FR2828763B1 - Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication - Google Patents

Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication

Info

Publication number
FR2828763B1
FR2828763B1 FR0110867A FR0110867A FR2828763B1 FR 2828763 B1 FR2828763 B1 FR 2828763B1 FR 0110867 A FR0110867 A FR 0110867A FR 0110867 A FR0110867 A FR 0110867A FR 2828763 B1 FR2828763 B1 FR 2828763B1
Authority
FR
France
Prior art keywords
fabrication
integrated circuit
memory cell
form factor
dram memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0110867A
Other languages
English (en)
Other versions
FR2828763A1 (fr
Inventor
Pascale Mazoyer
Christian Caillat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0110867A priority Critical patent/FR2828763B1/fr
Priority to JP2003522167A priority patent/JP2005500695A/ja
Priority to EP02794818A priority patent/EP1425795A1/fr
Priority to PCT/FR2002/002887 priority patent/WO2003017362A1/fr
Priority to US10/486,752 priority patent/US20040262638A1/en
Publication of FR2828763A1 publication Critical patent/FR2828763A1/fr
Application granted granted Critical
Publication of FR2828763B1 publication Critical patent/FR2828763B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
FR0110867A 2001-08-16 2001-08-16 Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication Expired - Fee Related FR2828763B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0110867A FR2828763B1 (fr) 2001-08-16 2001-08-16 Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication
JP2003522167A JP2005500695A (ja) 2001-08-16 2002-08-14 Ｄｒａｍメモリ・セルを備える集積回路
EP02794818A EP1425795A1 (fr) 2001-08-16 2002-08-14 Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication
PCT/FR2002/002887 WO2003017362A1 (fr) 2001-08-16 2002-08-14 Circuit integre avec cellule memoire dram
US10/486,752 US20040262638A1 (en) 2001-08-16 2002-08-14 Integrated circuit with dram memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0110867A FR2828763B1 (fr) 2001-08-16 2001-08-16 Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2828763A1 FR2828763A1 (fr) 2003-02-21
FR2828763B1 true FR2828763B1 (fr) 2004-01-16

Family

ID=8866568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0110867A Expired - Fee Related FR2828763B1 (fr) 2001-08-16 2001-08-16 Circuit integre, notamment cellule memoire dram avec contact a faible facteur de forme et procede de fabrication

Country Status (5)

Country Link
US (1) US20040262638A1 (fr)
EP (1) EP1425795A1 (fr)
JP (1) JP2005500695A (fr)
FR (1) FR2828763B1 (fr)
WO (1) WO2003017362A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008087498A1 (fr) * 2007-01-17 2008-07-24 Stmicroelectronics Crolles 2 Sas Condensateur empilé de mémoire vive dynamique et son procédé de fabrication utilisant un polissage chimico-mécanique
KR101159900B1 (ko) * 2009-04-22 2012-06-25 에스케이하이닉스 주식회사 반도체 소자 및 그 제조방법
US8803122B2 (en) * 2012-07-31 2014-08-12 Globalfoundries Singapore Pte. Ltd. Method for forming a PCRAM with low reset current
KR102601650B1 (ko) * 2016-07-26 2023-11-13 삼성디스플레이 주식회사 표시 장치
TWI642334B (zh) 2017-10-25 2018-11-21 欣興電子股份有限公司 電路板及其製造方法
TWI642333B (zh) * 2017-10-25 2018-11-21 欣興電子股份有限公司 電路板及其製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0223657A (ja) * 1988-07-12 1990-01-25 Sharp Corp 半導体メモリ素子
JPH0260162A (ja) * 1988-08-25 1990-02-28 Sony Corp 半導体メモリ
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
US6214727B1 (en) * 1997-02-11 2001-04-10 Micron Technology, Inc. Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry
US6737696B1 (en) * 1998-06-03 2004-05-18 Micron Technology, Inc. DRAM capacitor formulation using a double-sided electrode
US5895239A (en) * 1998-09-14 1999-04-20 Vanguard International Semiconductor Corporation Method for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contacts

Also Published As

Publication number Publication date
EP1425795A1 (fr) 2004-06-09
US20040262638A1 (en) 2004-12-30
WO2003017362A1 (fr) 2003-02-27
WO2003017362A8 (fr) 2003-04-03
JP2005500695A (ja) 2005-01-06
FR2828763A1 (fr) 2003-02-21

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Legal Events

Date Code Title Description
ST Notification of lapse