FR2806100B1 - Dispositif et procede de cristallogenese - Google Patents
Dispositif et procede de cristallogeneseInfo
- Publication number
- FR2806100B1 FR2806100B1 FR0003118A FR0003118A FR2806100B1 FR 2806100 B1 FR2806100 B1 FR 2806100B1 FR 0003118 A FR0003118 A FR 0003118A FR 0003118 A FR0003118 A FR 0003118A FR 2806100 B1 FR2806100 B1 FR 2806100B1
- Authority
- FR
- France
- Prior art keywords
- cristallogenesis
- cristallogenesis device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003118A FR2806100B1 (fr) | 2000-03-10 | 2000-03-10 | Dispositif et procede de cristallogenese |
JP2001567831A JP2003527297A (ja) | 2000-03-10 | 2001-03-09 | 結晶成長装置及び方法 |
US10/204,402 US6652647B2 (en) | 2000-03-10 | 2001-03-09 | Crystal growth device and method |
EP01913972A EP1261760A1 (fr) | 2000-03-10 | 2001-03-09 | Dispositif et procede de cristallogenese |
PCT/FR2001/000708 WO2001068956A1 (fr) | 2000-03-10 | 2001-03-09 | Dispositif et procede de cristallogenese |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003118A FR2806100B1 (fr) | 2000-03-10 | 2000-03-10 | Dispositif et procede de cristallogenese |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2806100A1 FR2806100A1 (fr) | 2001-09-14 |
FR2806100B1 true FR2806100B1 (fr) | 2002-09-20 |
Family
ID=8847967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0003118A Expired - Fee Related FR2806100B1 (fr) | 2000-03-10 | 2000-03-10 | Dispositif et procede de cristallogenese |
Country Status (5)
Country | Link |
---|---|
US (1) | US6652647B2 (fr) |
EP (1) | EP1261760A1 (fr) |
JP (1) | JP2003527297A (fr) |
FR (1) | FR2806100B1 (fr) |
WO (1) | WO2001068956A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2865740B1 (fr) * | 2004-01-30 | 2007-06-22 | Centre Nat Rech Scient | Procede et dispositif de fabrication de monocristaux |
KR100712139B1 (ko) | 2006-05-01 | 2007-05-09 | 임항준 | 브릿지만 공정을 이용한 단결정 생성장치 및 생성방법 |
FR2927910B1 (fr) * | 2008-02-27 | 2011-06-17 | Centre Nat Rech Scient | Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu. |
US9109299B1 (en) * | 2011-03-30 | 2015-08-18 | CapeSym, Inc. | Solidification of high quality alloy semiconductors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4764350A (en) * | 1986-10-08 | 1988-08-16 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for synthesizing a single crystal of indium phosphide |
US5037621A (en) * | 1989-11-09 | 1991-08-06 | The United States Of America As Represented By The Secretary Of The Army | System for the in-situ visualization of a solid liquid interface during crystal growth |
JPH0686350B2 (ja) * | 1990-06-08 | 1994-11-02 | 株式会社ジャパンエナジー | 結晶成長装置 |
FR2689524B1 (fr) * | 1992-04-06 | 1994-05-13 | Alcatel Alsthom Cie Gle Electric | Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique. |
FR2757184B1 (fr) * | 1996-12-12 | 1999-02-26 | Commissariat Energie Atomique | Dispositif et procede de cristallogenese |
DE69934643T2 (de) * | 1998-03-31 | 2007-10-25 | Nippon Mining & Metals Co., Ltd. | Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung |
JP3631063B2 (ja) * | 1998-10-21 | 2005-03-23 | キヤノン株式会社 | フッ化物の精製方法及びフッ化物結晶の製造方法 |
US6210605B1 (en) * | 1999-07-26 | 2001-04-03 | General Electric Company | Mn2+ activated green emitting SrAL12O19 luminiscent material |
-
2000
- 2000-03-10 FR FR0003118A patent/FR2806100B1/fr not_active Expired - Fee Related
-
2001
- 2001-03-09 WO PCT/FR2001/000708 patent/WO2001068956A1/fr active Application Filing
- 2001-03-09 US US10/204,402 patent/US6652647B2/en not_active Expired - Fee Related
- 2001-03-09 EP EP01913972A patent/EP1261760A1/fr not_active Withdrawn
- 2001-03-09 JP JP2001567831A patent/JP2003527297A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US6652647B2 (en) | 2003-11-25 |
FR2806100A1 (fr) | 2001-09-14 |
WO2001068956A1 (fr) | 2001-09-20 |
JP2003527297A (ja) | 2003-09-16 |
US20030019421A1 (en) | 2003-01-30 |
EP1261760A1 (fr) | 2002-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20081125 |