DE69612783D1 - Leseverfahren eines ferroelektrischen Speichers - Google Patents
Leseverfahren eines ferroelektrischen SpeichersInfo
- Publication number
- DE69612783D1 DE69612783D1 DE69612783T DE69612783T DE69612783D1 DE 69612783 D1 DE69612783 D1 DE 69612783D1 DE 69612783 T DE69612783 T DE 69612783T DE 69612783 T DE69612783 T DE 69612783T DE 69612783 D1 DE69612783 D1 DE 69612783D1
- Authority
- DE
- Germany
- Prior art keywords
- ferroelectric memory
- reading method
- reading
- ferroelectric
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/420,752 US5530668A (en) | 1995-04-12 | 1995-04-12 | Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69612783D1 true DE69612783D1 (de) | 2001-06-21 |
DE69612783T2 DE69612783T2 (de) | 2001-08-30 |
Family
ID=23667700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69612783T Expired - Fee Related DE69612783T2 (de) | 1995-04-12 | 1996-03-12 | Leseverfahren eines ferroelektrischen Speichers |
Country Status (4)
Country | Link |
---|---|
US (1) | US5530668A (de) |
EP (1) | EP0737982B1 (de) |
JP (1) | JP3238068B2 (de) |
DE (1) | DE69612783T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5592410A (en) * | 1995-04-10 | 1997-01-07 | Ramtron International Corporation | Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation |
US5579257A (en) * | 1995-08-31 | 1996-11-26 | Motorola, Inc. | Method for reading and restoring data in a data storage element |
TW322578B (de) * | 1996-03-18 | 1997-12-11 | Matsushita Electron Co Ltd | |
US5990513A (en) * | 1996-10-08 | 1999-11-23 | Ramtron International Corporation | Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion |
JP3933736B2 (ja) * | 1996-12-09 | 2007-06-20 | ローム株式会社 | 強誘電体コンデンサを備えた半導体装置 |
US6016267A (en) * | 1998-02-17 | 2000-01-18 | International Business Machines | High speed, high bandwidth, high density, nonvolatile memory system |
US6157979A (en) * | 1998-03-14 | 2000-12-05 | Advanced Technology Materials, Inc. | Programmable controlling device with non-volatile ferroelectric state-machines for restarting processor when power is restored with execution states retained in said non-volatile state-machines on power down |
JP2000187990A (ja) | 1998-12-24 | 2000-07-04 | Nec Corp | センスアンプ回路及びそれを用いた記憶装置並びにそれに用いる読出し方法 |
US6242299B1 (en) | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
JP2001043694A (ja) * | 1999-07-30 | 2001-02-16 | Oki Electric Ind Co Ltd | 半導体記憶素子 |
US6141238A (en) * | 1999-08-30 | 2000-10-31 | Micron Technology, Inc. | Dynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including same |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US7193893B2 (en) * | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
US6888739B2 (en) * | 2002-06-21 | 2005-05-03 | Micron Technology Inc. | Nanocrystal write once read only memory for archival storage |
US6996009B2 (en) | 2002-06-21 | 2006-02-07 | Micron Technology, Inc. | NOR flash memory cell with high storage density |
US7154140B2 (en) * | 2002-06-21 | 2006-12-26 | Micron Technology, Inc. | Write once read only memory with large work function floating gates |
US6970370B2 (en) * | 2002-06-21 | 2005-11-29 | Micron Technology, Inc. | Ferroelectric write once read only memory for archival storage |
US6804136B2 (en) * | 2002-06-21 | 2004-10-12 | Micron Technology, Inc. | Write once read only memory employing charge trapping in insulators |
US7221017B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US20050055495A1 (en) * | 2003-09-05 | 2005-03-10 | Nokia Corporation | Memory wear leveling |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
