SG10201807790YA - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
SG10201807790YA
SG10201807790YA SG10201807790YA SG10201807790YA SG10201807790YA SG 10201807790Y A SG10201807790Y A SG 10201807790YA SG 10201807790Y A SG10201807790Y A SG 10201807790YA SG 10201807790Y A SG10201807790Y A SG 10201807790YA SG 10201807790Y A SG10201807790Y A SG 10201807790YA
Authority
SG
Singapore
Prior art keywords
threshold voltage
channels
pattern
voltage control
control pattern
Prior art date
Application number
SG10201807790YA
Inventor
Kim Jae-Jung
Lee Dong-Soo
Kim Sang-Yong
Jang Jin-Kyu
CHUNG Won-Keun
Hyun Sang-Jin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201807790YA publication Critical patent/SG10201807790YA/en

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Classifications

    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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    • H01L21/8232—Field-effect technology
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Abstract

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction 5 metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second 10 workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern. FIG. 3A 15
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Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102316293B1 (en) * 2017-09-18 2021-10-22 삼성전자주식회사 Semiconductor devices
US11062959B2 (en) * 2018-03-19 2021-07-13 International Business Machines Corporation Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors
CN110970432A (en) * 2018-09-28 2020-04-07 芯恩（青岛）集成电路有限公司 Fully-enclosed gate nanosheet complementary inverter structure and manufacturing method thereof
US11133305B2 (en) * 2019-05-15 2021-09-28 International Business Machines Corporation Nanosheet P-type transistor with oxygen reservoir
US11245022B2 (en) * 2019-05-24 2022-02-08 Applied Materials, Inc. Integrated dipole flow for transistor
US11862637B2 (en) * 2019-06-19 2024-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Tie off device
KR20210011558A (en) 2019-07-22 2021-02-02 삼성전자주식회사 Semiconductor device
JP6950096B2 (en) * 2019-09-13 2021-10-13 株式会社日立ハイテク Manufacturing method of semiconductor equipment and plasma processing equipment
US11031292B2 (en) * 2019-09-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US11417653B2 (en) * 2019-09-30 2022-08-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method for forming the same
US20210118874A1 (en) * 2019-10-21 2021-04-22 Nanya Technology Corporation Semiconductor device and method for fabricating the same
US20210126018A1 (en) * 2019-10-24 2021-04-29 International Business Machines Corporation Gate stack quality for gate-all-around field-effect transistors
US11502168B2 (en) * 2019-10-30 2022-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Tuning threshold voltage in nanosheet transitor devices
US11410889B2 (en) * 2019-12-31 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11152264B2 (en) * 2020-01-08 2021-10-19 International Business Machines Corporation Multi-Vt scheme with same dipole thickness for gate-all-around transistors
US11183584B2 (en) * 2020-01-17 2021-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11610822B2 (en) * 2020-01-31 2023-03-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for tuning threshold voltage
US11799019B2 (en) * 2020-02-27 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Gate isolation feature and manufacturing method thereof
US11594614B2 (en) * 2020-03-30 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. P-metal gate first gate replacement process for multigate devices
US11495661B2 (en) * 2020-04-07 2022-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including gate barrier layer
DE102021108598A1 (en) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. HETEROSTRUCTURAL OXIDE SEMICONDUCTOR TRANSISTOR WITH VERTICAL GATE-ALL-AROUND (VGAA) AND PROCESS FOR THE PRODUCTION OF IT
US20210399104A1 (en) * 2020-06-17 2021-12-23 Taiwan Semiconductor Manufacturing Co., Ltd. Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering
US11735669B2 (en) * 2020-07-30 2023-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically-oriented complementary transistor
US11810960B2 (en) * 2020-07-31 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Contact structures in semiconductor devices
CN112185892B (en) * 2020-09-09 2023-04-07 中国科学院微电子研究所 Semiconductor device and manufacturing method thereof, integrated circuit and electronic equipment
KR20220034574A (en) * 2020-09-11 2022-03-18 삼성전자주식회사 Semiconductor device
US11791216B2 (en) 2020-09-15 2023-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nanostructure field-effect transistor device and method of forming
US20220093648A1 (en) * 2020-09-23 2022-03-24 Intel Corporation Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer
US20220093596A1 (en) * 2020-09-23 2022-03-24 Intel Corporation Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer
US11728401B2 (en) * 2020-10-30 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structures and methods thereof
US11387342B1 (en) 2020-12-18 2022-07-12 International Business Machines Corporation Multi threshold voltage for nanosheet
US20220199620A1 (en) * 2020-12-18 2022-06-23 Intel Corporation Ribbon or wire transistor stack with selective dipole threshold voltage shifter
US20220199472A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Dipole threshold voltage tuning for high voltage transistor stacks
CN112687626B (en) * 2020-12-24 2023-01-03 中国科学院微电子研究所 CFET structure, preparation method thereof and semiconductor device applying CFET structure
US20220320089A1 (en) * 2021-03-31 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Multiple patterning gate scheme for nanosheet rule scaling
US11784225B2 (en) * 2021-08-30 2023-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
US20230071699A1 (en) * 2021-09-09 2023-03-09 Intel Corporation Gate end cap and boundary placement in transistor structures for n-metal oxide semiconductor (n-mos) performance tuning
US20230209799A1 (en) * 2021-12-23 2023-06-29 Intel Corporation Sram with dipole dopant threshold voltage modulation for greater read stability

