FR2806100B1 - Dispositif et procede de cristallogenese - Google Patents

Dispositif et procede de cristallogenese

Info

Publication number
FR2806100B1
FR2806100B1 FR0003118A FR0003118A FR2806100B1 FR 2806100 B1 FR2806100 B1 FR 2806100B1 FR 0003118 A FR0003118 A FR 0003118A FR 0003118 A FR0003118 A FR 0003118A FR 2806100 B1 FR2806100 B1 FR 2806100B1
Authority
FR
France
Prior art keywords
cristallogenesis
cristallogenesis device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0003118A
Other languages
English (en)
Other versions
FR2806100A1 (fr
Inventor
Thierry Duffar
Pierre Dusserre
Nathalie Giacometti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0003118A priority Critical patent/FR2806100B1/fr
Priority to JP2001567831A priority patent/JP2003527297A/ja
Priority to US10/204,402 priority patent/US6652647B2/en
Priority to EP01913972A priority patent/EP1261760A1/fr
Priority to PCT/FR2001/000708 priority patent/WO2001068956A1/fr
Publication of FR2806100A1 publication Critical patent/FR2806100A1/fr
Application granted granted Critical
Publication of FR2806100B1 publication Critical patent/FR2806100B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR0003118A 2000-03-10 2000-03-10 Dispositif et procede de cristallogenese Expired - Fee Related FR2806100B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0003118A FR2806100B1 (fr) 2000-03-10 2000-03-10 Dispositif et procede de cristallogenese
JP2001567831A JP2003527297A (ja) 2000-03-10 2001-03-09 結晶成長装置及び方法
US10/204,402 US6652647B2 (en) 2000-03-10 2001-03-09 Crystal growth device and method
EP01913972A EP1261760A1 (fr) 2000-03-10 2001-03-09 Dispositif et procede de cristallogenese
PCT/FR2001/000708 WO2001068956A1 (fr) 2000-03-10 2001-03-09 Dispositif et procede de cristallogenese

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0003118A FR2806100B1 (fr) 2000-03-10 2000-03-10 Dispositif et procede de cristallogenese

Publications (2)

Publication Number Publication Date
FR2806100A1 FR2806100A1 (fr) 2001-09-14
FR2806100B1 true FR2806100B1 (fr) 2002-09-20

Family

ID=8847967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0003118A Expired - Fee Related FR2806100B1 (fr) 2000-03-10 2000-03-10 Dispositif et procede de cristallogenese

Country Status (5)

Country Link
US (1) US6652647B2 (fr)
EP (1) EP1261760A1 (fr)
JP (1) JP2003527297A (fr)
FR (1) FR2806100B1 (fr)
WO (1) WO2001068956A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2865740B1 (fr) * 2004-01-30 2007-06-22 Centre Nat Rech Scient Procede et dispositif de fabrication de monocristaux
KR100712139B1 (ko) 2006-05-01 2007-05-09 임항준 브릿지만 공정을 이용한 단결정 생성장치 및 생성방법
FR2927910B1 (fr) * 2008-02-27 2011-06-17 Centre Nat Rech Scient Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.
US9109299B1 (en) * 2011-03-30 2015-08-18 CapeSym, Inc. Solidification of high quality alloy semiconductors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
US5037621A (en) * 1989-11-09 1991-08-06 The United States Of America As Represented By The Secretary Of The Army System for the in-situ visualization of a solid liquid interface during crystal growth
JPH0686350B2 (ja) * 1990-06-08 1994-11-02 株式会社ジャパンエナジー 結晶成長装置
FR2689524B1 (fr) * 1992-04-06 1994-05-13 Alcatel Alsthom Cie Gle Electric Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique.
FR2757184B1 (fr) * 1996-12-12 1999-02-26 Commissariat Energie Atomique Dispositif et procede de cristallogenese
DE69934643T2 (de) * 1998-03-31 2007-10-25 Nippon Mining & Metals Co., Ltd. Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung
JP3631063B2 (ja) * 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
US6210605B1 (en) * 1999-07-26 2001-04-03 General Electric Company Mn2+ activated green emitting SrAL12O19 luminiscent material

Also Published As

Publication number Publication date
US6652647B2 (en) 2003-11-25
FR2806100A1 (fr) 2001-09-14
WO2001068956A1 (fr) 2001-09-20
JP2003527297A (ja) 2003-09-16
US20030019421A1 (en) 2003-01-30
EP1261760A1 (fr) 2002-12-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20081125