TW283235B - - Google Patents

Info

Publication number
TW283235B
TW283235B TW084109603A TW84109603A TW283235B TW 283235 B TW283235 B TW 283235B TW 084109603 A TW084109603 A TW 084109603A TW 84109603 A TW84109603 A TW 84109603A TW 283235 B TW283235 B TW 283235B
Authority
TW
Taiwan
Application number
TW084109603A
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of TW283235B publication Critical patent/TW283235B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
TW084109603A 1994-08-26 1995-09-12 TW283235B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/296,835 US5729488A (en) 1994-08-26 1994-08-26 Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect

Publications (1)

Publication Number Publication Date
TW283235B true TW283235B (zh) 1996-08-11

Family

ID=23143779

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109603A TW283235B (zh) 1994-08-26 1995-09-12

Country Status (5)

Country Link
US (1) US5729488A (zh)
JP (1) JP3040700B2 (zh)
KR (1) KR100218133B1 (zh)
GB (1) GB2292852B (zh)
TW (1) TW283235B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514918B (en) * 2000-11-17 2002-12-21 Macronix Int Co Ltd Method and structure for sensing the polarity of ferro-electric capacitor in the ferro-electric memory
NO316580B1 (no) * 2000-11-27 2004-02-23 Thin Film Electronics Asa Fremgangsmåte til ikke-destruktiv utlesing og apparat til bruk ved fremgangsmåten
US6842357B2 (en) * 2002-04-23 2005-01-11 Intel Corporation Nondestructive sensing mechanism for polarized materials
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
US6803794B2 (en) 2003-02-26 2004-10-12 Raytheon Company Differential capacitance sense amplifier
US7102908B2 (en) * 2003-08-29 2006-09-05 Infineon Technologies Ag Reliable ferro fuse cell
US7821808B2 (en) * 2009-01-30 2010-10-26 Seagate Technology Llc Multilayer ferroelectric data storage system with regenerative read
DE102011012738B3 (de) * 2011-02-24 2012-02-02 Forschungszentrum Jülich GmbH Verfahren zum nichtdestruktiven Auslesen resistiver Speicherelemente und Speicherelement

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE530121A (zh) * 1953-07-03
NL94487C (zh) * 1953-10-01
US3132326A (en) * 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US3401377A (en) * 1967-05-23 1968-09-10 Bliss E W Co Ceramic memory having a piezoelectric drive member
GB1283607A (en) * 1969-05-23 1972-08-02 Plessey Co Ltd Improvements in and relating to optical switching arrangements
US4791611A (en) * 1985-09-11 1988-12-13 University Of Waterloo VLSI dynamic memory
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4980734A (en) * 1988-05-31 1990-12-25 Texas Instruments Incorporated Dynamic memory cell using silicon-on-insulator transistor with trench capacitor
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
US5309390A (en) * 1990-12-19 1994-05-03 The Charles Stark Draper Laboratory, Inc. Ferroelectric space charge capacitor memory
US5151877A (en) * 1990-12-19 1992-09-29 The Charles Stark Draper Lab., Inc. Ferroelectric space charge capacitor memory system
US5218566A (en) * 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
US5375085A (en) * 1992-09-30 1994-12-20 Texas Instruments Incorporated Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers
JP3222243B2 (ja) * 1993-01-25 2001-10-22 株式会社日立製作所 半導体記憶装置とそれを用いた情報処理システム
US5432731A (en) * 1993-03-08 1995-07-11 Motorola, Inc. Ferroelectric memory cell and method of sensing and writing the polarization state thereof
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory

Also Published As

Publication number Publication date
KR100218133B1 (ko) 1999-09-01
JP3040700B2 (ja) 2000-05-15
GB2292852B (en) 1998-08-05
GB9516273D0 (en) 1995-10-11
JPH08212788A (ja) 1996-08-20
KR960008843A (ko) 1996-03-22
GB2292852A (en) 1996-03-06
US5729488A (en) 1998-03-17

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent