FR2772508B1 - Dispositif de memoire ferroelectrique et son procede de pilotage - Google Patents

Dispositif de memoire ferroelectrique et son procede de pilotage

Info

Publication number
FR2772508B1
FR2772508B1 FR9813504A FR9813504A FR2772508B1 FR 2772508 B1 FR2772508 B1 FR 2772508B1 FR 9813504 A FR9813504 A FR 9813504A FR 9813504 A FR9813504 A FR 9813504A FR 2772508 B1 FR2772508 B1 FR 2772508B1
Authority
FR
France
Prior art keywords
memory device
driving method
ferroelectric memory
ferroelectric
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9813504A
Other languages
English (en)
Other versions
FR2772508A1 (fr
Inventor
Masaki Aoki
Hirotaka Famura
Hideki Takauchi
Takashi Eshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2772508A1 publication Critical patent/FR2772508A1/fr
Application granted granted Critical
Publication of FR2772508B1 publication Critical patent/FR2772508B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
FR9813504A 1997-10-28 1998-10-28 Dispositif de memoire ferroelectrique et son procede de pilotage Expired - Fee Related FR2772508B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29587997 1997-10-28
JP29587897 1997-10-28

Publications (2)

Publication Number Publication Date
FR2772508A1 FR2772508A1 (fr) 1999-06-18
FR2772508B1 true FR2772508B1 (fr) 2000-10-13

Family

ID=26560448

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9813504A Expired - Fee Related FR2772508B1 (fr) 1997-10-28 1998-10-28 Dispositif de memoire ferroelectrique et son procede de pilotage

Country Status (3)

Country Link
US (1) US6191441B1 (fr)
KR (1) KR100332511B1 (fr)
FR (1) FR2772508B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60021041T2 (de) * 1999-10-13 2006-05-04 Rohm Co. Ltd. Nichtflüchtiger Speicher und Steuerungsverfahren dafür
JP2001256774A (ja) * 2000-03-09 2001-09-21 Matsushita Electric Ind Co Ltd 半導体記憶装置のデータ読み出し方法、データ書き込み方法および駆動方法
US6720596B2 (en) * 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same
US6448599B1 (en) * 2000-11-29 2002-09-10 United Microelectronics Corp. Semiconductor device for preventing process-induced charging damages
JP2002245777A (ja) * 2001-02-20 2002-08-30 Hitachi Ltd 半導体装置
US6960801B2 (en) * 2001-06-14 2005-11-01 Macronix International Co., Ltd. High density single transistor ferroelectric non-volatile memory
US6900487B2 (en) * 2001-06-29 2005-05-31 Oki Electric Industry Co., Ltd. Wiring layer structure for ferroelectric capacitor
US6876567B2 (en) * 2001-12-21 2005-04-05 Intel Corporation Ferroelectric memory device and method of reading a ferroelectric memory
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP2003258133A (ja) * 2002-03-05 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法および半導体装置の製造方法
KR20030089078A (ko) * 2002-05-16 2003-11-21 주식회사 하이닉스반도체 자기터널접합소자를 갖는 자기메모리셀
CN101101789A (zh) * 2002-07-23 2008-01-09 松下电器产业株式会社 铁电门器件
JP2010044844A (ja) * 2008-08-18 2010-02-25 Toshiba Corp 半導体記憶装置
CN102194794B (zh) * 2010-03-05 2013-09-11 中芯国际集成电路制造(上海)有限公司 等离子体损伤检测结构、其检测方法及其形成方法
US8867256B2 (en) * 2012-09-25 2014-10-21 Palo Alto Research Center Incorporated Systems and methods for writing and non-destructively reading ferroelectric memories
KR102405521B1 (ko) * 2021-01-06 2022-06-03 연세대학교 산학협력단 강유전체 메모리 장치 및 이의 리드/라이트 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4041271C2 (de) * 1989-12-25 1998-10-08 Toshiba Kawasaki Kk Halbleitervorrichtung mit einem ferroelektrischen Kondensator
JP3021614B2 (ja) * 1990-11-06 2000-03-15 オリンパス光学工業株式会社 メモリ素子
EP0494693B1 (fr) 1991-01-11 1998-04-01 Canon Kabushiki Kaisha Appareil d'enregistrement par jet d'encre
JPH05129625A (ja) 1991-11-06 1993-05-25 Rohm Co Ltd 半導体記憶装置
JP3098629B2 (ja) 1992-09-18 2000-10-16 株式会社日立製作所 強誘電体トランジスタ、それを用いた半導体記憶デバイス、半導体応用機器及び人工知能システム
JPH06119773A (ja) 1992-10-06 1994-04-28 Hitachi Ltd 半導体メモリ
JP2929909B2 (ja) 1993-10-07 1999-08-03 株式会社デンソー 電界効果型トランジスタ
JP3136045B2 (ja) * 1994-04-28 2001-02-19 沖電気工業株式会社 メモリセルトランジスタ
JP3669742B2 (ja) 1995-07-10 2005-07-13 ローム株式会社 データ保持回路、ならびにデータの書込みおよび読み出し方法
JPH09205181A (ja) * 1996-01-26 1997-08-05 Nec Corp 半導体装置
KR100218275B1 (ko) * 1997-05-09 1999-09-01 윤종용 벌크형 1트랜지스터 구조의 강유전체 메모리소자
US5907762A (en) * 1997-12-04 1999-05-25 Sharp Microelectronics Technology, Inc. Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing

Also Published As

Publication number Publication date
FR2772508A1 (fr) 1999-06-18
KR19990037396A (ko) 1999-05-25
US6191441B1 (en) 2001-02-20
KR100332511B1 (ko) 2002-10-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090630