FR2828764B1 - Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit - Google Patents

Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit

Info

Publication number
FR2828764B1
FR2828764B1 FR0110868A FR0110868A FR2828764B1 FR 2828764 B1 FR2828764 B1 FR 2828764B1 FR 0110868 A FR0110868 A FR 0110868A FR 0110868 A FR0110868 A FR 0110868A FR 2828764 B1 FR2828764 B1 FR 2828764B1
Authority
FR
France
Prior art keywords
circuit
manufacturing
memory cell
cell incorporating
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0110868A
Other languages
English (en)
Other versions
FR2828764A1 (fr
Inventor
Catherine Mallardeau
Pascale Mazoyer
Marc Piazza
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0110868A priority Critical patent/FR2828764B1/fr
Priority to JP2003522165A priority patent/JP2005500693A/ja
Priority to US10/486,950 priority patent/US7259414B2/en
Priority to PCT/FR2002/002885 priority patent/WO2003017360A1/fr
Priority to EP02794816A priority patent/EP1423875A1/fr
Publication of FR2828764A1 publication Critical patent/FR2828764A1/fr
Application granted granted Critical
Publication of FR2828764B1 publication Critical patent/FR2828764B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
FR0110868A 2001-08-16 2001-08-16 Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit Expired - Fee Related FR2828764B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0110868A FR2828764B1 (fr) 2001-08-16 2001-08-16 Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit
JP2003522165A JP2005500693A (ja) 2001-08-16 2002-08-14 集積回路とその製造方法およびそのような集積回路を組み込んだメモリ・セル
US10/486,950 US7259414B2 (en) 2001-08-16 2002-08-14 Integrated circuit, its fabrication process and memory cell incorporating such a circuit
PCT/FR2002/002885 WO2003017360A1 (fr) 2001-08-16 2002-08-14 Circuit integre avec cellule memoire dram et son procede de fabrication
EP02794816A EP1423875A1 (fr) 2001-08-16 2002-08-14 Circuit integre avec cellule memoire dram et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0110868A FR2828764B1 (fr) 2001-08-16 2001-08-16 Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit

Publications (2)

Publication Number Publication Date
FR2828764A1 FR2828764A1 (fr) 2003-02-21
FR2828764B1 true FR2828764B1 (fr) 2004-01-23

Family

ID=8866569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0110868A Expired - Fee Related FR2828764B1 (fr) 2001-08-16 2001-08-16 Circuit integre et son procede de fabrication, et cellule de memoire incorporant un tel circuit

Country Status (5)

Country Link
US (1) US7259414B2 (fr)
EP (1) EP1423875A1 (fr)
JP (1) JP2005500693A (fr)
FR (1) FR2828764B1 (fr)
WO (1) WO2003017360A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5898754B1 (ja) * 2014-11-14 2016-04-06 株式会社ジオパワーシステム 床支持体及び建物空調システム

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855953A (en) * 1987-02-25 1989-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having stacked memory capacitors and method for manufacturing the same
JP3086747B2 (ja) * 1992-05-07 2000-09-11 三菱電機株式会社 半導体装置およびその製造方法
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
WO1996027901A1 (fr) * 1995-03-07 1996-09-12 Micron Technology, Inc. Contacts ameliores de semiconducteur avec des couches conductrices minces
US6344413B1 (en) * 1997-12-22 2002-02-05 Motorola Inc. Method for forming a semiconductor device
US6057571A (en) * 1998-03-31 2000-05-02 Lsi Logic Corporation High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit
US6259149B1 (en) * 1998-07-07 2001-07-10 Agere Systems Guardian Corp. Fully isolated thin-film trench capacitor
KR100275752B1 (ko) * 1998-11-18 2000-12-15 윤종용 접합 스페이서를 구비한 컨케이브 커패시터의 제조방법
US6281535B1 (en) * 1999-01-22 2001-08-28 Agilent Technologies, Inc. Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell
JP2000236076A (ja) * 1999-02-15 2000-08-29 Nec Corp 半導体装置及びその製造方法
JP3296324B2 (ja) * 1999-04-07 2002-06-24 日本電気株式会社 半導体メモリ装置の製造方法
TW501270B (en) * 1999-11-30 2002-09-01 Hitachi Ltd Semiconductor device and its manufacturing method
US6710389B2 (en) * 2001-02-09 2004-03-23 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same
US6559497B2 (en) * 2001-09-06 2003-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Microelectronic capacitor with barrier layer
FR2839811A1 (fr) * 2002-05-15 2003-11-21 St Microelectronics Sa Condensateur en tranchees dans un substrat avec deux electrodes flottantes et independantes du substrat

Also Published As

Publication number Publication date
FR2828764A1 (fr) 2003-02-21
JP2005500693A (ja) 2005-01-06
US20040266099A1 (en) 2004-12-30
EP1423875A1 (fr) 2004-06-02
US7259414B2 (en) 2007-08-21
WO2003017360A1 (fr) 2003-02-27

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Legal Events

Date Code Title Description
ST Notification of lapse