FR2807208B1 - Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant - Google Patents

Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant

Info

Publication number
FR2807208B1
FR2807208B1 FR0003983A FR0003983A FR2807208B1 FR 2807208 B1 FR2807208 B1 FR 2807208B1 FR 0003983 A FR0003983 A FR 0003983A FR 0003983 A FR0003983 A FR 0003983A FR 2807208 B1 FR2807208 B1 FR 2807208B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
volatile memory
memory semiconductor
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0003983A
Other languages
English (en)
Other versions
FR2807208A1 (fr
Inventor
Thomas Skotnicki
Richard Fournel
Didier Dutartre
Pascal Ribot
Maryse Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0003983A priority Critical patent/FR2807208B1/fr
Priority to US09/814,177 priority patent/US20010050387A1/en
Publication of FR2807208A1 publication Critical patent/FR2807208A1/fr
Priority to US10/273,925 priority patent/US6642108B2/en
Application granted granted Critical
Publication of FR2807208B1 publication Critical patent/FR2807208B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
FR0003983A 2000-03-29 2000-03-29 Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant Expired - Fee Related FR2807208B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0003983A FR2807208B1 (fr) 2000-03-29 2000-03-29 Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant
US09/814,177 US20010050387A1 (en) 2000-03-29 2001-03-21 Semiconductor non-volatile memory device and corresponding fabrication process
US10/273,925 US6642108B2 (en) 2000-03-29 2002-10-18 Fabrication processes for semiconductor non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0003983A FR2807208B1 (fr) 2000-03-29 2000-03-29 Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
FR2807208A1 FR2807208A1 (fr) 2001-10-05
FR2807208B1 true FR2807208B1 (fr) 2003-09-05

Family

ID=8848620

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0003983A Expired - Fee Related FR2807208B1 (fr) 2000-03-29 2000-03-29 Dispositif semi-conducteur de memoire non volatile et procede de fabrication correspondant

Country Status (2)

Country Link
US (2) US20010050387A1 (fr)
FR (1) FR2807208B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771152B1 (ko) * 2003-07-16 2007-10-29 매그나칩 반도체 유한회사 트렌치 방식을 이용한 플래시 메모리 셀의 제조방법
US20060043463A1 (en) * 2004-09-01 2006-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Floating gate having enhanced charge retention
US8022489B2 (en) * 2005-05-20 2011-09-20 Macronix International Co., Ltd. Air tunnel floating gate memory cell
US8242542B2 (en) * 2009-02-24 2012-08-14 International Business Machines Corporation Semiconductor switching device employing a quantum dot structure
US8227300B2 (en) 2009-03-18 2012-07-24 International Business Machines Corporation Semiconductor switching circuit employing quantum dot structures
US10128593B1 (en) * 2017-09-28 2018-11-13 International Business Machines Corporation Connector having a body with a conductive layer common to top and bottom surfaces of the body as well as to wall surfaces of a plurality of holes in the body

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148464A (en) * 1979-05-08 1980-11-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Mos semiconductor device and its manufacture
JPS61144879A (ja) * 1984-12-18 1986-07-02 Toshiba Corp 半導体装置
IT1189976B (it) * 1986-02-21 1988-02-10 Sgs Microelettronica Spa Processo per la fabbricazione di transistori ad effetto di campo a "gate" isolato con giunzioni a profondita' nulla mediante planarizzazione
JPS6410673A (en) * 1987-07-02 1989-01-13 Fujitsu Ltd Non volatile semiconductor memory device
JPH0322485A (ja) * 1989-06-19 1991-01-30 Nec Corp 不揮発性メモリ用電界効果トランジスタ
JP3541958B2 (ja) 1993-12-16 2004-07-14 株式会社東芝 不揮発性半導体記憶装置
US5488244A (en) 1995-02-27 1996-01-30 Chartered Simiconductor Manufacturing Pte Ltd. Electrically erasable and programmable read only memory cell
KR0166840B1 (ko) * 1995-05-12 1999-01-15 문정환 리세스 채널 구조를 갖는 반도체 소자 및 그의 제조방법
JPH09330988A (ja) * 1996-06-11 1997-12-22 Sony Corp 積層ゲート型不揮発性半導体記憶装置
US5973352A (en) * 1997-08-20 1999-10-26 Micron Technology, Inc. Ultra high density flash memory having vertically stacked devices
US6060358A (en) 1997-10-21 2000-05-09 International Business Machines Corporation Damascene NVRAM cell and method of manufacture
DE19811080C2 (de) * 1998-03-13 2000-10-26 Siemens Ag Elektrisch schreib- und löschbare Speicherzellenanordnung und Verfahren zu deren Herstellung
US5990515A (en) * 1998-03-30 1999-11-23 Advanced Micro Devices, Inc. Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping
TW379453B (en) 1998-05-26 2000-01-11 United Microelectronics Corp Method of manufacturing buried gate
US6184552B1 (en) * 1998-07-17 2001-02-06 National Semiconductor Corporation Non-volatile memory cell with non-trenched substrate
US6518072B1 (en) * 1999-11-05 2003-02-11 Advanced Micro Devices, Inc. Deposited screen oxide for reducing gate edge lifting

Also Published As

Publication number Publication date
FR2807208A1 (fr) 2001-10-05
US20010050387A1 (en) 2001-12-13
US20030038315A1 (en) 2003-02-27
US6642108B2 (en) 2003-11-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091130