IT1282087B1 - Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo - Google Patents
Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimoInfo
- Publication number
- IT1282087B1 IT1282087B1 IT96MI000141A ITMI960141A IT1282087B1 IT 1282087 B1 IT1282087 B1 IT 1282087B1 IT 96MI000141 A IT96MI000141 A IT 96MI000141A IT MI960141 A ITMI960141 A IT MI960141A IT 1282087 B1 IT1282087 B1 IT 1282087B1
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- same
- memory device
- semiconductor memory
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1374895 | 1995-01-31 | ||
JP31073795A JP3623834B2 (ja) | 1995-01-31 | 1995-11-29 | 半導体記憶装置及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI960141A0 ITMI960141A0 (it) | 1996-01-26 |
ITMI960141A1 ITMI960141A1 (it) | 1997-07-26 |
IT1282087B1 true IT1282087B1 (it) | 1998-03-12 |
Family
ID=26349588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT96MI000141A IT1282087B1 (it) | 1995-01-31 | 1996-01-26 | Dispositivo di memoria a semiconduttore e metodo per fabbricare il medesimo |
Country Status (4)
Country | Link |
---|---|
US (2) | US5874756A (it) |
JP (1) | JP3623834B2 (it) |
KR (2) | KR100254965B1 (it) |
IT (1) | IT1282087B1 (it) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744091B1 (en) * | 1995-01-31 | 2004-06-01 | Fujitsu Limited | Semiconductor storage device with self-aligned opening and method for fabricating the same |
JP2008263211A (ja) * | 1995-01-31 | 2008-10-30 | Fujitsu Ltd | 半導体装置 |
JP4190760B2 (ja) * | 1995-01-31 | 2008-12-03 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US6420725B1 (en) | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5616792A (en) * | 1996-02-01 | 1997-04-01 | Amoco Corporation | Catalytic purification of dicarboxylic aromatic acid |
US5756833A (en) * | 1996-02-01 | 1998-05-26 | Amoco Corporation | Catalytic purification and recovery of dicarboxylic aromatic acids |
US6686288B1 (en) | 1996-02-21 | 2004-02-03 | Micron Technology, Inc. | Integrated circuit having self-aligned CVD-tungsten/titanium contact plugs strapped with metal interconnect and method of manufacture |
US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US6214727B1 (en) | 1997-02-11 | 2001-04-10 | Micron Technology, Inc. | Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry |
JP2943914B2 (ja) | 1997-02-19 | 1999-08-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6063656A (en) * | 1997-04-18 | 2000-05-16 | Micron Technology, Inc. | Cell capacitors, memory cells, memory arrays, and method of fabrication |
JPH10321624A (ja) * | 1997-05-20 | 1998-12-04 | Toshiba Corp | 半導体装置の製造方法 |
KR100356826B1 (ko) | 1997-05-29 | 2004-05-17 | 주식회사 하이닉스반도체 | 반도체장치 및 그의 제조방법 |
JP2006245625A (ja) * | 1997-06-20 | 2006-09-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH1140766A (ja) | 1997-07-16 | 1999-02-12 | Fujitsu Ltd | 半導体装置、dram、フラッシュメモリ、およびその製造方法 |
JPH11233737A (ja) | 1998-02-10 | 1999-08-27 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR100281892B1 (ko) * | 1998-03-10 | 2001-03-02 | 윤종용 | 광역평탄화된반도체장치의제조방법 |
KR100285698B1 (ko) * | 1998-07-13 | 2001-04-02 | 윤종용 | 반도체장치의제조방법 |
JP3931445B2 (ja) * | 1998-09-10 | 2007-06-13 | 株式会社日立製作所 | 半導体装置の製造方法 |
US6734564B1 (en) * | 1999-01-04 | 2004-05-11 | International Business Machines Corporation | Specially shaped contact via and integrated circuit therewith |
JP2000232207A (ja) * | 1999-02-10 | 2000-08-22 | Nec Corp | 半導体装置およびその製造方法 |
JP3296324B2 (ja) | 1999-04-07 | 2002-06-24 | 日本電気株式会社 | 半導体メモリ装置の製造方法 |
US6344389B1 (en) | 1999-04-19 | 2002-02-05 | International Business Machines Corporation | Self-aligned damascene interconnect |
US6458649B1 (en) * | 1999-07-22 | 2002-10-01 | Micron Technology, Inc. | Methods of forming capacitor-over-bit line memory cells |
US6589876B1 (en) * | 1999-07-22 | 2003-07-08 | Micron Technology, Inc. | Methods of forming conductive capacitor plugs, methods of forming capacitor contact openings, and methods of forming memory arrays |
US6159818A (en) * | 1999-09-02 | 2000-12-12 | Micron Technology, Inc. | Method of forming a container capacitor structure |
FR2800199B1 (fr) * | 1999-10-21 | 2002-03-01 | St Microelectronics Sa | Fabrication de memoire dram |
KR100317331B1 (ko) * | 1999-11-11 | 2001-12-24 | 박종섭 | 불휘발성 강유전체 메모리 소자 및 그 제조방법 |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6498088B1 (en) | 2000-11-09 | 2002-12-24 | Micron Technology, Inc. | Stacked local interconnect structure and method of fabricating same |
