FR2831713B1 - Dispositif a semi-conducteur et procede de fabrication - Google Patents
Dispositif a semi-conducteur et procede de fabricationInfo
- Publication number
- FR2831713B1 FR2831713B1 FR0214877A FR0214877A FR2831713B1 FR 2831713 B1 FR2831713 B1 FR 2831713B1 FR 0214877 A FR0214877 A FR 0214877A FR 0214877 A FR0214877 A FR 0214877A FR 2831713 B1 FR2831713 B1 FR 2831713B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001216428 | 2001-07-17 | ||
JP2001299863A JP5000057B2 (ja) | 2001-07-17 | 2001-09-28 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2831713A1 FR2831713A1 (fr) | 2003-05-02 |
FR2831713B1 true FR2831713B1 (fr) | 2005-09-30 |
Family
ID=26618851
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0208965A Expired - Fee Related FR2827708B1 (fr) | 2001-07-17 | 2002-07-16 | Dispositif a semi-conducteur sur substrat soi et procede de fabrication |
FR0214877A Expired - Fee Related FR2831713B1 (fr) | 2001-07-17 | 2002-11-27 | Dispositif a semi-conducteur et procede de fabrication |
FR0214876A Expired - Fee Related FR2831711B1 (fr) | 2001-07-17 | 2002-11-27 | Dispositif a semi-conducteur et procede de fabrication |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0208965A Expired - Fee Related FR2827708B1 (fr) | 2001-07-17 | 2002-07-16 | Dispositif a semi-conducteur sur substrat soi et procede de fabrication |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0214876A Expired - Fee Related FR2831711B1 (fr) | 2001-07-17 | 2002-11-27 | Dispositif a semi-conducteur et procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (3) | US6806537B2 (fr) |
JP (1) | JP5000057B2 (fr) |
KR (1) | KR100491058B1 (fr) |
DE (1) | DE10231928A1 (fr) |
FR (3) | FR2827708B1 (fr) |
TW (1) | TW554535B (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004128121A (ja) * | 2002-10-01 | 2004-04-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2004303789A (ja) * | 2003-03-28 | 2004-10-28 | Toshiba Corp | 半導体装置及びその製造方法 |
DE10324434B4 (de) * | 2003-05-28 | 2005-08-25 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Einstellen der Ätzselektivität durch Anpassen von Aspektverhältnissen bei einem Mehrebenen-Ätzprozess |
JP2005019548A (ja) * | 2003-06-24 | 2005-01-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US6914303B2 (en) * | 2003-08-28 | 2005-07-05 | International Business Machines Corporation | Ultra thin channel MOSFET |
US6906360B2 (en) * | 2003-09-10 | 2005-06-14 | International Business Machines Corporation | Structure and method of making strained channel CMOS transistors having lattice-mismatched epitaxial extension and source and drain regions |
US20050077574A1 (en) * | 2003-10-08 | 2005-04-14 | Chandra Mouli | 1T/0C RAM cell with a wrapped-around gate device structure |
JP4771043B2 (ja) * | 2004-09-06 | 2011-09-14 | 日本電気株式会社 | 薄膜半導体素子及びその駆動回路並びにそれらを用いた装置 |
KR100574297B1 (ko) * | 2004-09-24 | 2006-04-27 | 한국전자통신연구원 | 전계효과 트랜지스터 및 그 제조 방법 |
KR100612418B1 (ko) * | 2004-09-24 | 2006-08-16 | 삼성전자주식회사 | 자기정렬 바디를 갖는 반도체 소자 및 그 제조방법 |
US7135724B2 (en) * | 2004-09-29 | 2006-11-14 | International Business Machines Corporation | Structure and method for making strained channel field effect transistor using sacrificial spacer |
US20060108651A1 (en) * | 2004-11-22 | 2006-05-25 | International Business Machines Corporation | Lowered Source/Drain Transistors |
JP4361880B2 (ja) * | 2005-01-11 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
