DE3580953D1 - Entladungsvorrichtung. - Google Patents

Entladungsvorrichtung.

Info

Publication number
DE3580953D1
DE3580953D1 DE8585306186T DE3580953T DE3580953D1 DE 3580953 D1 DE3580953 D1 DE 3580953D1 DE 8585306186 T DE8585306186 T DE 8585306186T DE 3580953 T DE3580953 T DE 3580953T DE 3580953 D1 DE3580953 D1 DE 3580953D1
Authority
DE
Germany
Prior art keywords
unloading device
unloading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585306186T
Other languages
English (en)
Inventor
Kyungshik C O Anelva Corpo Kim
Owen C O Anelva Corp Wilkinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59182183A external-priority patent/JPS6159822A/ja
Priority claimed from JP59207530A external-priority patent/JPS6186942A/ja
Application filed by Anelva Corp filed Critical Anelva Corp
Application granted granted Critical
Publication of DE3580953D1 publication Critical patent/DE3580953D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/28—Cooling arrangements
DE8585306186T 1984-08-31 1985-08-30 Entladungsvorrichtung. Expired - Lifetime DE3580953D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59182183A JPS6159822A (ja) 1984-08-31 1984-08-31 交番磁界を用いた放電反応装置
JP59207530A JPS6186942A (ja) 1984-10-03 1984-10-03 回転磁界を用いた放電反応装置

Publications (1)

Publication Number Publication Date
DE3580953D1 true DE3580953D1 (de) 1991-01-31

Family

ID=26501074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306186T Expired - Lifetime DE3580953D1 (de) 1984-08-31 1985-08-30 Entladungsvorrichtung.

Country Status (4)

Country Link
US (1) US4829215A (de)
EP (1) EP0173583B1 (de)
KR (1) KR910000508B1 (de)
DE (1) DE3580953D1 (de)

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KR910000508B1 (ko) * 1984-08-31 1991-01-26 니찌덴 아넬바 가부시끼가이샤 동적자계를 이용한 방전 반응장치
US4661233A (en) * 1985-07-05 1987-04-28 Westinghouse Electric Corp. Cathode/ground shield arrangement in a sputter coating apparatus
US4668338A (en) * 1985-12-30 1987-05-26 Applied Materials, Inc. Magnetron-enhanced plasma etching process
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
ATE151199T1 (de) * 1986-12-19 1997-04-15 Applied Materials Inc Plasmaätzvorrichtung mit magnetfeldverstärkung
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
EP0565212A2 (de) * 1986-12-19 1993-10-13 Applied Materials, Inc. Iodine-Ätzverfahren für Silizium und Silizide
DE3810197A1 (de) * 1987-03-27 1988-10-13 Mitsubishi Electric Corp Plasma-bearbeitungseinrichtung
SE461761B (sv) * 1988-05-03 1990-03-19 Fiz Tekh Inst Ioffe Elektrisk ljusbaaganordning
KR910002310A (ko) * 1988-06-29 1991-01-31 미다 가쓰시게 플라즈마 처리장치
JPH0223613A (ja) * 1988-07-12 1990-01-25 Tokyo Ohka Kogyo Co Ltd プラズマ反応装置
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
KR930004713B1 (ko) * 1990-06-18 1993-06-03 삼성전자 주식회사 변조방식을 이용한 플라즈마 발생장치 및 방법
US6444137B1 (en) 1990-07-31 2002-09-03 Applied Materials, Inc. Method for processing substrates using gaseous silicon scavenger
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5274306A (en) * 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
US5089442A (en) * 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
US5147520A (en) * 1991-02-15 1992-09-15 Mcnc Apparatus and method for controlling processing uniformity in a magnetron
EP0585229B1 (de) * 1991-05-21 1995-09-06 Materials Research Corporation Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
JP3170319B2 (ja) * 1991-08-20 2001-05-28 東京エレクトロン株式会社 マグネトロンプラズマ処理装置
US5182496A (en) * 1992-04-07 1993-01-26 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for forming an agile plasma mirror effective as a microwave reflector
DE69324849T2 (de) * 1992-04-16 1999-09-23 Mitsubishi Heavy Ind Ltd Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung
KR0179663B1 (ko) * 1992-06-26 1999-05-15 이노우에 아끼라 플라즈마 처리장치
US5534108A (en) * 1993-05-28 1996-07-09 Applied Materials, Inc. Method and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactor
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
DE19644150A1 (de) * 1996-10-24 1998-04-30 Roland Dr Gesche Magnetfeldunterstütztes Reinigen, Entfetten und Aktivieren mit Niederdruck-Gasentladungen
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US6342131B1 (en) 1998-04-17 2002-01-29 Kabushiki Kaisha Toshiba Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6239543B1 (en) * 1999-08-23 2001-05-29 American International Technologies, Inc. Electron beam plasma formation for surface chemistry
US8617351B2 (en) * 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
KR100458779B1 (ko) * 2000-03-27 2004-12-03 미츠비시 쥬고교 가부시키가이샤 금속막의 제작방법 및 그 제작장치
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
AU2003219715A1 (en) * 2002-02-05 2003-09-02 Cambridge Scientific, Inc. Bioresorbable osteoconductive compositions for bone regeneration
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
JP4584572B2 (ja) * 2003-12-22 2010-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US8773020B2 (en) 2010-10-22 2014-07-08 Applied Materials, Inc. Apparatus for forming a magnetic field and methods of use thereof
US9269546B2 (en) 2010-10-22 2016-02-23 Applied Materials, Inc. Plasma reactor with electron beam plasma source having a uniform magnetic field

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US3283205A (en) * 1961-06-01 1966-11-01 Bolt Harold E De Shifting arc plasma system
CH551498A (de) * 1972-05-09 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur aufstaeubung von stoffen auf unterlagen mittels einer elektrischen niederspannungsentladung.
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
DE2800852C2 (de) * 1978-01-10 1983-07-14 Jurij Akimovič Moskva Dmitriev Einrichtung zum Ionenplasma-Beschichten
DE3070700D1 (en) * 1980-08-08 1985-07-04 Battelle Development Corp Cylindrical magnetron sputtering cathode
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
IN160089B (de) * 1982-07-14 1987-06-27 Standard Oil Co Ohio
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
AT376460B (de) * 1982-09-17 1984-11-26 Kljuchko Gennady V Plasmalichtbogeneinrichtung zum auftragen von ueberzuegen
US4417968A (en) * 1983-03-21 1983-11-29 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
KR910000508B1 (ko) * 1984-08-31 1991-01-26 니찌덴 아넬바 가부시끼가이샤 동적자계를 이용한 방전 반응장치

Also Published As

Publication number Publication date
KR910000508B1 (ko) 1991-01-26
EP0173583A1 (de) 1986-03-05
EP0173583B1 (de) 1990-12-19
KR870002746A (ko) 1987-04-06
US4829215A (en) 1989-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee