23 1998-06-02 Lsi Logic Corporation Memory cell capable of storing more than two logic states by using programmable resistances
US5808932A (en) * 1996-12-23 1998-09-15 Lsi Logic Corporation Memory system which enables storage and retrieval of more than two states in a memory cell
US5771187A (en) * 1996-12-23 1998-06-23 Lsi Logic Corporation Multiple level storage DRAM cell
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US5995431A (en) * 1997-06-11 1999-11-30 Texas Instruments Incorporated Bit line precharge circuit with reduced standby current
US5901078A (en) 1997-06-19 1999-05-04 Micron Technology, Inc. Variable voltage isolation gate and method
US6554705B1 (en) 1997-08-22 2003-04-29 Blake Cumbers Passive biometric customer identification and tracking system
CA2217359C (en) * 1997-09-30 2005-04-12 Mosaid Technologies Incorporated Method for multilevel dram sensing
US5956350A (en) * 1997-10-27 1999-09-21 Lsi Logic Corporation Built in self repair for DRAMs using on-chip temperature sensing and heating
EP0920029A3 (de) * 1997-12-01 1999-07-14 Texas Instruments Incorporated RAM-Speicher mit mehreren Zuständen
US6279133B1 (en) 1997-12-31 2001-08-21 Kawasaki Steel Corporation Method and apparatus for significantly improving the reliability of multilevel memory architecture
US5917748A (en) * 1998-03-17 1999-06-29 Vanguard International Semiconductor Corporation Multi-level DRAM sensing scheme
US5909404A (en) * 1998-03-27 1999-06-01 Lsi Logic Corporation Refresh sampling built-in self test and repair circuit
US6137739A (en) * 1998-06-29 2000-10-24 Hyundai Electronics Industries Co., Ltd. Multilevel sensing circuit and method thereof
CA2273122A1 (en) 1999-05-26 2000-11-26 Gershom Birk Multilevel dram with local reference generation
JP3415502B2 (ja) * 1999-07-30 2003-06-09 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
US6292395B1 (en) 1999-12-30 2001-09-18 Macronix International Co., Ltd. Source and drain sensing
US6901007B2 (en) * 2001-01-11 2005-05-31 Micron Technology, Inc. Memory device with multi-level storage cells and apparatuses, systems and methods including same
US6587372B2 (en) * 2001-01-11 2003-07-01 Micron Technology, Inc. Memory device with multi-level storage cells and apparatuses, systems and methods including same
US7209245B2 (en) * 2001-09-20 2007-04-24 Sharp Laboratories Of America, Inc. Printing systems, softwares, and methods for user characterization of unknown printer media
US6940772B1 (en) 2002-03-18 2005-09-06 T-Ram, Inc Reference cells for TCCT based memory cells
US7123508B1 (en) 2002-03-18 2006-10-17 T-Ram, Inc. Reference cells for TCCT based memory cells
US20030235089A1 (en) * 2002-04-02 2003-12-25 Gerhard Mueller Memory array with diagonal bitlines
KR100512168B1 (ko) * 2002-09-11 2005-09-02 삼성전자주식회사 미소 전압차를 감지하는 감지증폭기 및 감지 증폭 방법
JP4084149B2 (ja) * 2002-09-13 2008-04-30 富士通株式会社 半導体記憶装置
US7936829B2 (en) * 2004-10-22 2011-05-03 Lsi Corporation Driving multiple consecutive bits in a serial data stream at multiple voltage levels
US8773925B2 (en) 2010-02-23 2014-07-08 Rambus Inc. Multilevel DRAM
US8345469B2 (en) 2010-09-16 2013-01-01 Freescale Semiconductor, Inc. Static random access memory (SRAM) having bit cells accessible by separate read and write paths
US9111638B2 (en) 2012-07-13 2015-08-18 Freescale Semiconductor, Inc. SRAM bit cell with reduced bit line pre-charge voltage
KR20160074826A (ko) 2014-12-18 2016-06-29 삼성전자주식회사 반도체 장치
US10652032B2 (en) * 2017-06-20 2020-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Device signature generation
KR20190073102A (ko) 2017-12-18 2019-06-26 삼성전자주식회사 비트 라인 감지 증폭기, 반도체 메모리 장치, 그리고 그것의 멀티 비트 데이터의 센싱 방법
US10667621B2 (en) * 2018-04-19 2020-06-02 Micron Technology, Inc. Multi-stage memory sensing
US10706911B1 (en) 2018-10-10 2020-07-07 Samsung Electronics Co., Ltd. Sense amplifier for sensing multi-level cell and memory device including the sense amplifier

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287570A (en) * 1979-06-01 1981-09-01 Intel Corporation Multiple bit read-only memory cell and its sense amplifier
US4415992A (en) * 1981-02-25 1983-11-15 Motorola, Inc. Memory system having memory cells capable of storing more than two states
JPS59203298A (ja) * 1983-05-04 1984-11-17 Nec Corp 半導体メモリ
DE3485595D1 (de) * 1983-12-23 1992-04-23 Hitachi Ltd Halbleiterspeicher mit einer speicherstruktur mit vielfachen pegeln.
US4771404A (en) * 1984-09-05 1988-09-13 Nippon Telegraph And Telephone Corporation Memory device employing multilevel storage circuits
JP2618938B2 (ja) * 1987-11-25 1997-06-11 株式会社東芝 半導体記憶装置
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
JP2719237B2 (ja) * 1990-12-20 1998-02-25 シャープ株式会社 ダイナミック型半導体記憶装置
US5283761A (en) * 1992-07-22 1994-02-01 Mosaid Technologies Incorporated Method of multi-level storage in DRAM
JPH07114792A (ja) * 1993-10-19 1995-05-02 Mitsubishi Electric Corp 半導体記憶装置
JP3237971B2 (ja) * 1993-09-02 2001-12-10 株式会社東芝 半導体記憶装置
US5532955A (en) * 1994-12-30 1996-07-02 Mosaid Technologies Incorporated Method of multilevel dram sense and restore

Also Published As

Publication number Publication date
US5612912A (en) 1997-03-18
EP0720176A3 (de) 1998-01-14
EP0720176A2 (de) 1996-07-03
DE69531093T2 (de) 2004-05-06
US5532955A (en) 1996-07-02
JPH08315568A (ja) 1996-11-29
JP3771617B2 (ja) 2006-04-26
EP0720176B1 (de) 2003-06-18

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