SG10201805477YA - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG10201805477YA SG10201805477YA SG10201805477YA SG10201805477YA SG10201805477YA SG 10201805477Y A SG10201805477Y A SG 10201805477YA SG 10201805477Y A SG10201805477Y A SG 10201805477YA SG 10201805477Y A SG10201805477Y A SG 10201805477YA SG 10201805477Y A SG10201805477Y A SG 10201805477YA
- Authority
- SG
- Singapore
- Prior art keywords
- gate
- dummy channels
- electrodes
- gate electrodes
- substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7889—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Abstract
OF THE DISCLOSURE A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions. FIG. 3
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170090804A KR102373818B1 (en) | 2017-07-18 | 2017-07-18 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201805477YA true SG10201805477YA (en) | 2019-02-27 |
Family
ID=65023449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201805477YA SG10201805477YA (en) | 2017-07-18 | 2018-06-26 | Semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (3) | US10680007B2 (en) |
KR (1) | KR102373818B1 (en) |
CN (1) | CN109273448B (en) |
SG (1) | SG10201805477YA (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102373818B1 (en) * | 2017-07-18 | 2022-03-14 | 삼성전자주식회사 | Semiconductor devices |
KR102414511B1 (en) | 2017-08-02 | 2022-06-30 | 삼성전자주식회사 | Three-dimensional semiconductor devices |
KR102570901B1 (en) * | 2017-11-20 | 2023-08-25 | 삼성전자주식회사 | Three-dimensional semiconductor device |
US10446573B2 (en) * | 2017-11-21 | 2019-10-15 | Macronix International Co., Ltd. | Semiconductor structure and method for forming the same |
WO2019218351A1 (en) * | 2018-05-18 | 2019-11-21 | Yangtze Memory Technologies Co., Ltd. | Staircase formation in three-dimensional memory device |
KR20210016214A (en) | 2019-08-02 | 2021-02-15 | 삼성전자주식회사 | Semiconductor devices |
US10985179B2 (en) * | 2019-08-05 | 2021-04-20 | Micron Technology, Inc. | Memory arrays and methods used in forming a memory array comprising strings of memory cells and operative through-array-vias |
CN110600473A (en) * | 2019-08-26 | 2019-12-20 | 长江存储科技有限责任公司 | Three-dimensional storage structure and manufacturing method thereof |
KR20210027938A (en) * | 2019-09-03 | 2021-03-11 | 에스케이하이닉스 주식회사 | Semiconductor memory device and method for fabricating the same |
KR102653228B1 (en) | 2019-10-15 | 2024-03-29 | 삼성전자주식회사 | Nonvolatile memory device and method for fabricating the same |
CN111448648B (en) | 2020-03-13 | 2021-06-08 | 长江存储科技有限责任公司 | Contact structure for three-dimensional memory |
WO2021212446A1 (en) * | 2020-04-24 | 2021-10-28 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices with drain-select-gate cut structures and methods for forming the same |
KR20210142914A (en) * | 2020-05-19 | 2021-11-26 | 에스케이하이닉스 주식회사 | 3 Dimensional Semiconductor Memory Device |
US20220005827A1 (en) * | 2020-07-06 | 2022-01-06 | Invensas Corporation | Techniques for manufacturing split-cell 3d-nand memory devices |
KR20220062945A (en) * | 2020-11-09 | 2022-05-17 | 에스케이하이닉스 주식회사 | Semiconductor memory device and manufacturing method of the same |
CN113228277B (en) * | 2021-01-21 | 2023-07-21 | 长江存储科技有限责任公司 | Three-dimensional memory device and method of forming the same |
CN114944397A (en) * | 2021-03-22 | 2022-08-26 | 长江存储科技有限责任公司 | Semiconductor device and preparation method thereof |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140063147A (en) | 2012-11-16 | 2014-05-27 | 에스케이하이닉스 주식회사 | Semiconductor device and method for manufacturing the same |
KR101986245B1 (en) | 2013-01-17 | 2019-09-30 | 삼성전자주식회사 | Method of manufacturing a vertical type semiconductor device |
KR102045288B1 (en) | 2013-01-17 | 2019-11-15 | 삼성전자주식회사 | Vertical type semiconductor device |
KR102074982B1 (en) | 2013-04-09 | 2020-02-10 | 에스케이하이닉스 주식회사 | Nonvolatile memory device and method for fabricating the same |
US9240420B2 (en) * | 2013-09-06 | 2016-01-19 | Sandisk Technologies Inc. | 3D non-volatile storage with wide band gap transistor decoder |
KR102101841B1 (en) * | 2013-10-28 | 2020-04-17 | 삼성전자 주식회사 | Vertical type non-volatile memory device |
KR102161814B1 (en) | 2013-11-19 | 2020-10-06 | 삼성전자주식회사 | Vertical memory devices and methods of manufacturing the same |
KR20150116995A (en) | 2014-04-09 | 2015-10-19 | 삼성전자주식회사 | Vertical memory devices |
US9425208B2 (en) * | 2014-04-17 | 2016-08-23 | Samsung Electronics Co., Ltd. | Vertical memory devices |
KR102190350B1 (en) | 2014-05-02 | 2020-12-11 | 삼성전자주식회사 | Semiconductor Memory Device And Method of Fabricating The Same |
KR102192848B1 (en) * | 2014-05-26 | 2020-12-21 | 삼성전자주식회사 | Memory device |
KR102134607B1 (en) | 2014-06-05 | 2020-07-17 | 매크로닉스 인터내셔널 컴퍼니 리미티드 | Ssl/gsl gate oxide in 3d vertical channel nand |
KR102150253B1 (en) * | 2014-06-24 | 2020-09-02 | 삼성전자주식회사 | Semiconductor device |
KR102239602B1 (en) * | 2014-08-12 | 2021-04-14 | 삼성전자주식회사 | Semiconductor Device and Method of fabricating the same |
