SG10201804909VA - Chip structure including heating element - Google Patents

Chip structure including heating element

Info

Publication number
SG10201804909VA
SG10201804909VA SG10201804909VA SG10201804909VA SG10201804909VA SG 10201804909V A SG10201804909V A SG 10201804909VA SG 10201804909V A SG10201804909V A SG 10201804909VA SG 10201804909V A SG10201804909V A SG 10201804909VA SG 10201804909V A SG10201804909V A SG 10201804909VA
Authority
SG
Singapore
Prior art keywords
chip structure
heating element
structure including
including heating
structure includes
Prior art date
Application number
SG10201804909VA
Inventor
Woo Hyun Park
Jae Choon Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201804909VA publication Critical patent/SG10201804909VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

A chip structure is provided. The chip structure includes: a first lower chip structure; and an upper chip structure on the first lower chip structure and having a pixel array region. The first lower chip structure includes: a first lower semiconductor substrate having a first side and a second side opposing each other; a first portion on the first side of the first lower semiconductor substrate; and a second portion on the second side of the first lower semiconductor substrate, the first portion of the first lower chip structure includes a gate wiring, the second portion of the first lower chip structure includes a second side wiring and a heating element, and the heating element is on the same plane as that of the second side wiring and has a length greater than that of the second side wiring. [FIG. ] 34
SG10201804909VA 2017-08-16 2018-06-08 Chip structure including heating element SG10201804909VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170103828A KR102380823B1 (en) 2017-08-16 2017-08-16 Chip structure including heating element

Publications (1)

Publication Number Publication Date
SG10201804909VA true SG10201804909VA (en) 2019-03-28

Family

ID=65234881

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804909VA SG10201804909VA (en) 2017-08-16 2018-06-08 Chip structure including heating element

Country Status (6)

Country Link
US (2) US10553513B2 (en)
JP (1) JP7011988B2 (en)
KR (1) KR102380823B1 (en)
CN (1) CN109411489B (en)
DE (1) DE102018119609B4 (en)
SG (1) SG10201804909VA (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535643B2 (en) 2017-08-04 2020-01-14 Samsung Electronics Co., Ltd. Connection system of semiconductor packages using a printed circuit board
TW202315106A (en) * 2017-10-30 2023-04-01 日商索尼半導體解決方案公司 Solid-state imaging device, and electronic apparatus
JP2019165312A (en) * 2018-03-19 2019-09-26 ソニーセミコンダクタソリューションズ株式会社 Imaging apparatus and electronic apparatus

