DE60137403D1 - Datenspeicheranordnung - Google Patents

Datenspeicheranordnung

Info

Publication number
DE60137403D1
DE60137403D1 DE60137403T DE60137403T DE60137403D1 DE 60137403 D1 DE60137403 D1 DE 60137403D1 DE 60137403 T DE60137403 T DE 60137403T DE 60137403 T DE60137403 T DE 60137403T DE 60137403 D1 DE60137403 D1 DE 60137403D1
Authority
DE
Germany
Prior art keywords
storage device
data storage
data
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60137403T
Other languages
English (en)
Inventor
Lung T Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60137403D1 publication Critical patent/DE60137403D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
DE60137403T 2001-01-29 2001-12-19 Datenspeicheranordnung Expired - Lifetime DE60137403D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/771,857 US6356477B1 (en) 2001-01-29 2001-01-29 Cross point memory array including shared devices for blocking sneak path currents

Publications (1)

Publication Number Publication Date
DE60137403D1 true DE60137403D1 (de) 2009-03-05

Family

ID=25093157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60137403T Expired - Lifetime DE60137403D1 (de) 2001-01-29 2001-12-19 Datenspeicheranordnung

Country Status (8)

Country Link
US (1) US6356477B1 (de)
EP (1) EP1227495B1 (de)
JP (1) JP4474087B2 (de)
KR (1) KR100878306B1 (de)
CN (1) CN1213453C (de)
DE (1) DE60137403D1 (de)
HK (1) HK1048703B (de)
TW (1) TW520498B (de)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
DE60205569T2 (de) * 2001-12-21 2006-05-18 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
EP1321944B1 (de) 2001-12-21 2008-07-30 Kabushiki Kaisha Toshiba Magnetischer Direktzugriffsspeicher
US6570440B1 (en) * 2001-12-24 2003-05-27 Intel Corporation Direct-timed sneak current cancellation
US6597598B1 (en) 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6574129B1 (en) * 2002-04-30 2003-06-03 Hewlett-Packard Development Company, L.P. Resistive cross point memory cell arrays having a cross-couple latch sense amplifier
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
WO2003098636A2 (en) 2002-05-16 2003-11-27 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US7042749B2 (en) 2002-05-16 2006-05-09 Micron Technology, Inc. Stacked 1T-nmemory cell structure
US6780653B2 (en) 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6870758B2 (en) * 2002-10-30 2005-03-22 Hewlett-Packard Development Company, L.P. Magnetic memory device and methods for making same
JP3766380B2 (ja) * 2002-12-25 2006-04-12 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
JP2004213771A (ja) * 2002-12-27 2004-07-29 Toshiba Corp 磁気ランダムアクセスメモリ
US7233024B2 (en) * 2003-03-31 2007-06-19 Sandisk 3D Llc Three-dimensional memory device incorporating segmented bit line memory array
US6822903B2 (en) * 2003-03-31 2004-11-23 Matrix Semiconductor, Inc. Apparatus and method for disturb-free programming of passive element memory cells
US6879505B2 (en) * 2003-03-31 2005-04-12 Matrix Semiconductor, Inc. Word line arrangement having multi-layer word line segments for three-dimensional memory array
US7245520B2 (en) * 2004-08-13 2007-07-17 Nantero, Inc. Random access memory including nanotube switching elements
JP3836823B2 (ja) * 2003-08-25 2006-10-25 株式会社東芝 半導体集積回路装置
US7084446B2 (en) * 2003-08-25 2006-08-01 Intel Corporation Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
US6937509B2 (en) * 2003-09-08 2005-08-30 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
US7136300B2 (en) * 2003-10-06 2006-11-14 Hewlett-Packard Development Company, Lp. Magnetic memory device including groups of series-connected memory elements
US6985389B2 (en) * 2003-10-27 2006-01-10 Stmicroelectronics, Inc. Phase change based memory device and method for operating same
US6947333B2 (en) * 2003-10-30 2005-09-20 Hewlett-Packard Development Company, L.P. Memory device
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US20060171200A1 (en) * 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7203129B2 (en) * 2004-02-16 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Segmented MRAM memory array
KR100593607B1 (ko) * 2004-05-13 2006-06-28 학교법인 동국대학교 강유전 반도체 물질을 포함하는 비휘발성 반도체 메모리소자 및 그 반도체 메모리 소자의 데이터 기입, 소거 및판독 방법
US7221584B2 (en) * 2004-08-13 2007-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM cell having shared configuration
WO2006041430A1 (en) * 2004-09-17 2006-04-20 Hewlett-Packard Development Company, L.P. Data storage device and method of forming the same
EP1792149B1 (de) * 2004-09-22 2010-03-31 Nantero, Inc. Direktzugriffsspeicher mit nanoröhrenschaltelementen
JP2006127583A (ja) * 2004-10-26 2006-05-18 Elpida Memory Inc 不揮発性半導体記憶装置及び相変化メモリ
US7054219B1 (en) 2005-03-31 2006-05-30 Matrix Semiconductor, Inc. Transistor layout configuration for tight-pitched memory array lines
US7272052B2 (en) * 2005-03-31 2007-09-18 Sandisk 3D Llc Decoding circuit for non-binary groups of memory line drivers
US7142471B2 (en) * 2005-03-31 2006-11-28 Sandisk 3D Llc Method and apparatus for incorporating block redundancy in a memory array
US7359279B2 (en) * 2005-03-31 2008-04-15 Sandisk 3D Llc Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture
US7680170B2 (en) * 2006-06-15 2010-03-16 Oclaro Photonics, Inc. Coupling devices and methods for stacked laser emitter arrays
US20080079047A1 (en) * 2006-09-29 2008-04-03 Joerg Dietrich Schmid Memory device and method of reading/writing data from/into a memory device
US7447062B2 (en) * 2007-03-15 2008-11-04 International Business Machines Corproation Method and structure for increasing effective transistor width in memory arrays with dual bitlines
US8487450B2 (en) * 2007-05-01 2013-07-16 Micron Technology, Inc. Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems
US8987702B2 (en) * 2007-05-01 2015-03-24 Micron Technology, Inc. Selectively conducting devices, diode constructions, constructions, and diode forming methods
JP5216254B2 (ja) * 2007-06-22 2013-06-19 株式会社船井電機新応用技術研究所 メモリ素子アレイ
US8289662B2 (en) * 2008-05-20 2012-10-16 International Business Machines Corporation Tunnel junction resistor for high resistance devices and systems using the same
US8120951B2 (en) 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
US8134194B2 (en) 2008-05-22 2012-03-13 Micron Technology, Inc. Memory cells, memory cell constructions, and memory cell programming methods
US8154005B2 (en) 2008-06-13 2012-04-10 Sandisk 3D Llc Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
US8105867B2 (en) * 2008-11-18 2012-01-31 Sandisk 3D Llc Self-aligned three-dimensional non-volatile memory fabrication
US8120068B2 (en) 2008-12-24 2012-02-21 Sandisk 3D Llc Three-dimensional memory structures having shared pillar memory cells
US8270199B2 (en) 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
US8139391B2 (en) * 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
US8315079B2 (en) * 2010-10-07 2012-11-20 Crossbar, Inc. Circuit for concurrent read operation and method therefor
US8982647B2 (en) * 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
WO2016018328A1 (en) * 2014-07-31 2016-02-04 Hewlett-Packard Development Company, L.P. Crossbar arrays with shared drivers
US10672833B2 (en) 2017-07-26 2020-06-02 Micron Technology, Inc. Semiconductor devices including a passive material between memory cells and conductive access lines, and related electronic devices
US10739186B2 (en) * 2017-11-20 2020-08-11 Samsung Electronics Co., Ltd. Bi-directional weight cell

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866066A (en) * 1973-07-16 1975-02-11 Bell Telephone Labor Inc Power supply distribution for integrated circuits
FR2443743A1 (fr) * 1978-12-04 1980-07-04 Colburn William Dispositif electronique contenant une matiere composite et son procede de realisation
FR2595526A1 (fr) * 1986-03-07 1987-09-11 Centomo Jean Louis Dispositif antiviol de ligne telephonique
JPH04344383A (ja) * 1991-05-22 1992-11-30 Mitsubishi Electric Corp 磁性薄膜メモリおよびその読み出し方法
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
JP3450657B2 (ja) * 1997-07-16 2003-09-29 株式会社東芝 半導体記憶装置
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
US5936880A (en) * 1997-11-13 1999-08-10 Vlsi Technology, Inc. Bi-layer programmable resistor memory
US6130835A (en) * 1997-12-02 2000-10-10 International Business Machines Corporation Voltage biasing for magnetic RAM with magnetic tunnel memory cells
JP2000187976A (ja) * 1998-12-17 2000-07-04 Canon Inc 磁性薄膜メモリおよびその記録再生方法
US6055179A (en) * 1998-05-19 2000-04-25 Canon Kk Memory device utilizing giant magnetoresistance effect
US6097625A (en) 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6215707B1 (en) * 2000-04-10 2001-04-10 Motorola Inc. Charge conserving write method and system for an MRAM
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array

Also Published As

Publication number Publication date
US6356477B1 (en) 2002-03-12
CN1213453C (zh) 2005-08-03
HK1048703B (zh) 2006-03-17
CN1368752A (zh) 2002-09-11
EP1227495A2 (de) 2002-07-31
EP1227495B1 (de) 2009-01-14
KR20030010459A (ko) 2003-02-05
TW520498B (en) 2003-02-11
JP4474087B2 (ja) 2010-06-02
HK1048703A1 (en) 2003-04-11
JP2002304880A (ja) 2002-10-18
KR100878306B1 (ko) 2009-01-14
EP1227495A3 (de) 2003-02-19

Similar Documents

Publication Publication Date Title
DE60114359D1 (de) Datenspeicheranordnung
DE60137403D1 (de) Datenspeicheranordnung
EE200200200A (et) Portatiivne andmesalvestusseade
DK1367587T3 (da) Dataoptager
DE60236404D1 (de) Bildaufnahmegerät
DE60137843D1 (de) Tragbares informationsgerät
DE60222109D1 (de) Elektrizitätsspeichereinrichtung
DE60230101D1 (de) Speicherplattenanordnung- Steuerungsvorrichtung
DE60129183D1 (de) Datenverarbeitungsvorrichtung
DE60203675D1 (de) Magnetischer Datenspeicher
DE60301294D1 (de) Magnetspeichervorrichtungen
DE50208074D1 (de) Holographischer datenspeicher
DE60335283D1 (de) Bildaufnahmevorrichtung
DE50211318D1 (de) Ortungsgerät
DE60212721D1 (de) Datenkonservierung
DE60235782D1 (de) Informationsaufzeichnungsgerät
DE60220105D1 (de) Plattenspeichergerät
DE60126534D1 (de) Aufzeichnungsvorrichtung
DE60210053D1 (de) Platteneinrichtung
DE50003562D1 (de) Datenspeicher
DE602004012987D1 (de) Datenspeichersystem
DE60300360D1 (de) Informationsspeichervorrichtung
DE59912538D1 (de) Datenspeichereinrichtung
DE60301097D1 (de) Datenspeichervorrichtung
DE60329232D1 (de) Aufzeichnungsvorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition