FR2828764B1 - Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit - Google Patents
Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuitInfo
- Publication number
- FR2828764B1 FR2828764B1 FR0110868A FR0110868A FR2828764B1 FR 2828764 B1 FR2828764 B1 FR 2828764B1 FR 0110868 A FR0110868 A FR 0110868A FR 0110868 A FR0110868 A FR 0110868A FR 2828764 B1 FR2828764 B1 FR 2828764B1
- Authority
- FR
- France
- Prior art keywords
- circuit
- manufacturing
- memory cell
- cell incorporating
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0110868A FR2828764B1 (fr) | 2001-08-16 | 2001-08-16 | Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit |
EP02794816A EP1423875A1 (fr) | 2001-08-16 | 2002-08-14 | Circuit integre avec cellule memoire dram et son procede de fabrication |
US10/486,950 US7259414B2 (en) | 2001-08-16 | 2002-08-14 | Integrated circuit, its fabrication process and memory cell incorporating such a circuit |
PCT/FR2002/002885 WO2003017360A1 (fr) | 2001-08-16 | 2002-08-14 | Circuit integre avec cellule memoire dram et son procede de fabrication |
JP2003522165A JP2005500693A (ja) | 2001-08-16 | 2002-08-14 | 集積回路とその製造方法およびそのような集積回路を組み込んだメモリ・セル |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0110868A FR2828764B1 (fr) | 2001-08-16 | 2001-08-16 | Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2828764A1 FR2828764A1 (fr) | 2003-02-21 |
FR2828764B1 true FR2828764B1 (fr) | 2004-01-23 |
Family
ID=8866569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0110868A Expired - Fee Related FR2828764B1 (fr) | 2001-08-16 | 2001-08-16 | Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit |
Country Status (5)
Country | Link |
---|---|
US (1) | US7259414B2 (fr) |
EP (1) | EP1423875A1 (fr) |
JP (1) | JP2005500693A (fr) |
FR (1) | FR2828764B1 (fr) |
WO (1) | WO2003017360A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5898754B1 (ja) * | 2014-11-14 | 2016-04-06 | 株式会社ジオパワーシステム | 床支持体及び建物空調システム |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855953A (en) * | 1987-02-25 | 1989-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having stacked memory capacitors and method for manufacturing the same |
JP3086747B2 (ja) * | 1992-05-07 | 2000-09-11 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3623834B2 (ja) * | 1995-01-31 | 2005-02-23 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
WO1996027901A1 (fr) * | 1995-03-07 | 1996-09-12 | Micron Technology, Inc. | Contacts ameliores de semiconducteur avec des couches conductrices minces |
US6344413B1 (en) * | 1997-12-22 | 2002-02-05 | Motorola Inc. | Method for forming a semiconductor device |
US6057571A (en) * | 1998-03-31 | 2000-05-02 | Lsi Logic Corporation | High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit |
US6259149B1 (en) * | 1998-07-07 | 2001-07-10 | Agere Systems Guardian Corp. | Fully isolated thin-film trench capacitor |
KR100275752B1 (ko) * | 1998-11-18 | 2000-12-15 | 윤종용 | 접합 스페이서를 구비한 컨케이브 커패시터의 제조방법 |
US6281535B1 (en) * | 1999-01-22 | 2001-08-28 | Agilent Technologies, Inc. | Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell |
JP2000236076A (ja) * | 1999-02-15 | 2000-08-29 | Nec Corp | 半導体装置及びその製造方法 |
JP3296324B2 (ja) * | 1999-04-07 | 2002-06-24 | 日本電気株式会社 | 半導体メモリ装置の製造方法 |
TW501270B (en) * | 1999-11-30 | 2002-09-01 | Hitachi Ltd | Semiconductor device and its manufacturing method |
US6710389B2 (en) * | 2001-02-09 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same |
US6559497B2 (en) * | 2001-09-06 | 2003-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic capacitor with barrier layer |
FR2839811A1 (fr) * | 2002-05-15 | 2003-11-21 | St Microelectronics Sa | Condensateur en tranchees dans un substrat avec deux electrodes flottantes et independantes du substrat |
-
2001
- 2001-08-16 FR FR0110868A patent/FR2828764B1/fr not_active Expired - Fee Related
-
2002
- 2002-08-14 EP EP02794816A patent/EP1423875A1/fr not_active Withdrawn
- 2002-08-14 US US10/486,950 patent/US7259414B2/en not_active Expired - Lifetime
- 2002-08-14 JP JP2003522165A patent/JP2005500693A/ja active Pending
- 2002-08-14 WO PCT/FR2002/002885 patent/WO2003017360A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7259414B2 (en) | 2007-08-21 |
JP2005500693A (ja) | 2005-01-06 |
US20040266099A1 (en) | 2004-12-30 |
WO2003017360A1 (fr) | 2003-02-27 |
EP1423875A1 (fr) | 2004-06-02 |
FR2828764A1 (fr) | 2003-02-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |