SG10201802450PA - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

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Publication number
SG10201802450PA
SG10201802450PA SG10201802450PA SG10201802450PA SG10201802450PA SG 10201802450P A SG10201802450P A SG 10201802450PA SG 10201802450P A SG10201802450P A SG 10201802450PA SG 10201802450P A SG10201802450P A SG 10201802450PA SG 10201802450P A SG10201802450P A SG 10201802450PA
Authority
SG
Singapore
Prior art keywords
work function
transistor
metal layer
function metal
substrate
Prior art date
Application number
SG10201802450PA
Inventor
Lee Dongsoo
Chung Wonkeun
Na Hoonjoo
Bae Suyoung
Song Jaeyeol
Lee Jonghan
JUNG HyungSuk
Hyun Sangjin
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201802450PA publication Critical patent/SG10201802450PA/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
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    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor. [FIG. ] 30
SG10201802450PA 2017-06-23 2018-03-23 Semiconductor device and method of manufacturing the same SG10201802450PA (en)

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Application Number Priority Date Filing Date Title
KR1020170079888A KR102293127B1 (en) 2017-06-23 2017-06-23 Semiconductor device and method for manufacturing the same

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SG10201802450PA true SG10201802450PA (en) 2019-01-30

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US (1) US10461167B2 (en)
KR (1) KR102293127B1 (en)
CN (1) CN109119420B (en)
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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102303302B1 (en) * 2017-04-28 2021-09-16 삼성전자주식회사 Method for fabricating Semiconductor device
DE102018108152A1 (en) * 2017-08-31 2019-02-28 Taiwan Semiconductor Manufacturing Co. Ltd. SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF
KR102341721B1 (en) * 2017-09-08 2021-12-23 삼성전자주식회사 Semiconductor device
US11043567B2 (en) 2017-11-30 2021-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US11239339B2 (en) * 2019-04-29 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and method
KR20200142158A (en) 2019-06-11 2020-12-22 삼성전자주식회사 Semiconductor devices
US11264289B2 (en) * 2019-07-11 2022-03-01 Tokyo Electron Limited Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacks
US12094781B2 (en) * 2019-09-13 2024-09-17 Hitachi High-Tech Corporation Manufacturing method of three-dimensional semiconductor device
US11031292B2 (en) * 2019-09-29 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and related methods
US20210126018A1 (en) * 2019-10-24 2021-04-29 International Business Machines Corporation Gate stack quality for gate-all-around field-effect transistors
KR20210059471A (en) 2019-11-15 2021-05-25 삼성전자주식회사 Integrated circuits and method of manufacturing the same
US11264503B2 (en) * 2019-12-18 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Metal gate structures of semiconductor devices
KR20210129284A (en) * 2020-04-16 2021-10-28 삼성전자주식회사 Semiconductor devices and method of manufacturing the same
US11417766B2 (en) * 2020-04-21 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Transistors having nanostructures
CN113206083A (en) * 2020-05-15 2021-08-03 台湾积体电路制造股份有限公司 Transistor grid and forming method
US11295989B2 (en) 2020-05-26 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structures for semiconductor devices
US11444198B2 (en) * 2020-05-29 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Work function control in gate structures
US12015066B2 (en) 2020-06-17 2024-06-18 Taiwan Semiconductor Manufacturing Co., Ltd. Triple layer high-k gate dielectric stack for workfunction engineering
KR20210156985A (en) 2020-06-19 2021-12-28 삼성전자주식회사 Semiconductor devices including work function layers
US11538805B2 (en) * 2020-06-29 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of tuning threshold voltages of transistors
KR20220023426A (en) * 2020-08-21 2022-03-02 삼성전자주식회사 Semiconductor device
KR20220091655A (en) * 2020-12-23 2022-07-01 삼성전자주식회사 Semiconductor device and method for manufacturing the same
US11688797B2 (en) * 2021-01-04 2023-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and forming method thereof
US11688786B2 (en) 2021-01-22 2023-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11605720B2 (en) 2021-02-26 2023-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate cap
US11810948B2 (en) 2021-03-10 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11948981B2 (en) 2021-07-15 2024-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Seam-filling of metal gates with Si-containing layers

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861712B2 (en) 2003-01-15 2005-03-01 Sharp Laboratories Of America, Inc. MOSFET threshold voltage tuning with metal gate stack control
KR20100037975A (en) * 2008-10-02 2010-04-12 주식회사 하이닉스반도체 Semiconductor device with midgap workfunction gate electrode and method for manufacturing the same
KR101649967B1 (en) * 2010-05-04 2016-08-23 삼성전자주식회사 SEMICONDUCTOR DEVICES HAVING AN e-FUSE STRUCTURE AND METHODS OF FABRICATING THE SAME
DE112011105970B4 (en) * 2011-12-19 2020-12-03 Intel Corporation CMOS implementation from germanium and III-V nanowires and nanobelts in gate all-round architecture
CN104126228B (en) * 2011-12-23 2016-12-07 英特尔公司 Non-planar gate fully-enclosed device and method of making same
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9093558B2 (en) 2012-08-24 2015-07-28 International Business Machines Corporation Integration of multiple threshold voltage devices for complementary metal oxide semiconductor using full metal gate
US8669167B1 (en) * 2012-08-28 2014-03-11 International Business Machines Corporation Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices
KR20140034347A (en) * 2012-08-31 2014-03-20 삼성전자주식회사 Semiconductor device and method for fabricating the same
CN104766823A (en) * 2014-01-07 2015-07-08 中国科学院微电子研究所 Semiconductor device manufacturing method
CN104821296B (en) * 2014-01-30 2017-11-28 中芯国际集成电路制造(上海)有限公司 Semiconductor devices and forming method thereof
KR102190673B1 (en) 2014-03-12 2020-12-14 삼성전자주식회사 Semiconductor element having mid-gap work function metal gate electrode
KR102212267B1 (en) * 2014-03-19 2021-02-04 삼성전자주식회사 Semiconductor device and method for fabricating the same
KR102083632B1 (en) * 2014-04-25 2020-03-03 삼성전자주식회사 Semiconductor device and method for forming the same
EP2953162A1 (en) 2014-06-06 2015-12-09 IMEC vzw Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9209186B1 (en) 2014-06-26 2015-12-08 Globalfoundries Inc. Threshold voltage control for mixed-type non-planar semiconductor devices
US9786774B2 (en) 2014-06-27 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate of gate-all-around transistor
US9443978B2 (en) 2014-07-14 2016-09-13 Samsung Electronics Co., Ltd. Semiconductor device having gate-all-around transistor and method of manufacturing the same
KR102312262B1 (en) 2014-09-02 2021-10-15 삼성전자주식회사 Semiconductor device and method of fabricating the same
KR102211254B1 (en) 2015-02-03 2021-02-04 삼성전자주식회사 Semiconductor device and fabricating method thereof
KR102354460B1 (en) * 2015-02-12 2022-01-24 삼성전자주식회사 Semiconductor device and methods of forming the same
US9502414B2 (en) 2015-02-26 2016-11-22 Qualcomm Incorporated Adjacent device isolation
CN106033745B (en) * 2015-03-19 2020-07-07 联华电子股份有限公司 Semiconductor device and method for forming the same
US9356027B1 (en) * 2015-05-11 2016-05-31 International Business Machines Corporation Dual work function integration for stacked FinFET
KR20160148795A (en) * 2015-06-16 2016-12-27 삼성전자주식회사 Semiconductor device and method for manufacturing the same
CN106409830B (en) * 2015-07-27 2020-05-05 联华电子股份有限公司 Semiconductor element with metal grid and manufacturing method thereof
CN113764526A (en) * 2015-09-25 2021-12-07 英特尔公司 Semiconductor device and method for manufacturing the same
KR102474431B1 (en) * 2015-12-08 2022-12-06 삼성전자주식회사 Method of manufacturing semiconductor devices
KR102434993B1 (en) 2015-12-09 2022-08-24 삼성전자주식회사 Semiconductor device
US9653289B1 (en) * 2016-09-19 2017-05-16 International Business Machines Corporation Fabrication of nano-sheet transistors with different threshold voltages

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