FR2856508B1 - Dispositif de memoire magnetique - Google Patents

Dispositif de memoire magnetique

Info

Publication number
FR2856508B1
FR2856508B1 FR0406159A FR0406159A FR2856508B1 FR 2856508 B1 FR2856508 B1 FR 2856508B1 FR 0406159 A FR0406159 A FR 0406159A FR 0406159 A FR0406159 A FR 0406159A FR 2856508 B1 FR2856508 B1 FR 2856508B1
Authority
FR
France
Prior art keywords
memory device
magnetic memory
magnetic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0406159A
Other languages
English (en)
Other versions
FR2856508A1 (fr
Inventor
Thomas C Anthony
Frederick A Perner
Manoj K Bhattacharyya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Publication of FR2856508A1 publication Critical patent/FR2856508A1/fr
Application granted granted Critical
Publication of FR2856508B1 publication Critical patent/FR2856508B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
FR0406159A 2003-06-23 2004-06-08 Dispositif de memoire magnetique Expired - Fee Related FR2856508B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/601,895 US6865107B2 (en) 2003-06-23 2003-06-23 Magnetic memory device

Publications (2)

Publication Number Publication Date
FR2856508A1 FR2856508A1 (fr) 2004-12-24
FR2856508B1 true FR2856508B1 (fr) 2006-07-07

Family

ID=33490820

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0406159A Expired - Fee Related FR2856508B1 (fr) 2003-06-23 2004-06-08 Dispositif de memoire magnetique

Country Status (3)

Country Link
US (1) US6865107B2 (fr)
KR (1) KR101059875B1 (fr)
FR (1) FR2856508B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6944053B2 (en) * 2003-06-17 2005-09-13 Hewlett-Packard Development Company, L.P. Magnetic memory with structure providing reduced coercivity
US7033881B2 (en) * 2004-06-15 2006-04-25 International Business Machines Corporation Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
US7927990B2 (en) * 2007-06-29 2011-04-19 Sandisk Corporation Forming complimentary metal features using conformal insulator layer
JP5299643B2 (ja) * 2008-02-19 2013-09-25 日本電気株式会社 磁気ランダムアクセスメモリ
US20110076784A1 (en) * 2009-09-29 2011-03-31 Grandis Inc. Fabrication of Magnetic Element Arrays
US20110173462A1 (en) * 2010-01-11 2011-07-14 Apple Inc. Controlling and staggering operations to limit current spikes
WO2015195416A1 (fr) * 2014-06-18 2015-12-23 Crocus Technology Inc. Configuration de sangle permettant de réduire la contrainte mécanique appliquée à des dispositifs sensibles aux contraintes
KR20160070244A (ko) * 2014-12-09 2016-06-20 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190775A (ja) 1985-02-20 1986-08-25 Fujitsu Ltd 磁気バブルメモリ素子
US5039655A (en) 1989-07-28 1991-08-13 Ampex Corporation Thin film memory device having superconductor keeper for eliminating magnetic domain creep
US5956267A (en) 1997-12-18 1999-09-21 Honeywell Inc Self-aligned wordline keeper and method of manufacture therefor
US6211559B1 (en) * 1998-02-27 2001-04-03 Motorola, Inc. Symmetric magnetic tunnel device
TW454187B (en) 1998-09-30 2001-09-11 Siemens Ag Magnetoresistive memory with low current density
US6108177A (en) * 1998-11-19 2000-08-22 International Business Machines Corporation Tunnel junction structure with FeX ferromagnetic layers
US6153443A (en) 1998-12-21 2000-11-28 Motorola, Inc. Method of fabricating a magnetic random access memory
US6165803A (en) 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP4309075B2 (ja) * 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
TW459374B (en) 2000-08-30 2001-10-11 Mosel Vitelic Inc Method for forming magnetic layer of magnetic random access memory
US6452253B1 (en) 2000-08-31 2002-09-17 Micron Technology, Inc. Method and apparatus for magnetic shielding of an integrated circuit
US6590803B2 (en) * 2001-03-27 2003-07-08 Kabushiki Kaisha Toshiba Magnetic memory device
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6775183B2 (en) * 2002-10-22 2004-08-10 Btg International Ltd. Magnetic memory device employing giant magnetoresistance effect
JP3866649B2 (ja) * 2002-11-28 2007-01-10 株式会社東芝 磁気ランダムアクセスメモリ

Also Published As

Publication number Publication date
KR20050000325A (ko) 2005-01-03
KR101059875B1 (ko) 2011-08-29
US20040257870A1 (en) 2004-12-23
FR2856508A1 (fr) 2004-12-24
US6865107B2 (en) 2005-03-08

Similar Documents

Publication Publication Date Title
DE602004023162D1 (de) Speicherkarte
SE0200073D0 (sv) Delayed memory device
FR2855076B1 (fr) Dispositif microfluidique
DE60210416D1 (de) Speicherkarte
DE602004009385D1 (de) Spurhaltevorrichtung
DE602004002713D1 (de) Radarvorrichtung
DE602004027280D1 (de) Kartenverarbeitungseinrichtung
FR2848128B1 (fr) Dispositif de desembouage magnetique
DE602004002232D1 (de) Elektronisches Gerät
FR2857497B1 (fr) Dispositif a memoire a circuit integre
DE602004024638D1 (de) Bildaufnahmevorrichtung
DE602004015051D1 (de) Elektronisches Gerät
DE602004014238D1 (de) Empfangsvorrichtung
DE60305752D1 (de) SpeicherKarte
FR2859430B1 (fr) Dispositif de determination de collision
FR2853874B1 (fr) Dispositif de blocage de direction
DE602004013310D1 (de) Kartenverarbeitungseinrichtung
FR2858661B1 (fr) Dispositif de post-combustion
FR2856508B1 (fr) Dispositif de memoire magnetique
DE602004031976D1 (de) Informationsbereitstellungsvorrichtung
DE502004000507D1 (de) Spanneinrichtung
FR2855871B1 (fr) Dispositif de regrigeration
FR2867892B3 (fr) Module memoire
DE602004007208D1 (de) Speichervorrichtung mit ultrahoher Datendichte
FR2853365B1 (fr) Dispositif de ventilation

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20090228