FR2808122B1 - Dispositif a semiconducteurs et procede pour sa fabrication - Google Patents
Dispositif a semiconducteurs et procede pour sa fabricationInfo
- Publication number
- FR2808122B1 FR2808122B1 FR0016209A FR0016209A FR2808122B1 FR 2808122 B1 FR2808122 B1 FR 2808122B1 FR 0016209 A FR0016209 A FR 0016209A FR 0016209 A FR0016209 A FR 0016209A FR 2808122 B1 FR2808122 B1 FR 2808122B1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000117720A JP4776752B2 (ja) | 2000-04-19 | 2000-04-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2808122A1 FR2808122A1 (fr) | 2001-10-26 |
FR2808122B1 true FR2808122B1 (fr) | 2003-10-24 |
Family
ID=18628989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0016209A Expired - Fee Related FR2808122B1 (fr) | 2000-04-19 | 2000-12-13 | Dispositif a semiconducteurs et procede pour sa fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US6452249B1 (fr) |
JP (1) | JP4776752B2 (fr) |
KR (1) | KR100404831B1 (fr) |
DE (1) | DE10062232A1 (fr) |
FR (1) | FR2808122B1 (fr) |
TW (1) | TW508794B (fr) |
Families Citing this family (90)
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US6407441B1 (en) * | 1997-12-29 | 2002-06-18 | Texas Instruments Incorporated | Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications |
JP4969715B2 (ja) * | 2000-06-06 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2002110908A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法 |
JP2002164441A (ja) * | 2000-11-27 | 2002-06-07 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路装置 |
JP2002198490A (ja) * | 2000-12-26 | 2002-07-12 | Toshiba Corp | 半導体装置 |
JP3579000B2 (ja) * | 2001-04-05 | 2004-10-20 | シャープ株式会社 | 半導体装置 |
US6864558B2 (en) * | 2001-05-17 | 2005-03-08 | Broadcom Corporation | Layout technique for C3MOS inductive broadbanding |
JP4176342B2 (ja) * | 2001-10-29 | 2008-11-05 | 川崎マイクロエレクトロニクス株式会社 | 半導体装置およびそのレイアウト方法 |
US6744129B2 (en) * | 2002-01-11 | 2004-06-01 | Microtune (San Diego), Inc. | Integrated ground shield |
JP4274730B2 (ja) * | 2002-01-30 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4355128B2 (ja) * | 2002-07-04 | 2009-10-28 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20040011016A (ko) * | 2002-07-26 | 2004-02-05 | 동부전자 주식회사 | 알에프 반도체소자 제조방법 |
JP2004104102A (ja) | 2002-08-21 | 2004-04-02 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
TWI300617B (en) * | 2002-11-15 | 2008-09-01 | Via Tech Inc | Low substrate loss inductor |
WO2004070746A1 (fr) * | 2003-02-04 | 2004-08-19 | Mitsubishi Denki Kabushiki Kaisha | Inductance a spirale et transformateur |
US20040195650A1 (en) * | 2003-04-04 | 2004-10-07 | Tsung-Ju Yang | High-Q inductor device with a shielding pattern embedded in a substrate |
US20050247999A1 (en) * | 2003-05-29 | 2005-11-10 | Kazuyasu Nishikawa | Semiconductor device |
WO2004112138A1 (fr) * | 2003-06-16 | 2004-12-23 | Nec Corporation | Dispositif a semi-conducteur et procede de fabrication correspondant |
JP4651920B2 (ja) * | 2003-07-15 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
SE0302107D0 (sv) * | 2003-07-18 | 2003-07-18 | Infineon Technologies Ag | Electromagnetic device and method of operating the same |
US6936764B2 (en) * | 2003-08-12 | 2005-08-30 | International Business Machines Corporation | Three dimensional dynamically shielded high-Q BEOL metallization |
