DE3886795T2 - Nichtflüchtige Halbleiterspeicheranordnung. - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung.

Info

Publication number
DE3886795T2
DE3886795T2 DE19883886795 DE3886795T DE3886795T2 DE 3886795 T2 DE3886795 T2 DE 3886795T2 DE 19883886795 DE19883886795 DE 19883886795 DE 3886795 T DE3886795 T DE 3886795T DE 3886795 T2 DE3886795 T2 DE 3886795T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19883886795
Other languages
English (en)
Other versions
DE3886795D1 (de
Inventor
Yuji Shimamune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3886795D1 publication Critical patent/DE3886795D1/de
Application granted granted Critical
Publication of DE3886795T2 publication Critical patent/DE3886795T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
DE19883886795 1987-03-27 1988-03-25 Nichtflüchtige Halbleiterspeicheranordnung. Expired - Lifetime DE3886795T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071634A JPS63239694A (ja) 1987-03-27 1987-03-27 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3886795D1 DE3886795D1 (de) 1994-02-17
DE3886795T2 true DE3886795T2 (de) 1994-06-16

Family

ID=13466275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883886795 Expired - Lifetime DE3886795T2 (de) 1987-03-27 1988-03-25 Nichtflüchtige Halbleiterspeicheranordnung.

Country Status (3)

Country Link
EP (1) EP0284091B1 (de)
JP (1) JPS63239694A (de)
DE (1) DE3886795T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1071096B1 (de) 1999-07-22 2003-09-24 STMicroelectronics S.r.l. Leseschaltung für einen nichtflüchtigen Speicher

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
IE55327B1 (en) * 1981-12-29 1990-08-15 Fujitsu Ltd Nonvolatile semiconductor memory circuit
JPS60167198A (ja) * 1984-02-09 1985-08-30 Toshiba Corp 半導体記憶回路
JPS61190796A (ja) * 1985-02-19 1986-08-25 Sharp Corp 半導体メモリ装置

Also Published As

Publication number Publication date
JPS63239694A (ja) 1988-10-05
DE3886795D1 (de) 1994-02-17
EP0284091A3 (en) 1990-12-27
EP0284091B1 (de) 1994-01-05
EP0284091A2 (de) 1988-09-28

Similar Documents

Publication Publication Date Title
DE3855736D1 (de) Nichtflüchtige Halbleiter-Speicheranordnung
DE3875767D1 (de) Halbleiter-festwertspeichereinrichtung.
DE3887224D1 (de) Halbleiterspeicheranordnung.
DE68923505D1 (de) Halbleiterspeicheranordnung.
DE3889097T2 (de) Halbleiterspeicheranordnung.
DE69016153D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE3786819T2 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE3884022T2 (de) Halbleiterspeicheranordnung.
DE68918367T2 (de) Halbleiterspeicheranordnung.
DE3767579D1 (de) Nichtfluechtige halbleiter-speichereinrichtung.
DE3889872D1 (de) Halbleiterspeicheranordnung.
DE68923624D1 (de) Halbleiterspeicheranordnung.
DE3878370T2 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3853038T2 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE3865702D1 (de) Halbleiter-festwertspeichereinrichtung.
DE69015667T2 (de) Nichtflüchtiger Halbleiterspeicher.
DE3876666D1 (de) Halbleiter-festwertspeichereinrichtung.
DE3884820D1 (de) Nichtflüchtige Halbleiterspeichereinrichtung.
DE3853437T2 (de) Halbleiterspeicheranordnung.
DE3883822T2 (de) Halbleiterspeichervorrichtung.
DE3587615D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE68916855D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE69012457D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.
DE3886795D1 (de) Nichtflüchtige Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)