FR2927910B1 - Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu. - Google Patents

Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.

Info

Publication number
FR2927910B1
FR2927910B1 FR0851259A FR0851259A FR2927910B1 FR 2927910 B1 FR2927910 B1 FR 2927910B1 FR 0851259 A FR0851259 A FR 0851259A FR 0851259 A FR0851259 A FR 0851259A FR 2927910 B1 FR2927910 B1 FR 2927910B1
Authority
FR
France
Prior art keywords
crystallogenizing
electrically conductive
molded material
conductive molded
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0851259A
Other languages
English (en)
Other versions
FR2927910A1 (fr
Inventor
Thierry Duffar
Gilbert Vian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0851259A priority Critical patent/FR2927910B1/fr
Priority to EP09715571A priority patent/EP2262932A1/fr
Priority to PCT/EP2009/052393 priority patent/WO2009106625A1/fr
Priority to US12/919,934 priority patent/US9493889B2/en
Priority to JP2010548128A priority patent/JP5777888B2/ja
Publication of FR2927910A1 publication Critical patent/FR2927910A1/fr
Application granted granted Critical
Publication of FR2927910B1 publication Critical patent/FR2927910B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0851259A 2008-02-27 2008-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu. Expired - Fee Related FR2927910B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0851259A FR2927910B1 (fr) 2008-02-27 2008-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.
EP09715571A EP2262932A1 (fr) 2008-02-27 2009-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu
PCT/EP2009/052393 WO2009106625A1 (fr) 2008-02-27 2009-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu
US12/919,934 US9493889B2 (en) 2008-02-27 2009-02-27 Method for the crystallogenesis of a material electrically conducting in the molten state
JP2010548128A JP5777888B2 (ja) 2008-02-27 2009-02-27 溶融状態における導電性材料の結晶生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0851259A FR2927910B1 (fr) 2008-02-27 2008-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.

Publications (2)

Publication Number Publication Date
FR2927910A1 FR2927910A1 (fr) 2009-08-28
FR2927910B1 true FR2927910B1 (fr) 2011-06-17

Family

ID=39495171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0851259A Expired - Fee Related FR2927910B1 (fr) 2008-02-27 2008-02-27 Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.

Country Status (5)

Country Link
US (1) US9493889B2 (fr)
EP (1) EP2262932A1 (fr)
JP (1) JP5777888B2 (fr)
FR (1) FR2927910B1 (fr)
WO (1) WO2009106625A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010048602A1 (de) * 2010-10-15 2012-04-19 Centrotherm Sitec Gmbh Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel
US9587324B2 (en) 2014-05-12 2017-03-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for processing a melt

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
FR2630459B1 (fr) 1988-04-20 1994-04-29 Commissariat Energie Atomique Procede et creuset de solidification de materiaux, et application a la cristallogenese de semi-conducteurs
US5047113A (en) * 1989-08-23 1991-09-10 Aleksandar Ostrogorsky Method for directional solidification of single crystals
JPH06234590A (ja) * 1993-02-09 1994-08-23 Furukawa Electric Co Ltd:The 化合物半導体単結晶の製造方法とその装置
FR2712608B1 (fr) 1993-11-16 1996-01-12 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.
FR2742488A1 (fr) 1995-12-19 1997-06-20 Commissariat Energie Atomique Dispositif de deplacement d'un liquide notamment dans des conditions de gravite reduite
FR2747173B1 (fr) 1996-04-03 1998-04-30 Commissariat Energie Atomique Dispositif de traversee etanche d'une cloison par un organe mobile
FR2757184B1 (fr) 1996-12-12 1999-02-26 Commissariat Energie Atomique Dispositif et procede de cristallogenese
FR2762021B1 (fr) 1997-04-09 1999-06-11 Commissariat Energie Atomique Dispositif de cristallogenese a piston
EP1088912A1 (fr) 1999-09-28 2001-04-04 Forschungsverbund Berlin e.V. Croissance en solution dans une zone flottante de cristaux d'un composé ou d'un alliage
FR2806100B1 (fr) 2000-03-10 2002-09-20 Commissariat Energie Atomique Dispositif et procede de cristallogenese
FR2810342B1 (fr) 2000-06-20 2002-11-29 Commissariat Energie Atomique Procede de cristallogenese avec champ magnetique
US6849121B1 (en) * 2001-04-24 2005-02-01 The United States Of America As Represented By The Secretary Of The Air Force Growth of uniform crystals
DE10349339A1 (de) * 2003-10-23 2005-06-16 Crystal Growing Systems Gmbh Kristallzüchtungsanlage
FR2865740B1 (fr) 2004-01-30 2007-06-22 Centre Nat Rech Scient Procede et dispositif de fabrication de monocristaux
JP2006008483A (ja) * 2004-06-29 2006-01-12 Sharp Corp 薄板製造装置
JP4294576B2 (ja) * 2004-11-17 2009-07-15 シャープ株式会社 薄板生成装置および薄板生成方法

Also Published As

Publication number Publication date
JP5777888B2 (ja) 2015-09-09
WO2009106625A1 (fr) 2009-09-03
US9493889B2 (en) 2016-11-15
US20110000424A1 (en) 2011-01-06
EP2262932A1 (fr) 2010-12-22
JP2011513168A (ja) 2011-04-28
FR2927910A1 (fr) 2009-08-28

Similar Documents

Publication Publication Date Title
FR2962050B1 (fr) Procede de fonctionnement d'une membrane ceramique conductrice ionique mixte
FR2943175B1 (fr) Procede de fabrication d'une unite electronique et l'unite electronique obtenue
IL199769A0 (en) Method for the production of structured, electrically conductive surfaces
EP2239743A4 (fr) Procédé de production d'un matériau conducteur, matériau conducteur obtenu grâce au procédé, dispositif électronique contenant le matériau conducteur, dispositif électroluminescent, et procédé de fabrication d'un dispositif électroluminescent
EP2031683A4 (fr) Matériau d'électrode
GB0710949D0 (en) A method for analysing the structure of an electrically conductive object
BRPI0815036A2 (pt) Método de produção de proteína heterogêneas
EP1978798A4 (fr) Matériau de garniture électroconducteur
BRPI0904327A2 (pt) Material de eletrólito sólido de sulfeto.
DE602006016683D1 (de) Tonerherstellungsverfahren
EP2041758A4 (fr) Élément électrique conducteur
FR2937647B1 (fr) Procede d'obtention de biokerosene
PL386026A1 (pl) Sposób wytwarzania escitalopramu
EP2224234A4 (fr) Electrode selective d'ions
FR2925320B1 (fr) Procede de maquillage des levres.
PL2108065T3 (pl) Sposób wytwarzania kształtek z białek z cieczami jonowymi
FR2957458B1 (fr) Procede de realisation d'une electrode conductrice
BRPI1014932A2 (pt) método de compactação de material.
BRPI0914365A2 (pt) ''método de produção de fluoropropeno''
FR2947571B1 (fr) Procede de restauration d'un element en cuivre
FR2927910B1 (fr) Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu.
FR2929284B1 (fr) Materiaux carbones issus de latex
ZA201001174B (en) Calcium ruthenate electrode materials
GB2462693B (en) Forming electrically insulative regions
FR2941159B1 (fr) Procede de depot d'un materiau a la surface d'un objet.

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

ST Notification of lapse

Effective date: 20191006