EP1553812A3 (fr) * | 2003-12-11 | 2013-04-03 | STMicroelectronics S.A. | Puce à semiconducteur et circuit comprenant une inductance blindée |
JP2005183686A (ja) * | 2003-12-19 | 2005-07-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US20050181572A1 (en) * | 2004-02-13 | 2005-08-18 | Verhoeven Tracy B. | Method for acoustically isolating an acoustic resonator from a substrate |
US7154161B1 (en) * | 2004-04-16 | 2006-12-26 | Newport Fab, Llc | Composite ground shield for passive components in a semiconductor die |
JP5025095B2 (ja) * | 2004-05-07 | 2012-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4768972B2 (ja) * | 2004-05-31 | 2011-09-07 | ルネサスエレクトロニクス株式会社 | インダクタ |
US7118986B2 (en) * | 2004-06-16 | 2006-10-10 | International Business Machines Corporation | STI formation in semiconductor device including SOI and bulk silicon regions |
KR100632464B1 (ko) * | 2004-08-03 | 2006-10-09 | 삼성전자주식회사 | 수동 소자 쉴드 구조를 포함하는 집적 회로 및 그 제조방법 |
US7663205B2 (en) * | 2004-08-03 | 2010-02-16 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a dummy gate structure below a passive electronic element |
JP2006059959A (ja) * | 2004-08-19 | 2006-03-02 | Oki Electric Ind Co Ltd | 半導体装置、及び半導体装置の製造方法 |
JP4175650B2 (ja) * | 2004-08-26 | 2008-11-05 | シャープ株式会社 | 半導体装置の製造方法 |
JP4795667B2 (ja) * | 2004-11-05 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2006186034A (ja) * | 2004-12-27 | 2006-07-13 | Toshiba Corp | 半導体装置 |
CN101111938B (zh) * | 2005-01-28 | 2010-08-11 | 株式会社半导体能源研究所 | 半导体器件和制造它的方法 |
US7501690B2 (en) * | 2005-05-09 | 2009-03-10 | International Business Machines Corporation | Semiconductor ground shield method |
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CN102638113B (zh) * | 2012-04-11 | 2014-08-27 | 华中科技大学 | 一种磁耦合谐振装置 |
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JP5968968B2 (ja) * | 2014-09-19 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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TWI587473B (zh) * | 2016-01-28 | 2017-06-11 | 瑞昱半導體股份有限公司 | 圖案式接地防護層 |
CN107039143B (zh) * | 2016-02-03 | 2019-10-11 | 瑞昱半导体股份有限公司 | 图案式接地防护层 |
US10566409B2 (en) * | 2016-05-10 | 2020-02-18 | Dumitru Nicolae LESENCO | Integrated quantized inductor and fabrication method thereof |
JP2018026475A (ja) * | 2016-08-10 | 2018-02-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10217703B2 (en) * | 2017-01-03 | 2019-02-26 | Xilinx, Inc. | Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit |
JP2019220646A (ja) * | 2018-06-22 | 2019-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2020013902A (ja) * | 2018-07-18 | 2020-01-23 | 株式会社東海理化電機製作所 | 半導体装置及びその製造方法 |
JP2022043369A (ja) * | 2018-12-26 | 2022-03-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および電子機器 |
KR20210085421A (ko) * | 2019-12-30 | 2021-07-08 | 에스케이하이닉스 주식회사 | 반도체 장치 |
FR3108443B1 (fr) | 2020-03-18 | 2023-12-29 | Commissariat Energie Atomique | Substrat rf avec jonctions ayant un agencement ameliore |
US11588056B2 (en) | 2020-08-13 | 2023-02-21 | Globalfoundries U.S. Inc. | Structure with polycrystalline active region fill shape(s), and related method |
US11152394B1 (en) | 2020-08-13 | 2021-10-19 | Globalfoundries U.S. Inc. | Structure with polycrystalline isolation region below polycrystalline fill shape(s) and selective active device(s), and related method |