DE102005002739B4 (de) * | 2005-01-20 | 2010-11-25 | Infineon Technologies Ag | Verfahren zum Herstellen eines Feldeffekttransistors, Tunnel-Feldeffekttransistor und integrierte Schaltungsanordnung mit mindestens einem Feldeffekttransistor |
JP4718894B2 (ja) * | 2005-05-19 | 2011-07-06 | 株式会社東芝 | 半導体装置の製造方法 |
EP1727194A1 (fr) * | 2005-05-27 | 2006-11-29 | Interuniversitair Microelektronica Centrum vzw ( IMEC) | Méthode de formation de motif par topographie haute résolution |
JP2007220755A (ja) | 2006-02-14 | 2007-08-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4664833B2 (ja) * | 2006-02-15 | 2011-04-06 | 株式会社東芝 | 半導体記憶装置 |
US7776726B2 (en) * | 2006-05-04 | 2010-08-17 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
US20080217727A1 (en) * | 2007-03-11 | 2008-09-11 | Skyworks Solutions, Inc. | Radio frequency isolation for SOI transistors |
DE102007030053B4 (de) * | 2007-06-29 | 2011-07-21 | Advanced Micro Devices, Inc., Calif. | Reduzieren der pn-Übergangskapazität in einem Transistor durch Absenken von Drain- und Source-Gebieten |
JP2009065020A (ja) * | 2007-09-07 | 2009-03-26 | Panasonic Corp | 半導体装置及びその製造方法 |
KR100935770B1 (ko) * | 2007-11-26 | 2010-01-06 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조방법 |
US7964897B2 (en) * | 2008-07-22 | 2011-06-21 | Honeywell International Inc. | Direct contact to area efficient body tie process flow |
US8058685B2 (en) * | 2009-07-08 | 2011-11-15 | Force Mos Technology Co., Ltd. | Trench MOSFET structures using three masks process |
KR101922122B1 (ko) | 2012-09-28 | 2018-11-26 | 삼성전자주식회사 | 노멀리 오프 고전자이동도 트랜지스터 |
CN103779212B (zh) * | 2012-10-18 | 2016-11-16 | 中国科学院微电子研究所 | 半导体结构及其制造方法 |
US9379214B2 (en) * | 2014-02-14 | 2016-06-28 | Semi Solutions Llc | Reduced variation MOSFET using a drain-extension-last process |
DE102015211087B4 (de) * | 2015-06-17 | 2019-12-05 | Soitec | Verfahren zur Herstellung eines Hochwiderstands-Halbleiter-auf-Isolator-Substrates |
JP2018148123A (ja) * | 2017-03-08 | 2018-09-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び半導体装置の製造方法 |
FR3069374B1 (fr) * | 2017-07-21 | 2020-01-17 | Stmicroelectronics (Rousset) Sas | Transistor mos a effet bosse reduit |
FR3069376B1 (fr) | 2017-07-21 | 2020-07-03 | Stmicroelectronics (Rousset) Sas | Transistor comprenant une grille elargie |
FR3069377B1 (fr) | 2017-07-21 | 2020-07-03 | Stmicroelectronics (Rousset) Sas | Transistor mos a double blocs de grille a tension de claquage augmentee |
US10374058B2 (en) | 2017-09-15 | 2019-08-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for manufacturing the same |
US11450660B2 (en) * | 2020-04-27 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of fabricating the same |
DE102020126658A1 (de) | 2020-08-31 | 2022-03-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und deren Herstellungsverfahren |
CN113809177A (zh) * | 2020-08-31 | 2021-12-17 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4805071A (en) * | 1987-11-30 | 1989-02-14 | Texas Instruments Incorporated | High voltage capacitor for integrated circuits |
JPH06283612A (ja) * | 1993-03-26 | 1994-10-07 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JPH0823031A (ja) * | 1994-07-05 | 1996-01-23 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2830762B2 (ja) | 1995-01-30 | 1998-12-02 | 日本電気株式会社 | 半導体装置の製造方法 |
