DE60300360D1 - Informationsspeichervorrichtung - Google Patents

Informationsspeichervorrichtung

Info

Publication number
DE60300360D1
DE60300360D1 DE60300360T DE60300360T DE60300360D1 DE 60300360 D1 DE60300360 D1 DE 60300360D1 DE 60300360 T DE60300360 T DE 60300360T DE 60300360 T DE60300360 T DE 60300360T DE 60300360 D1 DE60300360 D1 DE 60300360D1
Authority
DE
Germany
Prior art keywords
storage device
information storage
information
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300360T
Other languages
English (en)
Other versions
DE60300360T2 (de
Inventor
Yoriharu Takai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60300360D1 publication Critical patent/DE60300360D1/de
Publication of DE60300360T2 publication Critical patent/DE60300360T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
DE60300360T 2002-03-20 2003-03-19 Informationsspeichervorrichtung Expired - Lifetime DE60300360T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002079299 2002-03-20
JP2002079299A JP2003280979A (ja) 2002-03-20 2002-03-20 情報記憶装置

Publications (2)

Publication Number Publication Date
DE60300360D1 true DE60300360D1 (de) 2005-04-14
DE60300360T2 DE60300360T2 (de) 2006-04-06

Family

ID=27785311

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300360T Expired - Lifetime DE60300360T2 (de) 2002-03-20 2003-03-19 Informationsspeichervorrichtung

Country Status (7)

Country Link
US (2) US7073015B2 (de)
EP (1) EP1347458B1 (de)
JP (1) JP2003280979A (de)
KR (1) KR100542175B1 (de)
CN (2) CN1242418C (de)
DE (1) DE60300360T2 (de)
TW (1) TW589531B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3928724B2 (ja) * 2003-02-20 2007-06-13 ソニー株式会社 記録媒体の記録制御方法および記録媒体の記録制御装置
CN100533409C (zh) * 2005-07-29 2009-08-26 松下电器产业株式会社 存储器控制器，非易失性存储设备，非易失性存储系统，和非易失性存储器地址管理方法
US20080133977A1 (en) * 2006-05-12 2008-06-05 Electronics And Telecommunications Research Institute Non-stop debugging apparatus for correcting errors in embedded systems and method thereof
US20090164715A1 (en) * 2007-12-20 2009-06-25 International Business Machines Corporation Protecting Against Stale Page Overlays
US8006707B2 (en) * 2008-01-29 2011-08-30 Hct Asia Ltd. Rotating dial sifter
US9582431B2 (en) 2010-03-22 2017-02-28 Seagate Technology Llc Storage address space to NVM address, span, and length mapping/converting
EP2559036A1 (de) 2010-04-15 2013-02-20 Ramot at Tel-Aviv University Ltd. Mehrfache programmierung eines flash-speichers ohne löschvorgang
JP5815212B2 (ja) * 2010-04-19 2015-11-17 スパンション エルエルシー データ書き込み方法およびシステム
KR20140057869A (ko) * 2012-11-05 2014-05-14 콘티넨탈 오토모티브 시스템 주식회사 차량용 임베디드 시스템의 데이터 제어 방법
CN103902468B (zh) * 2012-12-27 2018-02-23 华为技术有限公司 存储系统的数据清除方法和装置
CN111427517B (zh) * 2015-12-28 2025-02-21 华为技术有限公司 一种数据处理方法以及NVMe存储器
US11068165B2 (en) 2019-06-27 2021-07-20 Western Digital Technologies, Inc. Non-volatile memory data write management
CN113127377B (zh) * 2021-04-08 2022-11-25 武汉导航与位置服务工业技术研究院有限责任公司 一种非易失存储器件写擦除的磨损均衡方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
GB2291991A (en) * 1995-09-27 1996-02-07 Memory Corp Plc Disk drive emulation with a block-erasable memory
US5815434A (en) * 1995-09-29 1998-09-29 Intel Corporation Multiple writes per a single erase for a nonvolatile memory
US5745418A (en) 1996-11-25 1998-04-28 Macronix International Co., Ltd. Flash memory mass storage system
US5954818A (en) * 1997-02-03 1999-09-21 Intel Corporation Method of programming, erasing, and reading block lock-bits and a master lock-bit in a flash memory device
JP4073525B2 (ja) * 1997-09-05 2008-04-09 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3511916B2 (ja) 1998-11-17 2004-03-29 松下電器産業株式会社 記録再生装置
US6427186B1 (en) * 1999-03-30 2002-07-30 Frank (Fong-Long) Lin Memory, interface system and method for mapping logical block numbers to physical sector numbers in a flash memory, using a master index table and a table of physical sector numbers
US6965963B1 (en) * 1999-07-28 2005-11-15 Sony Corporation Continuous arrangement of data clusters across multiple storages
JP2002052416A (ja) 2000-08-07 2002-02-19 Daihatsu Motor Co Ltd ブランク材切出し方法及び装置
JP3573706B2 (ja) 2000-11-15 2004-10-06 富士通株式会社 記憶装置の書き込み／消去方法

Also Published As

Publication number Publication date
CN100485812C (zh) 2009-05-06
CN1832041A (zh) 2006-09-13
CN1242418C (zh) 2006-02-15
KR20030076359A (ko) 2003-09-26
CN1445789A (zh) 2003-10-01
EP1347458A1 (de) 2003-09-24
TW589531B (en) 2004-06-01
TW200305804A (en) 2003-11-01
EP1347458B1 (de) 2005-03-09
JP2003280979A (ja) 2003-10-03
DE60300360T2 (de) 2006-04-06
US7404030B2 (en) 2008-07-22
US20030182497A1 (en) 2003-09-25
US7073015B2 (en) 2006-07-04
US20060212647A1 (en) 2006-09-21
KR100542175B1 (ko) 2006-01-11

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Legal Events

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