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JP3582890B2 (ja) * | 1995-05-23 | 2004-10-27 | 株式会社日立製作所 | 半導体装置 |
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JPH09270515A (ja) | 1996-04-01 | 1997-10-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
DE69738012T2 (de) * | 1996-11-26 | 2007-12-13 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleitervorrichtung und deren Herstellungsverfahren |
WO1998050956A1 (fr) * | 1997-05-02 | 1998-11-12 | The Board Of Trustees Of The Leland Stanford Junior University | Blindages de masse a motifs geometriques pour inducteurs de circuits integres |
JPH10321802A (ja) * | 1997-05-22 | 1998-12-04 | Toshiba Corp | インダクタ素子 |
US6030877A (en) * | 1997-10-06 | 2000-02-29 | Industrial Technology Research Institute | Electroless gold plating method for forming inductor structures |
US6153489A (en) * | 1997-12-22 | 2000-11-28 | Electronics And Telecommunications Research Institute | Fabrication method of inductor devices using a substrate conversion technique |
KR19990070958A (ko) | 1998-02-26 | 1999-09-15 | 윤종용 | 반도체 집적회로용 유도성 소자 |
EP0940849A1 (fr) * | 1998-03-05 | 1999-09-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Piste conductrice à faibles pertes sur un substrat et procédé pour sa fabrication |
JP3942264B2 (ja) * | 1998-03-11 | 2007-07-11 | 富士通株式会社 | 半導体基板上に形成されるインダクタンス素子 |
JP3214441B2 (ja) | 1998-04-10 | 2001-10-02 | 日本電気株式会社 | 半導体装置及びその製造方法 |
EP0966040A1 (fr) * | 1998-06-19 | 1999-12-22 | International Business Machines Corporation | Composant passif au-dessus des rainures d'isolation |
JP2000022085A (ja) * | 1998-06-29 | 2000-01-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3053613B2 (ja) * | 1998-07-13 | 2000-06-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 集積回路 |
JP2000077610A (ja) * | 1998-09-03 | 2000-03-14 | Hitachi Ltd | インダクタ |
KR100319743B1 (ko) * | 1998-11-24 | 2002-05-09 | 오길록 | 기생 캐패시턴스 및 자장의 간섭을 감소시킬 수 있는 집적소자및 그 제조 방법 |
FR2802700B1 (fr) * | 1999-12-15 | 2002-07-19 | St Microelectronics Sa | Structure d'inductance sur substrat semiconducteur |
JP2001223331A (ja) * | 2000-02-07 | 2001-08-17 | Sony Corp | 半導体装置及びその製造方法 |
JP3488164B2 (ja) * | 2000-02-14 | 2004-01-19 | Necエレクトロニクス株式会社 | 半導体装置 |
JP4969715B2 (ja) | 2000-06-06 | 2012-07-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2000
- 2000-04-19 JP JP2000117720A patent/JP4776752B2/ja not_active Expired - Fee Related
- 2000-10-17 US US09/688,812 patent/US6452249B1/en not_active Expired - Lifetime
- 2000-12-13 FR FR0016209A patent/FR2808122B1/fr not_active Expired - Fee Related
- 2000-12-14 DE DE10062232A patent/DE10062232A1/de not_active Ceased
- 2000-12-16 KR KR10-2000-0077452A patent/KR100404831B1/ko not_active IP Right Cessation
- 2000-12-16 TW TW089127025A patent/TW508794B/zh not_active IP Right Cessation
-
2002
- 2002-07-30 US US10/207,233 patent/US6611041B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6452249B1 (en) | 2002-09-17 |
KR20010098377A (ko) | 2001-11-08 |
TW508794B (en) | 2002-11-01 |
JP4776752B2 (ja) | 2011-09-21 |
FR2808122A1 (fr) | 2001-10-26 |
JP2001308273A (ja) | 2001-11-02 |
DE10062232A1 (de) | 2001-12-20 |
US20020190349A1 (en) | 2002-12-19 |
US6611041B2 (en) | 2003-08-26 |
KR100404831B1 (ko) | 2003-11-07 |
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