US6642584B2 (en) * | 2001-01-30 | 2003-11-04 | International Business Machines Corporation | Dual work function semiconductor structure with borderless contact and method of fabricating the same |
JP3989697B2 (ja) * | 2001-05-30 | 2007-10-10 | 富士通株式会社 | 半導体装置及び半導体装置の位置検出方法 |
FR2828766B1 (fr) * | 2001-08-16 | 2004-01-16 | St Microelectronics Sa | Circuit integre comprenant des elements actifs et au moins un element passif, notamment des cellules memoire dram et procede de fabrication |
FR2828763B1 (fr) * | 2001-08-16 | 2004-01-16 | St Microelectronics Sa | Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication |
FR2828764B1 (fr) * | 2001-08-16 | 2004-01-23 | St Microelectronics Sa | Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit |
JP2003163283A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
FR2832854B1 (fr) * | 2001-11-28 | 2004-03-12 | St Microelectronics Sa | Fabrication de memoire dram et de transistor mos |
US7317208B2 (en) * | 2002-03-07 | 2008-01-08 | Samsung Electronics Co., Ltd. | Semiconductor device with contact structure and manufacturing method thereof |
US7125781B2 (en) * | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
JP4908748B2 (ja) * | 2003-09-22 | 2012-04-04 | 三星電子株式会社 | 半導体素子を製造するためのエッチング方法 |
US7005379B2 (en) * | 2004-04-08 | 2006-02-28 | Micron Technology, Inc. | Semiconductor processing methods for forming electrical contacts |
JP4074292B2 (ja) * | 2005-01-17 | 2008-04-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
US7768014B2 (en) * | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
KR100724568B1 (ko) * | 2005-10-12 | 2007-06-04 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
JP2006191137A (ja) * | 2006-02-23 | 2006-07-20 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
JP4533919B2 (ja) * | 2007-09-18 | 2010-09-01 | 株式会社東芝 | 不揮発性半導体メモリの製造方法 |
JP2008034866A (ja) * | 2007-09-18 | 2008-02-14 | Toshiba Corp | 半導体装置 |
KR20120019262A (ko) * | 2010-08-25 | 2012-03-06 | 삼성전자주식회사 | 반도체 소자 및 이를 제조하는 방법 |
KR101153815B1 (ko) * | 2010-11-16 | 2012-06-14 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
JP2011049601A (ja) * | 2010-12-03 | 2011-03-10 | Renesas Electronics Corp | 半導体装置 |
JP5991729B2 (ja) | 2011-10-07 | 2016-09-14 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
KR101709810B1 (ko) * | 2012-06-14 | 2017-03-08 | 삼성전기주식회사 | 고주파 인덕터의 제조방법 |
KR102437295B1 (ko) * | 2015-11-09 | 2022-08-30 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
WO2017217132A1 (ja) * | 2016-06-15 | 2017-12-21 | ソニー株式会社 | 半導体装置、及び、半導体装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0673368B2 (ja) * | 1985-01-31 | 1994-09-14 | 富士通株式会社 | 半導体記憶装置およびその製造方法 |
US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
JP2932540B2 (ja) * | 1989-11-28 | 1999-08-09 | ソニー株式会社 | 半導体メモリ装置 |
US5150278A (en) | 1991-04-16 | 1992-09-22 | J. E. Thomas Specialties Limited | Finned housing |
DE4213945A1 (de) * | 1991-04-29 | 1992-11-05 | Micron Technology Inc | Speicherkondensator und verfahren zu dessen herstellung |
US5110754A (en) * | 1991-10-04 | 1992-05-05 | Micron Technology, Inc. | Method of making a DRAM capacitor for use as an programmable antifuse for redundancy repair/options on a DRAM |
KR940006682B1 (ko) * | 1991-10-17 | 1994-07-25 | 삼성전자 주식회사 | 반도체 메모리장치의 제조방법 |
US5150276A (en) * | 1992-01-24 | 1992-09-22 | Micron Technology, Inc. | Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings |
US5292677A (en) * | 1992-09-18 | 1994-03-08 | Micron Technology, Inc. | Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts |
US5605857A (en) * | 1993-02-12 | 1997-02-25 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
-
1995
- 1995-11-29 JP JP31073795A patent/JP3623834B2/ja not_active Expired - Lifetime
-
1996
- 1996-01-26 IT IT96MI000141A patent/IT1282087B1/it active IP Right Grant
- 1996-01-26 US US08/592,481 patent/US5874756A/en not_active Expired - Lifetime
- 1996-01-31 KR KR1019960002248A patent/KR100254965B1/ko active IP Right Grant
-
1998
- 1998-03-09 US US09/037,068 patent/US6395599B1/en not_active Expired - Lifetime
-
1999
- 1999-10-01 KR KR1019990042259A patent/KR100354296B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100354296B1 (ko) | 2002-09-28 |
KR100254965B1 (ko) | 2000-05-01 |
US6395599B1 (en) | 2002-05-28 |
ITMI960141A1 (it) | 1997-07-26 |
JPH08274278A (ja) | 1996-10-18 |
JP3623834B2 (ja) | 2005-02-23 |
US5874756A (en) | 1999-02-23 |
KR960030423A (ko) | 1996-08-17 |
ITMI960141A0 (it) | 1996-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |