SG10201804042RA - Semiconductor Memory Devices - Google Patents
Semiconductor Memory DevicesInfo
- Publication number
- SG10201804042RA SG10201804042RA SG10201804042RA SG10201804042RA SG10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA SG 10201804042R A SG10201804042R A SG 10201804042RA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor memory
- trench
- memory devices
- gate electrode
- electrode portion
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
Abstract
Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided. FIG. 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170101835A KR102358460B1 (en) | 2017-08-10 | 2017-08-10 | Semiconductor memory device and method of forming the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201804042RA true SG10201804042RA (en) | 2019-03-28 |
Family
ID=65084548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201804042RA SG10201804042RA (en) | 2017-08-10 | 2018-05-14 | Semiconductor Memory Devices |
Country Status (6)
Country | Link |
---|---|
US (3) | US10615164B2 (en) |
JP (1) | JP7323991B2 (en) |
KR (1) | KR102358460B1 (en) |
CN (1) | CN109390340B (en) |
DE (1) | DE102018110956B4 (en) |
SG (1) | SG10201804042RA (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10727232B2 (en) * | 2018-11-07 | 2020-07-28 | Applied Materials, Inc. | Dram and method of making |
KR20210003997A (en) * | 2019-07-02 | 2021-01-13 | 삼성전자주식회사 | Semiconductor device and manufacturing method thereof |
KR20210048700A (en) * | 2019-10-24 | 2021-05-04 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the semiconductor device |
CN113594237B (en) * | 2020-04-30 | 2023-09-26 | 长鑫存储技术有限公司 | Buried gate manufacturing method and semiconductor device manufacturing method |
US11862697B2 (en) | 2020-04-30 | 2024-01-02 | Changxin Memory Technologies, Inc. | Method for manufacturing buried gate and method for manufacturing semiconductor device |
US11056175B1 (en) * | 2020-07-28 | 2021-07-06 | Winbond Electronics Corp. | Semiconductor device and manufacturing method thereof |
KR20220152339A (en) | 2020-08-05 | 2022-11-15 | 창신 메모리 테크놀로지즈 아이엔씨 | Semiconductor structures and methods of manufacturing semiconductor structures |
CN116113237A (en) * | 2020-08-18 | 2023-05-12 | 长鑫存储技术有限公司 | Memory and manufacturing method thereof |
KR20220131227A (en) * | 2021-03-18 | 2022-09-27 | 창신 메모리 테크놀로지즈 아이엔씨 | Methods of manufacturing semiconductor structures and semiconductor structures |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW412862B (en) * | 1997-06-30 | 2000-11-21 | Hitachi Ltd | Method for fabricating semiconductor integrated circuit device |
US7902597B2 (en) | 2006-03-22 | 2011-03-08 | Samsung Electronics Co., Ltd. | Transistors with laterally extended active regions and methods of fabricating same |
KR100724575B1 (en) * | 2006-06-28 | 2007-06-04 | 삼성전자주식회사 | Semiconductor device having buried gate electrode and method of fabricating the same |
KR100954116B1 (en) | 2006-11-06 | 2010-04-23 | 주식회사 하이닉스반도체 | Method for forming recess pattern in semiconductor device |
US20080150013A1 (en) | 2006-12-22 | 2008-06-26 | Alpha & Omega Semiconductor, Ltd | Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer |
KR101374335B1 (en) | 2007-09-10 | 2014-03-17 | 삼성전자주식회사 | Method of forming recess channel transistor having locally thick dielectrics and related device |
KR101529867B1 (en) * | 2008-10-27 | 2015-06-18 | 삼성전자주식회사 | Semiconductor device with have buried gate electrode and isolation layer using salf aligned double patterning technology and a method for manufacturing the same |
KR20100106017A (en) * | 2009-03-23 | 2010-10-01 | 삼성전자주식회사 | Recess channel transistor and method of manufacturing the same |
KR101105433B1 (en) * | 2009-07-03 | 2012-01-17 | 주식회사 하이닉스반도체 | Semiconductor device with buried gate and method for manufacturing the same |
US8487369B2 (en) * | 2009-10-30 | 2013-07-16 | Hynix Semiconductor Inc. | Semiconductor device with buried gates and buried bit lines and method for fabricating the same |
JP2011192800A (en) * | 2010-03-15 | 2011-09-29 | Elpida Memory Inc | Semiconductor device and method for manufacturing the same |
US9570404B2 (en) | 2011-04-28 | 2017-02-14 | Alpha And Omega Semiconductor Incorporated | Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application |
KR20140036823A (en) | 2012-09-18 | 2014-03-26 | 삼성전자주식회사 | Method for fabricating semiconductor device |
KR101847630B1 (en) * | 2013-04-01 | 2018-05-24 | 삼성전자주식회사 | Semiconductor device and semiconductor module |
KR101966277B1 (en) * | 2013-07-31 | 2019-08-13 | 에스케이하이닉스 주식회사 | Seminconductor having passing gate and method of the same |
JP2015079865A (en) | 2013-10-17 | 2015-04-23 | マイクロン テクノロジー, インク. | Semiconductor device and manufacturing method of the same |
KR102125749B1 (en) * | 2013-12-27 | 2020-07-09 | 삼성전자 주식회사 | Semiconductor device and method for fabricating the same |
US9147729B2 (en) | 2014-02-25 | 2015-09-29 | Micron Technology, Inc. | Methods of forming transistors |
US20150255614A1 (en) | 2014-03-05 | 2015-09-10 | Powerchip Technology Corporation | Split gate flash memory and manufacturing method thereof |
KR102164542B1 (en) * | 2014-05-21 | 2020-10-12 | 삼성전자 주식회사 | Semiconductor Devices Having Buried Gate Structures and Methods of the Same |
KR102162733B1 (en) | 2014-05-29 | 2020-10-07 | 에스케이하이닉스 주식회사 | Dual work function bruied gate type transistor, method for manufacturing the same and electronic device having the same |
US9269779B2 (en) | 2014-07-21 | 2016-02-23 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having a shield electrode structure |
JP6164372B2 (en) | 2014-09-17 | 2017-07-19 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
KR102202603B1 (en) | 2014-09-19 | 2021-01-14 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
KR102250583B1 (en) | 2014-12-16 | 2021-05-12 | 에스케이하이닉스 주식회사 | Semiconductor device having dual work function gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same |
US20160284640A1 (en) | 2015-03-25 | 2016-09-29 | Inotera Memories, Inc. | Semiconductor device having buried wordlines |
KR20170101835A (en) | 2017-06-08 | 2017-09-06 | 주식회사 티맥스데이터 | Method, server and computer program stored in computer readable medium for synchronizing query result |
-
2017
- 2017-08-10 KR KR1020170101835A patent/KR102358460B1/en active IP Right Grant
-
2018
- 2018-04-13 US US15/952,308 patent/US10615164B2/en active Active
- 2018-05-08 DE DE102018110956.3A patent/DE102018110956B4/en active Active
- 2018-05-14 SG SG10201804042RA patent/SG10201804042RA/en unknown
- 2018-07-23 JP JP2018137333A patent/JP7323991B2/en active Active
- 2018-08-09 CN CN201810901544.3A patent/CN109390340B/en active Active
-
2020
- 2020-03-16 US US16/820,006 patent/US10991699B2/en active Active
-
2021
- 2021-04-26 US US17/240,486 patent/US11785761B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN109390340A (en) | 2019-02-26 |
JP7323991B2 (en) | 2023-08-09 |
US11785761B2 (en) | 2023-10-10 |
US20200219885A1 (en) | 2020-07-09 |
KR20190018085A (en) | 2019-02-21 |
DE102018110956A1 (en) | 2019-02-14 |
US10991699B2 (en) | 2021-04-27 |
KR102358460B1 (en) | 2022-02-07 |
US10615164B2 (en) | 2020-04-07 |
DE102018110956B4 (en) | 2021-10-07 |
JP2019036720A (en) | 2019-03-07 |
US20210249417A1 (en) | 2021-08-12 |
CN109390340B (en) | 2024-03-15 |
US20190051652A1 (en) | 2019-02-14 |
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