US9484314B2 (en) * | 2014-08-29 | 2016-11-01 | Sandisk Technologies Llc | Word line hook up with protected air gap |
KR102188501B1 (en) * | 2014-09-02 | 2020-12-09 | 삼성전자주식회사 | Semiconductor device |
US9425205B2 (en) | 2014-09-12 | 2016-08-23 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9478557B1 (en) | 2014-09-24 | 2016-10-25 | Sandisk Technologies Llc | Process for 3D NAND memory with socketed floating gate cells |
US9478561B2 (en) | 2015-01-30 | 2016-10-25 | Samsung Electronics Co., Ltd. | Semiconductor memory device and method of fabricating the same |
KR102378820B1 (en) * | 2015-08-07 | 2022-03-28 | 삼성전자주식회사 | Memory device |
US9647037B2 (en) * | 2015-08-25 | 2017-05-09 | Qualcomm Incorporated | Resistive random access memory device with resistance-based storage element and method of fabricating same |
KR102421728B1 (en) * | 2015-09-10 | 2022-07-18 | 삼성전자주식회사 | Memory device and method of manufacturing the same |
US9711528B2 (en) | 2015-10-06 | 2017-07-18 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9419013B1 (en) * | 2015-10-08 | 2016-08-16 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9496269B1 (en) * | 2015-10-29 | 2016-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Static random access memory |
KR102492979B1 (en) * | 2015-12-11 | 2023-01-31 | 삼성전자주식회사 | Vertical type memory device |
US10049744B2 (en) | 2016-01-08 | 2018-08-14 | Samsung Electronics Co., Ltd. | Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same |
KR102650994B1 (en) * | 2016-10-14 | 2024-03-26 | 삼성전자주식회사 | Memory device |
CN106920794B (en) | 2017-03-08 | 2018-11-30 | 长江存储科技有限责任公司 | A kind of 3D nand memory part and its manufacturing method |
KR102342552B1 (en) * | 2017-03-09 | 2021-12-23 | 삼성전자주식회사 | Three dimensional semiconductor device and metohd of forming the same |
KR102397903B1 (en) * | 2017-07-17 | 2022-05-13 | 삼성전자주식회사 | Semiconductor device including gates |
KR102373818B1 (en) * | 2017-07-18 | 2022-03-14 | 삼성전자주식회사 | Semiconductor devices |
KR102342853B1 (en) * | 2017-07-21 | 2021-12-23 | 삼성전자주식회사 | Integrated circuit device including vertical memory device |
KR102428273B1 (en) * | 2017-08-01 | 2022-08-02 | 삼성전자주식회사 | Three-dimensional semiconductor device |
-
2017
- 2017-07-18 KR KR1020170090804A patent/KR102373818B1/en active IP Right Grant
-
2018
- 2018-03-23 US US15/933,544 patent/US10680007B2/en active Active
- 2018-06-26 SG SG10201805477YA patent/SG10201805477YA/en unknown
- 2018-07-04 CN CN201810725247.8A patent/CN109273448B/en active Active
-
2020
- 2020-06-04 US US16/892,384 patent/US11114463B2/en active Active
-
2021
- 2021-08-05 US US17/394,499 patent/US20210366928A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US11114463B2 (en) | 2021-09-07 |
KR102373818B1 (en) | 2022-03-14 |
US20190027490A1 (en) | 2019-01-24 |
US10680007B2 (en) | 2020-06-09 |
US20200303413A1 (en) | 2020-09-24 |
CN109273448B (en) | 2023-08-22 |
KR20190009070A (en) | 2019-01-28 |
CN109273448A (en) | 2019-01-25 |
US20210366928A1 (en) | 2021-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201805477YA (en) | Semiconductor device | |
SG10201805238RA (en) | Semiconductor device | |
SG10201805116YA (en) | Semiconductor devices and manufacturing methods thereof | |
SG10201805060XA (en) | Semiconductor device and method of manufacturing the same | |
SG10201805010VA (en) | Vertical-Type Memory Device | |
EP3506353A3 (en) | Displaying apparatus having light emitting device | |
WO2018056694A3 (en) | Logic semiconductor device | |
JP2016029710A5 (en) | Semiconductor device and manufacturing method thereof | |
SG10201803186XA (en) | Semiconductor device | |
SG10201803447TA (en) | Semiconductor Device | |
SG10201803941SA (en) | Semiconductor Memory Device And Manufacturing The Same | |
SG10201805428XA (en) | Three-dimensional semiconductor devices including vertical structures with varied spacing and methods of forming the same | |
SG10201804609UA (en) | Semiconductor device and manufacturing method thereof | |
TW201613060A (en) | Semiconductor device having terminals formed on a chip package including a plurality of semiconductor chips and manufacturing method thereof | |
EP2741332A3 (en) | Array substrate and method of fabricating the same | |
SG10201805433WA (en) | Semiconductor device and method of manufacturing the same | |
WO2013028685A3 (en) | Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication | |
TW201614794A (en) | Semiconductor device | |
TW200629544A (en) | Field effect transistor (FET) having wire channels and method of fabricating the same | |
SG10201808204VA (en) | Semiconductor devices and methods of manufacturing the same | |
EP3343614A3 (en) | Standard cell for vertical transistors | |
SG10201804042RA (en) | Semiconductor Memory Devices | |
EP2634811A3 (en) | Field effect transistor | |
SG10201900547YA (en) | Vertical memory devices and methods of manufacturing the same | |
WO2015105049A3 (en) | Semiconductor memory device and method for manufacturing same |