ATE550785T1 - Halbleitervorrichtung mit einem feldeffekttransistor - Google Patents
Halbleitervorrichtung mit einem feldeffekttransistorInfo
- Publication number
- ATE550785T1 ATE550785T1 AT10162504T AT10162504T ATE550785T1 AT E550785 T1 ATE550785 T1 AT E550785T1 AT 10162504 T AT10162504 T AT 10162504T AT 10162504 T AT10162504 T AT 10162504T AT E550785 T1 ATE550785 T1 AT E550785T1
- Authority
- AT
- Austria
- Prior art keywords
- device region
- substrate
- semiconductor layer
- compound semiconductor
- electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009207442A JP2011060912A (ja) | 2009-09-08 | 2009-09-08 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE550785T1 true ATE550785T1 (de) | 2012-04-15 |
Family
ID=43302088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10162504T ATE550785T1 (de) | 2009-09-08 | 2010-05-11 | Halbleitervorrichtung mit einem feldeffekttransistor |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110057235A1 (de) |
EP (1) | EP2293335B1 (de) |
JP (1) | JP2011060912A (de) |
AT (1) | ATE550785T1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8772832B2 (en) * | 2010-06-04 | 2014-07-08 | Hrl Laboratories, Llc | GaN HEMTs with a back gate connected to the source |
JP5707786B2 (ja) * | 2010-08-31 | 2015-04-30 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2012230991A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
KR101813180B1 (ko) * | 2011-06-28 | 2017-12-29 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
US8575657B2 (en) * | 2012-03-20 | 2013-11-05 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for GaN HEMT devices |
EP2741324B1 (de) * | 2012-12-10 | 2018-10-31 | IMEC vzw | III-Nitrid-Transistor mit einer mit dem Source verbundenen wärmeableitenden Platte und Verfahren zur Herstellung des Transistors |
JP2015041638A (ja) * | 2013-08-20 | 2015-03-02 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6156015B2 (ja) * | 2013-09-24 | 2017-07-05 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
DE102014107560A1 (de) | 2014-05-28 | 2015-12-03 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren |
CN104241351B (zh) * | 2014-09-05 | 2018-04-20 | 电子科技大学 | 具有体内复合场板结构的氮化镓基异质结场效应管 |
US10069002B2 (en) | 2016-07-20 | 2018-09-04 | Semiconductor Components Industries, Llc | Bond-over-active circuity gallium nitride devices |
US10388743B2 (en) * | 2016-10-17 | 2019-08-20 | Zhanming LI | Power electronic and optoelectronic devices with interdigitated electrodes |
US10163707B2 (en) * | 2017-05-19 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming group III-V device structure |
JP6764375B2 (ja) * | 2017-06-26 | 2020-09-30 | 日本電信電話株式会社 | 電界効果型トランジスタ |
JP6809615B2 (ja) * | 2017-09-01 | 2021-01-06 | 三菱電機株式会社 | 電界効果トランジスタ |
CN108231882A (zh) * | 2018-03-02 | 2018-06-29 | 华南理工大学 | 具有背场板结构的hemt器件及其制备方法 |
TWI683370B (zh) * | 2019-03-12 | 2020-01-21 | 環球晶圓股份有限公司 | 半導體元件及其製造方法 |
DE102021205315A1 (de) | 2021-05-26 | 2022-12-01 | Robert Bosch Gesellschaft mit beschränkter Haftung | Membran-halbleiterbauelement und verfahren zum herstellen desselben |
CN113793806A (zh) * | 2021-11-16 | 2021-12-14 | 深圳市时代速信科技有限公司 | 一种半导体器件及制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5236854A (en) * | 1989-12-11 | 1993-08-17 | Yukio Higaki | Compound semiconductor device and method for fabrication thereof |
JP2004356570A (ja) * | 2003-05-30 | 2004-12-16 | Sony Corp | 電界効果型トランジスタ及び同電界効果型トランジスタを搭載した半導体装置 |
JP2006156658A (ja) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | 半導体装置 |
JP2007059595A (ja) * | 2005-08-24 | 2007-03-08 | Toshiba Corp | 窒化物半導体素子 |
JP2008078486A (ja) * | 2006-09-22 | 2008-04-03 | Oki Electric Ind Co Ltd | 半導体素子 |
JP5022683B2 (ja) * | 2006-11-30 | 2012-09-12 | 株式会社東芝 | 半導体装置の製造方法 |
US8026581B2 (en) * | 2008-02-05 | 2011-09-27 | International Rectifier Corporation | Gallium nitride material devices including diamond regions and methods associated with the same |
US8043965B2 (en) * | 2009-02-11 | 2011-10-25 | Northrop Grumann Systems Corporation | Method of forming a through substrate via in a compound semiconductor |
-
2009
- 2009-09-08 JP JP2009207442A patent/JP2011060912A/ja active Pending
-
2010
- 2010-05-11 AT AT10162504T patent/ATE550785T1/de active
- 2010-05-11 US US12/777,590 patent/US20110057235A1/en not_active Abandoned
- 2010-05-11 EP EP10162504A patent/EP2293335B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
EP2293335A3 (de) | 2011-08-03 |
EP2293335A2 (de) | 2011-03-09 |
JP2011060912A (ja) | 2011-03-24 |
EP2293335B1 (de) | 2012-03-21 |
US20110057235A1 (en) | 2011-03-10 |
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