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63311758A (en) * 1987-06-15 1988-12-20 Fuji Xerox Co Ltd Image pick-up sensor
JPH05206423A (en) 1992-01-27 1993-08-13 Sony Corp Solid-state image sensing device
JP2000101057A (en) * 1998-09-18 2000-04-07 Canon Inc Sensor panel device
KR100781494B1 (en) 2001-12-29 2007-11-30 매그나칩 반도체 유한회사 Image sensor chip
US7480006B1 (en) 2004-04-13 2009-01-20 Pixim, Inc. Optical package for image sensor with integrated heater
JP2007081094A (en) * 2005-09-14 2007-03-29 Seiko Epson Corp Light emitting apparatus and electronic appliance
JP4160083B2 (en) 2006-04-11 2008-10-01 シャープ株式会社 Optical device module and method of manufacturing optical device module
US7361989B1 (en) 2006-09-26 2008-04-22 International Business Machines Corporation Stacked imager package
US20080173792A1 (en) 2007-01-23 2008-07-24 Advanced Chip Engineering Technology Inc. Image sensor module and the method of the same
JP2008236158A (en) * 2007-03-19 2008-10-02 Olympus Imaging Corp Imaging module
TWI332790B (en) * 2007-06-13 2010-11-01 Ind Tech Res Inst Image sensor module with a three-dimensional dies-stacking structure
DE102010040068A1 (en) * 2010-08-31 2012-03-01 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Evaluation of the thermal-mechanical properties of complex semiconductor devices by integrated heating systems
CN102024782B (en) 2010-10-12 2012-07-25 北京大学 Three-dimensional vertical interconnecting structure and manufacturing method thereof
US20120194719A1 (en) * 2011-02-01 2012-08-02 Scott Churchwell Image sensor units with stacked image sensors and image processors
WO2012114400A1 (en) 2011-02-21 2012-08-30 パナソニック株式会社 Integrated circuit
JP5594198B2 (en) * 2011-03-16 2014-09-24 富士通株式会社 Electronic component and electronic component assembling apparatus
JP5794002B2 (en) 2011-07-07 2015-10-14 ソニー株式会社 Solid-state imaging device, electronic equipment
JP2013070249A (en) 2011-09-22 2013-04-18 Kyocera Corp Image sensor
JP6214132B2 (en) * 2012-02-29 2017-10-18 キヤノン株式会社 Photoelectric conversion device, imaging system, and method of manufacturing photoelectric conversion device
JP6123170B2 (en) * 2012-05-01 2017-05-10 株式会社ニコン Imaging device and imaging apparatus
KR101439191B1 (en) 2013-06-10 2014-09-12 한국과학기술원 Interposer, method for manufacturing the same, 3-dimensional integrated circuit, 3-dimensional integrated circuit chip package
JP2015012211A (en) * 2013-07-01 2015-01-19 株式会社ニコン Imaging unit and imaging device
JP6314477B2 (en) 2013-12-26 2018-04-25 ソニー株式会社 Electronic devices
JP6424610B2 (en) 2014-04-23 2018-11-21 ソニー株式会社 Semiconductor device and manufacturing method
JP2015216226A (en) * 2014-05-09 2015-12-03 キヤノン株式会社 Housing member, electronic component, imaging device and method for removing condensation
EP2950525B1 (en) * 2014-05-28 2020-08-12 ams AG Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
KR102472566B1 (en) * 2015-12-01 2022-12-01 삼성전자주식회사 Semiconductor package
KR102473664B1 (en) * 2016-01-19 2022-12-02 삼성전자주식회사 Multi-Stacked Device Having a TSV Structure
JP6826467B2 (en) * 2017-03-10 2021-02-03 ルネサスエレクトロニクス株式会社 Electronic device

Also Published As

Publication number Publication date
US20200161201A1 (en) 2020-05-21
JP7011988B2 (en) 2022-01-27
CN109411489B (en) 2023-10-10
KR20190019256A (en) 2019-02-27
JP2019036728A (en) 2019-03-07
DE102018119609B4 (en) 2023-09-14
US20190057918A1 (en) 2019-02-21
KR102380823B1 (en) 2022-04-01
US11004760B2 (en) 2021-05-11
US10553513B2 (en) 2020-02-04
CN109411489A (en) 2019-03-01
DE102018119609A1 (en) 2019-02-21

Similar Documents

Publication Publication Date Title
SG10201805116YA (en) Semiconductor devices and manufacturing methods thereof
TW201714253A (en) Method of making embedded memory device with silicon-on-insulator substrate
SG10201805477YA (en) Semiconductor device
SG10201805426YA (en) Three-dimensional semiconductor device
GB2571652A (en) Vertical transistors with merged active area regions
TW201613098A (en) Semiconductor device
SG10201805060XA (en) Semiconductor device and method of manufacturing the same
SG10201803428WA (en) Integrated circuit device and method of manufacturing the same
TW201614747A (en) Wire bond sensor package and method
SG10201804119SA (en) Non-volatile memory devices and methods of fabricating the same
SG10201803738UA (en) Semiconductor device
MY193320A (en) Integrated circuit die having backside passive components and methods associated therewith
SG10201804609UA (en) Semiconductor device and manufacturing method thereof
SG10201804042RA (en) Semiconductor Memory Devices
EP3891806A4 (en) Unified semiconductor devices having processor and heterogeneous memories and methods for forming the same
SG11201907932UA (en) Semiconductor memory device
TWI800679B (en) Semiconductor package and antenna module including the same
EP2846358A3 (en) Semiconductor device and manufacturing method thereof
GB2533063A (en) Structures and methods with reduced sensitivity to surface charge
SG10201804909VA (en) Chip structure including heating element
WO2015044621A3 (en) Optoelectronic device comprising light-emitting diodes
TW201613060A (en) Semiconductor device having terminals formed on a chip package including a plurality of semiconductor chips and manufacturing method thereof
GB2512553A (en) Semiconductor arrangement with active drift zone
SG10201805091VA (en) Semiconductor package and method of manufacturing the same
SG10201805399SA (en) Semiconductor device