US5783850A (en) * | 1995-04-27 | 1998-07-21 | Taiwan Semiconductor Manufacturing Company | Undoped polysilicon gate process for NMOS ESD protection circuits |
US5591650A (en) | 1995-06-08 | 1997-01-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a body contacted SOI MOSFET |
JPH09298297A (ja) * | 1996-04-30 | 1997-11-18 | Ricoh Co Ltd | 半導体装置およびその製造方法 |
US5710078A (en) * | 1996-06-03 | 1998-01-20 | Vanguard International Semiconductor Corporation | Method to improve the contact resistance of bit line metal structures to underlying polycide structures |
US5710054A (en) * | 1996-08-26 | 1998-01-20 | Advanced Micro Devices, Inc. | Method of forming a shallow junction by diffusion from a silicon-based spacer |
FR2757683B1 (fr) * | 1996-12-20 | 1999-03-05 | Sgs Thomson Microelectronics | Transistor bipolaire et capacite |
JP4187808B2 (ja) * | 1997-08-25 | 2008-11-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US6100159A (en) * | 1997-11-06 | 2000-08-08 | Advanced Micro Devices, Inc. | Quasi soi device |
JP3061022B2 (ja) * | 1997-11-27 | 2000-07-10 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6121100A (en) * | 1997-12-31 | 2000-09-19 | Intel Corporation | Method of fabricating a MOS transistor with a raised source/drain extension |
KR100280219B1 (ko) * | 1998-02-26 | 2001-04-02 | 이수빈 | 삼핵산 반복 서열을 이용한 신경정신 질환의 진단 방법 및 진단 시약 |
US6034388A (en) * | 1998-05-15 | 2000-03-07 | International Business Machines Corporation | Depleted polysilicon circuit element and method for producing the same |
US6049114A (en) | 1998-07-20 | 2000-04-11 | Motorola, Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
KR100269336B1 (ko) * | 1998-09-16 | 2000-10-16 | 윤종용 | 전도층이 포함된 게이트 스페이서를 갖는 반도체 소자 및 그 제조방법 |
JP3317248B2 (ja) | 1998-09-18 | 2002-08-26 | 日本電気株式会社 | 固体撮像装置 |
JP2000174268A (ja) * | 1998-12-03 | 2000-06-23 | Nec Corp | 電界効果型トランジスタ及びその製造方法 |
JP2000208714A (ja) * | 1999-01-18 | 2000-07-28 | Sharp Corp | 半導体装置及びその製造方法 |
US6004853A (en) * | 1999-05-27 | 1999-12-21 | Vanguard International Semiconductor Corporation | Method to improve uniformity and the critical dimensions of a DRAM gate structure |
JP2000340794A (ja) | 1999-06-01 | 2000-12-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
WO2001004946A1 (fr) * | 1999-07-08 | 2001-01-18 | Hitachi, Ltd. | Dispositif a semiconducteur et procede de production correspondant |
JP2001036092A (ja) * | 1999-07-23 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置 |
JP2001036080A (ja) * | 1999-07-26 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6180501B1 (en) * | 1999-10-14 | 2001-01-30 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate a double-polysilicon gate structure for a sub-quarter micron self-aligned-titanium silicide process |
US6303447B1 (en) * | 2000-02-11 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an extended metal gate using a damascene process |
US6465294B1 (en) * | 2001-03-16 | 2002-10-15 | Taiwan Semiconductor Manufacturing Company | Self-aligned process for a stacked gate RF MOSFET device |
US6518631B1 (en) * | 2001-04-02 | 2003-02-11 | Advanced Micro Devices, Inc. | Multi-Thickness silicide device formed by succesive spacers |
-
2001
- 2001-09-28 JP JP2001299863A patent/JP5000057B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-25 KR KR10-2002-0035609A patent/KR100491058B1/ko not_active IP Right Cessation
- 2002-07-11 TW TW091115397A patent/TW554535B/zh not_active IP Right Cessation
- 2002-07-11 US US10/192,657 patent/US6806537B2/en not_active Expired - Lifetime
- 2002-07-15 DE DE10231928A patent/DE10231928A1/de not_active Ceased
- 2002-07-16 FR FR0208965A patent/FR2827708B1/fr not_active Expired - Fee Related
- 2002-11-27 FR FR0214877A patent/FR2831713B1/fr not_active Expired - Fee Related
- 2002-11-27 FR FR0214876A patent/FR2831711B1/fr not_active Expired - Fee Related
-
2004
- 2004-06-15 US US10/866,701 patent/US7109553B2/en not_active Expired - Lifetime
-
2006
- 2006-08-14 US US11/503,156 patent/US20060273394A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7109553B2 (en) | 2006-09-19 |
FR2831713A1 (fr) | 2003-05-02 |
US20030025135A1 (en) | 2003-02-06 |
FR2831711A1 (fr) | 2003-05-02 |
US6806537B2 (en) | 2004-10-19 |
FR2827708A1 (fr) | 2003-01-24 |
KR100491058B1 (ko) | 2005-05-24 |
FR2827708B1 (fr) | 2005-05-13 |
KR20030007004A (ko) | 2003-01-23 |
DE10231928A1 (de) | 2003-02-06 |
US20060273394A1 (en) | 2006-12-07 |
TW554535B (en) | 2003-09-21 |
FR2831711B1 (fr) | 2005-09-30 |
JP2003101030A (ja) | 2003-04-04 |
JP5000057B2 (ja) | 2012-08-15 |
US20040222465A1 (en) | 2004-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2831713B1 (fr) | Dispositif a semi-conducteur et procede de fabrication | |
FR2805394B1 (fr) | Dispositif a semiconducteur et procede de fabrication | |
FR2821209B1 (fr) | Dispositif a semiconducteur a effet de champ et procede de fabrication | |
FR2798223B1 (fr) | Dispositif a semiconducteur et procede de fabrication de celui-ci | |
FR2808122B1 (fr) | Dispositif a semiconducteurs et procede pour sa fabrication | |
DE60238583D1 (de) | Herstellungsverfahren eines Halbleiterbauelements | |
FR2796757B1 (fr) | Procede de fabrication de substrat soi et dispositif a semiconducteur | |
GB0203784D0 (en) | Method of manufacturing a semiconductor device | |
SG103846A1 (en) | A method of manufacturing a semiconductor device | |
SG118117A1 (en) | Semiconductor device and manufacturing method thereof | |
FR2858112B1 (fr) | Dispositif a semi conducteur, procede de fabrication du dispositif a semiconducteur et circuit integre incluant le dispositif a semiconducteur | |
SG121710A1 (en) | Semiconductor device and fabrication method thereof | |
DE60019913D1 (de) | Halbleiterbauelement und Herstellungsverfahren | |
DE60039545D1 (de) | Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode | |
AU2003255926A8 (en) | Optoelectronic semiconductor device and method of manufacturing such a device | |
MA26301A1 (fr) | Procede et dispositif pour la fabrication de poils | |
FR2858714B1 (fr) | Procede de fabrication d'un dispositif a semi-conducteur | |
FR2849271B1 (fr) | Dispositif a semiconducteur du type a separation dielectrique et procede de fabrication | |
GB2393325B (en) | Semiconductor device and manufacturing method thereof | |
DE60230840D1 (de) | Halbleiteranordnung und Herstellungsverfahren dafür | |
SG114530A1 (en) | Method of manufacturing a semiconductor device | |
FR2841381B1 (fr) | Circuit integre a semi-conducteur et un procede de fabrication du circuit | |
SG114529A1 (en) | Method of manufacturing a semiconductor device | |
FR2819939B1 (fr) | Dispositif a semiconducteur a structure soi et procede de fabrication | |
FR2822045B1 (fr) | Dispositif de nettoyage multi-couches cellulaire et procede de fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100331 |