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1274009C (en) * 1994-06-15 2006-09-06 精工爱普生株式会社 Method for making thin-film semicondcutor device
US6448590B1 (en) * 2000-10-24 2002-09-10 International Business Machines Corporation Multiple threshold voltage FET using multiple work-function gate materials
US6861712B2 (en) * 2003-01-15 2005-03-01 Sharp Laboratories Of America, Inc. MOSFET threshold voltage tuning with metal gate stack control
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
KR100604908B1 (en) * 2004-10-11 2006-07-28 삼성전자주식회사 CMOS semiconductor device with a thin-body channel comprising dual gate dielectric layers and method of manufacturing the same
US20060214233A1 (en) * 2005-03-22 2006-09-28 Ananthanarayanan Hari P FinFET semiconductor device
KR100699839B1 (en) * 2005-04-21 2007-03-27 삼성전자주식회사 Semiconductor device having multi-channel and Method of manufacturing the same
US7488656B2 (en) * 2005-04-29 2009-02-10 International Business Machines Corporation Removal of charged defects from metal oxide-gate stacks
US7385251B2 (en) * 2006-01-18 2008-06-10 International Business Machines Corporation Area-efficient gated diode structure and method of forming same
KR101551901B1 (en) * 2008-12-31 2015-09-09 삼성전자주식회사 Semiconductor memory devices and methods of forming the same
WO2011068016A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101815527B1 (en) * 2010-10-07 2018-01-05 삼성전자주식회사 Semiconductor device and method for manufacturing the same
JP2012156237A (en) * 2011-01-25 2012-08-16 Toshiba Corp Method of manufacturing semiconductor storage device and semiconductor storage device
US9082702B2 (en) 2012-02-27 2015-07-14 Applied Materials, Inc. Atomic layer deposition methods for metal gate electrodes
US9105498B2 (en) * 2012-03-01 2015-08-11 International Business Machines Corporation Gate strain induced work function engineering
KR20130127257A (en) * 2012-05-14 2013-11-22 삼성전자주식회사 Semiconductor device and method for manufacturing the device
KR20140034347A (en) * 2012-08-31 2014-03-20 삼성전자주식회사 Semiconductor device and method for fabricating the same
US9496143B2 (en) 2012-11-06 2016-11-15 Globalfoundries Inc. Metal gate structure for midgap semiconductor device and method of making same
KR102056582B1 (en) * 2013-06-05 2020-01-22 삼성전자 주식회사 Semiconductor device and method for the same
CN104425384B (en) * 2013-09-10 2017-08-01 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and its manufacture method
KR102128450B1 (en) * 2013-11-12 2020-06-30 에스케이하이닉스 주식회사 Method and gate ructure for threshold voltage modulation in transistors
US9219155B2 (en) * 2013-12-16 2015-12-22 Intel Corporation Multi-threshold voltage devices and associated techniques and configurations
CN104766823A (en) * 2014-01-07 2015-07-08 中国科学院微电子研究所 Semiconductor device manufacturing method
US10276562B2 (en) 2014-01-07 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with multiple threshold voltage and method of fabricating the same
US9570579B2 (en) * 2014-02-19 2017-02-14 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structures and methods for multi-level work function
US9620591B2 (en) * 2014-02-19 2017-04-11 Taiwan Semiconductor Manufacturing Company Limited Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive current
US9362180B2 (en) * 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
US9576952B2 (en) * 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
US9455201B2 (en) * 2014-02-25 2016-09-27 Globalfoundries Inc. Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
US10109534B2 (en) * 2014-03-14 2018-10-23 Applied Materials, Inc. Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
US9330938B2 (en) * 2014-07-24 2016-05-03 International Business Machines Corporation Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
US9922880B2 (en) 2014-09-26 2018-03-20 Qualcomm Incorporated Method and apparatus of multi threshold voltage CMOS
CN105826265B (en) 2015-01-09 2019-05-28 中芯国际集成电路制造(上海)有限公司 The forming method of semiconductor devices
KR102211254B1 (en) 2015-02-03 2021-02-04 삼성전자주식회사 Semiconductor device and fabricating method thereof
TWI635535B (en) 2015-03-10 2018-09-11 聯華電子股份有限公司 Semiconductor process of forming metal gates with different threshold voltages and semiconductor structure thereof
US9466610B1 (en) 2015-03-24 2016-10-11 Macronix International Co., Ltd. Method of fabricating three-dimensional gate-all-around vertical gate structures and semiconductor devices, and three-dimensional gate-all-round vertical gate structures and semiconductor devices thereof
KR102358318B1 (en) 2015-06-04 2022-02-04 삼성전자주식회사 Semiconductor device having multi work function gate patterns
KR102290685B1 (en) 2015-06-04 2021-08-17 삼성전자주식회사 Semiconductor device
US9613959B2 (en) * 2015-07-28 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming metal gate to mitigate antenna defect
CN106409677B (en) * 2015-07-30 2020-03-10 中芯国际集成电路制造(上海)有限公司 Semiconductor device and method of forming the same
KR102286112B1 (en) 2015-10-21 2021-08-04 삼성전자주식회사 Semiconductor device and method for fabricating the same
US9590038B1 (en) * 2015-10-23 2017-03-07 Samsung Electronics Co., Ltd. Semiconductor device having nanowire channel
US10490643B2 (en) 2015-11-24 2019-11-26 United Microelectronics Corp. Semiconductor device and method for fabricating the same
KR102474431B1 (en) * 2015-12-08 2022-12-06 삼성전자주식회사 Method of manufacturing semiconductor devices
US10068901B2 (en) * 2016-01-25 2018-09-04 Samsung Electronics Co., Ltd. Semiconductor device including transistors with different threshold voltages
KR102374052B1 (en) 2016-02-26 2022-03-14 삼성전자주식회사 A semiconductor device and methods of manufacturing the same
KR102476143B1 (en) 2016-02-26 2022-12-12 삼성전자주식회사 Semiconductor device
KR102413782B1 (en) * 2016-03-02 2022-06-28 삼성전자주식회사 Semiconductor devices
US9899264B2 (en) * 2016-06-30 2018-02-20 International Business Machines Corporation Integrated metal gate CMOS devices
US9653289B1 (en) 2016-09-19 2017-05-16 International Business Machines Corporation Fabrication of nano-sheet transistors with different threshold voltages
KR102490696B1 (en) * 2016-11-07 2023-01-19 삼성전자주식회사 Semiconductor device and method for fabricating the same
US10553583B2 (en) * 2017-08-28 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Boundary region for high-k-metal-gate(HKMG) integration technology
KR102379707B1 (en) * 2017-09-13 2022-03-28 삼성전자주식회사 semiconductor device
KR102316293B1 (en) * 2017-09-18 2021-10-22 삼성전자주식회사 Semiconductor devices
US10600695B2 (en) * 2018-05-22 2020-03-24 International Business Machines Corporation Channel strain formation in vertical transport FETS with dummy stressor materials
US10629752B1 (en) * 2018-10-11 2020-04-21 Applied Materials, Inc. Gate all-around device
US10763177B1 (en) * 2019-03-01 2020-09-01 International Business Machines Corporation I/O device for gate-all-around transistors
US11075280B2 (en) * 2019-04-17 2021-07-27 International Business Machines Corporation Self-aligned gate and junction for VTFET
KR20210028759A (en) * 2019-09-03 2021-03-15 삼성전자주식회사 Semiconductor devices
JP6950096B2 (en) * 2019-09-13 2021-10-13 株式会社日立ハイテク Manufacturing method of semiconductor equipment and plasma processing equipment
US11257815B2 (en) * 2019-10-31 2022-02-22 Taiwan Semiconductor Manufacturing Company, Ltd. Work function design to increase density of nanosheet devices
US11374090B2 (en) * 2019-10-31 2022-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11133217B1 (en) * 2020-03-27 2021-09-28 International Business Machines Corporation Late gate cut with optimized contact trench size
US11699735B2 (en) * 2020-06-05 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11699736B2 (en) * 2020-06-25 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
US11563083B2 (en) * 2020-08-14 2023-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Dual side contact structures in semiconductor devices
US11658216B2 (en) * 2021-01-14 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for metal gate boundary isolation
KR20230138555A (en) * 2021-03-23 2023-10-05 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3D NAND memory and its manufacturing method
US20220310655A1 (en) * 2021-03-29 2022-09-29 Sandisk Technologies Llc Memory device including a ferroelectric semiconductor channel and methods of forming the same
US20220406909A1 (en) * 2021-06-17 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor with dual silicide and method
US11849578B2 (en) * 2021-07-29 2023-12-19 Sandisk Technologies Llc Three-dimensional memory device with a columnar memory opening arrangement and method of making thereof
KR20230046013A (en) * 2021-09-29 2023-04-05 삼성전자주식회사 Semiconductor devices and manufacturing methods for the same

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US20200035842A1 (en) 2020-01-30
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