DE68918880D1 - Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung. - Google Patents

Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung.

Info

Publication number
DE68918880D1
DE68918880D1 DE68918880T DE68918880T DE68918880D1 DE 68918880 D1 DE68918880 D1 DE 68918880D1 DE 68918880 T DE68918880 T DE 68918880T DE 68918880 T DE68918880 T DE 68918880T DE 68918880 D1 DE68918880 D1 DE 68918880D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
electrically erasable
volatile semiconductor
erasable non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918880T
Other languages
English (en)
Other versions
DE68918880T2 (de
Inventor
Sadayuki C O Patent D Yokoyama
Masamichi C O Patent Div Asano
Hiroshi C O Patent Di Iwahashi
Kaoru C O Patent Divi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68918880D1 publication Critical patent/DE68918880D1/de
Application granted granted Critical
Publication of DE68918880T2 publication Critical patent/DE68918880T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE68918880T 1988-01-28 1989-01-27 Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung. Expired - Fee Related DE68918880T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1826488A JPH0814991B2 (ja) 1988-01-28 1988-01-28 電気的消去可能不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE68918880D1 true DE68918880D1 (de) 1994-11-24
DE68918880T2 DE68918880T2 (de) 1995-02-23

Family

ID=11966811

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918880T Expired - Fee Related DE68918880T2 (de) 1988-01-28 1989-01-27 Elektrisch löschbare nichtflüchtige Halbleiterspeichervorrichtung.

Country Status (5)

Country Link
US (1) US4979146A (de)
EP (1) EP0328918B1 (de)
JP (1) JPH0814991B2 (de)
KR (1) KR960009031B1 (de)
DE (1) DE68918880T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239500A (en) * 1989-09-29 1993-08-24 Centre Suisse D'electronique Et De Microtechnique S.A. Process of storing analog quantities and device for the implementation thereof
JP2504599B2 (ja) * 1990-02-23 1996-06-05 株式会社東芝 不揮発性半導体記憶装置
JP2655441B2 (ja) * 1990-07-13 1997-09-17 日本電気株式会社 読み出し専用半導体記憶装置
JP2595781B2 (ja) * 1990-07-13 1997-04-02 日本電気株式会社 半導体記憶装置
US5291439A (en) * 1991-09-12 1994-03-01 International Business Machines Corporation Semiconductor memory cell and memory array with inversion layer
US5138576A (en) * 1991-11-06 1992-08-11 Altera Corporation Method and apparatus for erasing an array of electrically erasable EPROM cells
US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
EP0818788B1 (de) * 1993-05-28 2001-09-19 Macronix International Co., Ltd. Schneller Flash-EPROM-Programmierungs- und Vorprogrammierungsschaltungsentwurf
JP2892501B2 (ja) * 1993-05-28 1999-05-17 マクロニクス インターナショナル カンパニイ リミテッド 高速フラッシュｅｐｒｏｍプログラミング、プリプログラミング回路構造
EP1120792B1 (de) * 1993-05-28 2003-12-17 Macronix International Co., Ltd. Schneller Flash-EPROM-Programmierungs- und Vorprogrammierungsschaltungsentwurf
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
WO1996001499A1 (en) * 1994-07-05 1996-01-18 Zycad Corporation A general purpose, non-volatile reprogrammable switch
JP2780674B2 (ja) * 1995-06-20 1998-07-30 日本電気株式会社 不揮発性半導体記憶装置
US5581501A (en) * 1995-08-17 1996-12-03 Altera Corporation Nonvolatile SRAM cells and cell arrays
US6005806A (en) * 1996-03-14 1999-12-21 Altera Corporation Nonvolatile configuration cells and cell arrays
US6057575A (en) * 1996-03-18 2000-05-02 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
US5668757A (en) * 1996-03-18 1997-09-16 Jeng; Ching-Shi Scalable flash eeprom memory cell and array
US5856943A (en) * 1996-03-18 1999-01-05 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell and array
US5912843A (en) * 1996-03-18 1999-06-15 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
US5949710A (en) * 1996-04-10 1999-09-07 Altera Corporation Programmable interconnect junction
JP3268729B2 (ja) * 1996-06-27 2002-03-25 株式会社東芝 磁気ディスク装置及び磁気ディスク装置におけるエラー訂正方法
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
US6018476A (en) * 1996-09-16 2000-01-25 Altera Corporation Nonvolatile configuration cells and cell arrays
US6236597B1 (en) 1996-09-16 2001-05-22 Altera Corporation Nonvolatile memory cell with multiple gate oxide thicknesses
US5914904A (en) * 1996-10-01 1999-06-22 Altera Corporation Compact electrically erasable memory cells and arrays
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
DE10321742A1 (de) * 2003-05-14 2004-12-09 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Isoliergraben und Feldeffekttransistor sowie Herstellungsverfahren
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
JPS5651875A (en) * 1979-10-04 1981-05-09 Toshiba Corp Semiconductor memory device
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
DE3171836D1 (en) * 1980-12-08 1985-09-19 Toshiba Kk Semiconductor memory device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
EP0108681A3 (de) * 1982-11-04 1986-10-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Bit-löschbarer EEPROM
JPS6262497A (ja) * 1985-09-13 1987-03-19 Nippon Texas Instr Kk Ｅｐｒｏｍの書込み装置

Also Published As

Publication number Publication date
JPH01192092A (ja) 1989-08-02
EP0328918A3 (de) 1992-03-04
DE68918880T2 (de) 1995-02-23
EP0328918A2 (de) 1989-08-23
JPH0814991B2 (ja) 1996-02-14
KR960009031B1 (en) 1996-07-10
US4979146A (en) 1990-12-18
EP0328918B1 (de) 1994-10-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee