JP5777888B2 - 溶融状態における導電性材料の結晶生成方法 - Google Patents
溶融状態における導電性材料の結晶生成方法 Download PDFInfo
- Publication number
- JP5777888B2 JP5777888B2 JP2010548128A JP2010548128A JP5777888B2 JP 5777888 B2 JP5777888 B2 JP 5777888B2 JP 2010548128 A JP2010548128 A JP 2010548128A JP 2010548128 A JP2010548128 A JP 2010548128A JP 5777888 B2 JP5777888 B2 JP 5777888B2
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- JP
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- Prior art keywords
- piston
- temperature
- crucible
- electromagnetic
- liquid
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
−結晶中に亀裂が存在しないこと、
−半径方向の均質性、
−縦方向の均質性、
−結晶化または引出速度(mm/hで表した)
が有益である。
−該溶融された材料を、液体−固体界面が形成されるように、低下していく温度に徐々にさらし、
−該材料の該液体−固体界面の平面性を制御し、
−該溶融された材料を、凝固の前およびその間に、電磁混練に付することからなり、
該電磁混練が、交番磁界を印加することにより、該材料中に電流の流れを引き起こさずに得られる、方法が提供される。
−該溶融された材料を冷却する手段と、
−該材料の該液体−固体界面の平面性を制御する手段と、
−該溶融された材料の電磁混練を発生する手段と
を備えてなり、
該電磁混練を発生する手段が、該材料中に交番磁界を発生する手段を備えてなる、装置に関する。
−平らな下側面を有し、温度が制御されるピストンと、
−該ピストンの該下側面を、該材料の該液体−固体界面から所定の距離に維持する手段とを備えてなるのが有利である。
−るつぼ中に含まれる溶融された材料を電磁混練に付すること、および
−該溶融された材料中に、制御された温度に維持したピストンを、該液体−固体界面から一定の距離に押し込むこと
により、驚くべきことに、これらの各方法における最良の結果を単に積み重ねることにより予想される結果より、明らかに優れた結果が得られることを見出した。
装置は、るつぼが中で平行移動することができる標準的なBridgman加熱炉を含んでなり、その加熱炉に電磁インダクタおよび温度制御されるピストンが加えられる。
方法の説明
実験結果
発明の可能な用途
−マイクロ−エレクトロニクスにおける用途向けのゲルマニウムおよびシリコンの二元合金、
−高速エレクトロニクスおよびオプトエレクトロニクスにおける用途向けのIII−V族の、すなわち、アンチモン化物(GaSb、AlSbおよびInSb)、ヒ化物(GaAsおよびInAs)またはリン化物(GaPおよびInP)を基材とする三元合金、
−ガンマ、X、UV、可視およびIR放射線の全域用検出器の分野における用途向けのII−IV族の、テルル化物(CdTe、ZnTe、HgTe)またはセレン化物(CdSeまたはZnSe)を基材とする三元合金
に適用される。
Claims (5)
- るつぼ(1)中で導電性材料の溶融体から引き出すことによる、溶融状態における導電性材料の結晶生成方法であって、
−溶融された材料を、液体−固体界面が形成されるように、低下していく温度に徐々にさらし、
−温度が制御されたピストン(3)を、前記界面から所定の距離(h)保持することにより、前記材料の前記液体−固体界面の平面性を制御し、
−前記溶融された材料を、凝固の前およびその間に、電磁混練に付することからなり、 前記電磁混練が交番磁界を印加することにより得られることを特徴とする、方法。 - 前記ピストン(3)の温度が、前記材料の融解温度に、前記材料中の熱勾配と前記界面から前記ピストンまでの距離との積を加えた値±10℃に等しいことを特徴とする、請求項1に記載の方法。
- 前記交番磁界は、強度が1〜10mTであり、周波数が1,000〜10000Hzであることを特徴とする、請求項1または2に記載の方法。
- るつぼ(1)中で導電性材料の溶融体から引き出すことによる、溶融状態における導電性材料の結晶生成のための装置であって、
−溶融された材料を冷却する手段と、
−前記材料の液体−固体界面の平面性を制御する手段であって、平らな下側面を有するピストンであって、その温度が制御されるピストン(3)および前記ピストンの前記下側面を、前記材料の前記液体−固体界面から所定の距離(h)に維持する手段とを含む手段と、
−前記溶融された材料の電磁混練を発生する手段(2)と
を備えてなり、
前記電磁混練を発生する手段が、前記材料中に交番磁界を発生する手段を備えてなることを特徴とする、装置。 - 前記電磁混練を発生する手段が、電磁コイル(2)および前記コイル中に交番電流の流れを引き起こす手段を備えてなることを特徴とする、請求項4に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0851259A FR2927910B1 (fr) | 2008-02-27 | 2008-02-27 | Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu. |
FR0851259 | 2008-02-27 | ||
PCT/EP2009/052393 WO2009106625A1 (fr) | 2008-02-27 | 2009-02-27 | Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011513168A JP2011513168A (ja) | 2011-04-28 |
JP5777888B2 true JP5777888B2 (ja) | 2015-09-09 |
Family
ID=39495171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010548128A Expired - Fee Related JP5777888B2 (ja) | 2008-02-27 | 2009-02-27 | 溶融状態における導電性材料の結晶生成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9493889B2 (ja) |
EP (1) | EP2262932A1 (ja) |
JP (1) | JP5777888B2 (ja) |
FR (1) | FR2927910B1 (ja) |
