DE69510337D1 - Halbleiterspeicheranordnungen und herstellungsverfahren - Google Patents

Halbleiterspeicheranordnungen und herstellungsverfahren

Info

Publication number
DE69510337D1
DE69510337D1 DE69510337T DE69510337T DE69510337D1 DE 69510337 D1 DE69510337 D1 DE 69510337D1 DE 69510337 T DE69510337 T DE 69510337T DE 69510337 T DE69510337 T DE 69510337T DE 69510337 D1 DE69510337 D1 DE 69510337D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor memory
memory arrangements
arrangements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69510337T
Other languages
English (en)
Other versions
DE69510337T2 (de
Inventor
John Shannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9426008.0A external-priority patent/GB9426008D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69510337D1 publication Critical patent/DE69510337D1/de
Publication of DE69510337T2 publication Critical patent/DE69510337T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
DE69510337T 1994-12-22 1995-12-15 Halbleiterspeicheranordnungen und herstellungsverfahren Expired - Lifetime DE69510337T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9426008.0A GB9426008D0 (en) 1994-12-22 1994-12-22 Programmed semiconductor memory devices and methods of fabricating such
GBGB9515961.2A GB9515961D0 (en) 1994-12-22 1995-08-03 Programmed semiconductor memory devices and methods of fabricating such
PCT/IB1995/001132 WO1996019837A2 (en) 1994-12-22 1995-12-15 Semiconductor memory devices and methods of producing such

Publications (2)

Publication Number Publication Date
DE69510337D1 true DE69510337D1 (de) 1999-07-22
DE69510337T2 DE69510337T2 (de) 1999-12-16

Family

ID=26306238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510337T Expired - Lifetime DE69510337T2 (de) 1994-12-22 1995-12-15 Halbleiterspeicheranordnungen und herstellungsverfahren

Country Status (4)

Country Link
US (1) US5973335A (de)
EP (1) EP0749638B1 (de)
DE (1) DE69510337T2 (de)
WO (1) WO1996019837A2 (de)

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JP4148995B2 (ja) * 1996-06-05 2008-09-10 エヌエックスピー ビー ヴィ 書き込み可能な不揮発性メモリデバイス及びこのデバイスの製造方法
GB9722149D0 (en) * 1997-10-22 1997-12-17 Philips Electronics Nv Semiconductior memory devices
GB0120113D0 (en) 2001-08-17 2001-10-10 Koninkl Philips Electronics Nv Memory circuit
GB0122442D0 (en) 2001-09-18 2001-11-07 Koninkl Philips Electronics Nv Matrix display
US6703652B2 (en) * 2002-01-16 2004-03-09 Hewlett-Packard Development Company, L.P. Memory structure and method making
TWI233204B (en) * 2002-07-26 2005-05-21 Infineon Technologies Ag Nonvolatile memory element and associated production methods and memory element arrangements
JP2006520478A (ja) 2003-01-17 2006-09-07 ダイオード・ソリューションズ・インコーポレーテッド 有機材料を用いたディスプレイ
US20050269621A1 (en) * 2004-06-03 2005-12-08 Micron Technology, Inc. Flash memory devices on silicon carbide
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
DE102004046392A1 (de) 2004-09-24 2006-04-06 Infineon Technologies Ag Halbleiterspeicher
USRE47382E1 (en) * 2005-07-18 2019-05-07 Xenogenic Development Limited Liability Company Back-to-back metal/semiconductor/metal (MSM) Schottky diode
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
US7898042B2 (en) 2006-11-07 2011-03-01 Cbrite Inc. Two-terminal switching devices and their methods of fabrication
CN101627476B (zh) 2006-11-07 2013-03-27 希百特股份有限公司 金属-绝缘体-金属(mim)装置及其制备方法
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8168506B2 (en) 2010-07-13 2012-05-01 Crossbar, Inc. On/off ratio for non-volatile memory device and method
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8492195B2 (en) 2010-08-23 2013-07-23 Crossbar, Inc. Method for forming stackable non-volatile resistive switching memory devices
US8391049B2 (en) * 2010-09-29 2013-03-05 Crossbar, Inc. Resistor structure for a non-volatile memory device and method
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US9252191B2 (en) 2011-07-22 2016-02-02 Crossbar, Inc. Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US8946673B1 (en) 2012-08-24 2015-02-03 Crossbar, Inc. Resistive switching device structure with improved data retention for non-volatile memory device and method
US9312483B2 (en) 2012-09-24 2016-04-12 Crossbar, Inc. Electrode structure for a non-volatile memory device and method
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device

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US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4217601A (en) * 1979-02-15 1980-08-12 International Business Machines Corporation Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
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US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
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US5210766A (en) * 1990-12-27 1993-05-11 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
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US5477482A (en) * 1993-10-01 1995-12-19 The United States Of America As Represented By The Secretary Of The Navy Ultra high density, non-volatile ferromagnetic random access memory

Also Published As

Publication number Publication date
EP0749638A1 (de) 1996-12-27
US5973335A (en) 1999-10-26
WO1996019837A3 (en) 1996-09-12
EP0749638B1 (de) 1999-06-16
DE69510337T2 (de) 1999-12-16
WO1996019837A2 (en) 1996-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL