FR3069376B1 - Transistor comprenant une grille elargie - Google Patents

Transistor comprenant une grille elargie Download PDF

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Publication number
FR3069376B1
FR3069376B1 FR1756936A FR1756936A FR3069376B1 FR 3069376 B1 FR3069376 B1 FR 3069376B1 FR 1756936 A FR1756936 A FR 1756936A FR 1756936 A FR1756936 A FR 1756936A FR 3069376 B1 FR3069376 B1 FR 3069376B1
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FR
France
Prior art keywords
transistor including
region
enlarged grid
grid
active area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1756936A
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English (en)
Other versions
FR3069376A1 (fr
Inventor
Julien Delalleau
Christian Rivero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1756936A priority Critical patent/FR3069376B1/fr
Priority to US16/036,453 priority patent/US10797158B2/en
Publication of FR3069376A1 publication Critical patent/FR3069376A1/fr
Application granted granted Critical
Publication of FR3069376B1 publication Critical patent/FR3069376B1/fr
Priority to US17/009,293 priority patent/US11270886B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H01L21/28132—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H01L29/66598—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET forming drain [D] and lightly doped drain [LDD] simultaneously, e.g. using implantation through the wings a T-shaped layer, or through a specially shaped layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Abstract

Circuit intégré (CI) comprenant au moins un transistor MOS (T1) réalisé sur et dans une zone active comportant une région de source, une région de drain et ayant une largeur (W) comptée transversalement à la direction source-drain, le transistor ayant une région de grille (14) comprenant à son pied au moins une marche (17) qui s'étend au moins sur toute la largeur de la zone active.
FR1756936A 2017-07-21 2017-07-21 Transistor comprenant une grille elargie Expired - Fee Related FR3069376B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1756936A FR3069376B1 (fr) 2017-07-21 2017-07-21 Transistor comprenant une grille elargie
US16/036,453 US10797158B2 (en) 2017-07-21 2018-07-16 Transistor comprising a lengthened gate
US17/009,293 US11270886B2 (en) 2017-07-21 2020-09-01 Transistor comprising a lengthened gate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1756936 2017-07-21
FR1756936A FR3069376B1 (fr) 2017-07-21 2017-07-21 Transistor comprenant une grille elargie

Publications (2)

Publication Number Publication Date
FR3069376A1 FR3069376A1 (fr) 2019-01-25
FR3069376B1 true FR3069376B1 (fr) 2020-07-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1756936A Expired - Fee Related FR3069376B1 (fr) 2017-07-21 2017-07-21 Transistor comprenant une grille elargie

Country Status (2)

Country Link
US (2) US10797158B2 (fr)
FR (1) FR3069376B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111293127B (zh) * 2020-02-25 2022-04-26 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法

Family Cites Families (29)

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US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
DE19626089C2 (de) 1996-06-28 2002-01-31 Siemens Ag Speicherzelle und Verfahren zu ihrer Herstellung
KR100239459B1 (ko) 1996-12-26 2000-01-15 김영환 반도체 메모리 소자 및 그 제조방법
US6004852A (en) * 1997-02-11 1999-12-21 United Microelectronics Corp. Manufacture of MOSFET having LDD source/drain region
US5837588A (en) * 1998-01-26 1998-11-17 Texas Instruments-Acer Incorporated Method for forming a semiconductor device with an inverse-T gate lightly-doped drain structure
US5986305A (en) * 1998-03-30 1999-11-16 Texas Instruments - Acer Incorporated Semiconductor device with an inverse-T gate lightly-doped drain structure
US6346467B1 (en) 1999-09-02 2002-02-12 Advanced Micro Devices, Inc. Method of making tungsten gate MOS transistor and memory cell by encapsulating
JP2001326289A (ja) 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 不揮発性メモリおよび半導体装置
JP3594550B2 (ja) 2000-11-27 2004-12-02 シャープ株式会社 半導体装置の製造方法
FR2826496A1 (fr) 2001-06-25 2002-12-27 St Microelectronics Sa Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces
JP4790166B2 (ja) 2001-07-05 2011-10-12 Ｏｋｉセミコンダクタ株式会社 保護トランジスタ
JP5000057B2 (ja) 2001-07-17 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
EP1501130A1 (fr) 2003-07-21 2005-01-26 STMicroelectronics S.r.l. Dispositif semi-conducteur du type MOS et son procédé de fabrication
JP2007524242A (ja) * 2004-02-19 2007-08-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置の製造方法
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Also Published As

Publication number Publication date
FR3069376A1 (fr) 2019-01-25
US20190027581A1 (en) 2019-01-24
US11270886B2 (en) 2022-03-08
US20200395466A1 (en) 2020-12-17
US10797158B2 (en) 2020-10-06

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