WO (1) | WO2009106625A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010048602A1 (de) * | 2010-10-15 | 2012-04-19 | Centrotherm Sitec Gmbh | Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel |
US9587324B2 (en) | 2014-05-12 | 2017-03-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for processing a melt |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3096158A (en) | 1959-09-25 | 1963-07-02 | Gerthart K Gaule | Apparatus for pulling single crystals in the form of long flat strips from a melt |
FR2630459B1 (fr) | 1988-04-20 | 1994-04-29 | Commissariat Energie Atomique | Procede et creuset de solidification de materiaux, et application a la cristallogenese de semi-conducteurs |
US5047113A (en) * | 1989-08-23 | 1991-09-10 | Aleksandar Ostrogorsky | Method for directional solidification of single crystals |
JPH06234590A (ja) | 1993-02-09 | 1994-08-23 | Furukawa Electric Co Ltd:The | 化合物半導体単結晶の製造方法とその装置 |
FR2712608B1 (fr) | 1993-11-16 | 1996-01-12 | Commissariat Energie Atomique | Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu. |
FR2742488A1 (fr) | 1995-12-19 | 1997-06-20 | Commissariat Energie Atomique | Dispositif de deplacement d'un liquide notamment dans des conditions de gravite reduite |
FR2747173B1 (fr) | 1996-04-03 | 1998-04-30 | Commissariat Energie Atomique | Dispositif de traversee etanche d'une cloison par un organe mobile |
FR2757184B1 (fr) | 1996-12-12 | 1999-02-26 | Commissariat Energie Atomique | Dispositif et procede de cristallogenese |
FR2762021B1 (fr) | 1997-04-09 | 1999-06-11 | Commissariat Energie Atomique | Dispositif de cristallogenese a piston |
EP1088912A1 (fr) | 1999-09-28 | 2001-04-04 | Forschungsverbund Berlin e.V. | Croissance en solution dans une zone flottante de cristaux d'un composé ou d'un alliage |
FR2806100B1 (fr) | 2000-03-10 | 2002-09-20 | Commissariat Energie Atomique | Dispositif et procede de cristallogenese |
FR2810342B1 (fr) | 2000-06-20 | 2002-11-29 | Commissariat Energie Atomique | Procede de cristallogenese avec champ magnetique |
US6849121B1 (en) * | 2001-04-24 | 2005-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Growth of uniform crystals |
DE10349339A1 (de) * | 2003-10-23 | 2005-06-16 | Crystal Growing Systems Gmbh | Kristallzüchtungsanlage |
FR2865740B1 (fr) * | 2004-01-30 | 2007-06-22 | Centre Nat Rech Scient | Procede et dispositif de fabrication de monocristaux |
JP2006008483A (ja) * | 2004-06-29 | 2006-01-12 | Sharp Corp | 薄板製造装置 |
JP4294576B2 (ja) * | 2004-11-17 | 2009-07-15 | シャープ株式会社 | 薄板生成装置および薄板生成方法 |
-
2008
- 2008-02-27 FR FR0851259A patent/FR2927910B1/fr not_active Expired - Fee Related
-
2009
- 2009-02-27 EP EP09715571A patent/EP2262932A1/fr not_active Ceased
- 2009-02-27 US US12/919,934 patent/US9493889B2/en not_active Expired - Fee Related
- 2009-02-27 WO PCT/EP2009/052393 patent/WO2009106625A1/fr active Application Filing
- 2009-02-27 JP JP2010548128A patent/JP5777888B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9493889B2 (en) | 2016-11-15 |
WO2009106625A1 (fr) | 2009-09-03 |
FR2927910B1 (fr) | 2011-06-17 |
JP2011513168A (ja) | 2011-04-28 |
FR2927910A1 (fr) | 2009-08-28 |
US20110000424A1 (en) | 2011-01-06 |
EP2262932A1 (fr) | 2010-12-22 |
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