US9786346B2 (en) | 2015-05-20 | 2017-10-10 | Micron Technology, Inc. | Virtual ground sensing circuitry and related devices, systems, and methods for crosspoint ferroelectric memory |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4397003A (en) * | 1980-06-02 | 1983-08-02 | Mostek Corporation | Dynamic random access memory |
US4918654A (en) * | 1987-07-02 | 1990-04-17 | Ramtron Corporation | SRAM with programmable capacitance divider |
JPH088339B2 (ja) * | 1988-10-19 | 1996-01-29 | 株式会社東芝 | 半導体メモリ |
US5121353A (en) * | 1989-07-06 | 1992-06-09 | Kabushiki Kaisha Toshiba | Ferroelectric capacitor memory circuit MOS setting and transmission transistor |
US5075571A (en) * | 1991-01-02 | 1991-12-24 | International Business Machines Corp. | PMOS wordline boost cricuit for DRAM |
KR970000870B1 (ko) * | 1992-12-02 | 1997-01-20 | 마쯔시다덴기산교 가부시기가이샤 | 반도체메모리장치 |
US5432731A (en) * | 1993-03-08 | 1995-07-11 | Motorola, Inc. | Ferroelectric memory cell and method of sensing and writing the polarization state thereof |
-
1995
- 1995-04-12 US US08/420,752 patent/US5530668A/en not_active Expired - Lifetime
-
1996
- 1996-03-12 DE DE69612783T patent/DE69612783T2/de not_active Expired - Fee Related
- 1996-03-12 EP EP96301668A patent/EP0737982B1/de not_active Expired - Lifetime
- 1996-04-12 JP JP09110496A patent/JP3238068B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69612783T2 (de) | 2001-08-30 |
JPH08293195A (ja) | 1996-11-05 |
EP0737982A3 (de) | 1998-07-15 |
JP3238068B2 (ja) | 2001-12-10 |
EP0737982B1 (de) | 2001-05-16 |
US5530668A (en) | 1996-06-25 |
EP0737982A2 (de) | 1996-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69612783T2 (de) | Leseverfahren eines ferroelektrischen Speichers | |
DE69531093D1 (de) | Lese- und Wiederherstellungsverfahren eines Mehrzustand-DRAM-Speichers | |
DE69612676D1 (de) | Ferroelektrischer Direktzugriffspeicher | |
DE69630758D1 (de) | Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher | |
DE69617372T2 (de) | Datenaufzeichnungs-/-wiedergabeverfahren | |
DE69626259D1 (de) | Magnetischer Speicher und zugehöriges Verfahren | |
DE69609862D1 (de) | Datenbasiszugriff | |
KR970700917A (ko) | 적응 감지 기능을 갖는 플래쉬(flash)메모리 및 방법(FLASH MEMORY HAVING ADAPTIVE SENSING AND METHOD) | |
DE69501203D1 (de) | Verfahren zum vorzeitigen Lesen eines seriellen Zugriffspeichers und entsprechender Speicher | |
DE69811181T2 (de) | Leseverfahren für ferroelektrischen 1T/1C-Speicher | |
DE69525732T2 (de) | Kartenförmiges Speichermedium | |
DE69621165T2 (de) | Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung | |
DE69513113T2 (de) | Verfahren zum synchronen Speicherzugriff | |
DE69624155T2 (de) | Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung | |
KR960008832A (ko) | 강유전성 인터럽터블 판독 메모리 | |
DE69731255D1 (de) | Verfahren zum Löschen eines nichtflüchtigen Speichers | |
DE69600963D1 (de) | Verfahren und Schaltkreis zum Programmieren und Löschen eines Speichers | |
DE69602984D1 (de) | Verfahren zum Schützen nichtflüchtiger Speicherbereiche | |
DE69530649T2 (de) | Ferroelektrischer Speicher | |
DE69628396D1 (de) | Datenaufzeichnungsverfahren | |
DE69623898T2 (de) | Verfahren zum lesen von informationen | |
DE69718846D1 (de) | Verfahren zum Speicherzugriff | |
DE69620654D1 (de) | Ferroelektrischer Speicher und Verfahren für seine Betriebswirkung | |
DE69615457T2 (de) | Datenspeicherelement und Datenwiederherstellungsverfahren | |
DE69731435D1 (de) | Verfahren zum Lesen eines Nur-Lese-Speichers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |