SG10201805428XA - Three-dimensional semiconductor devices including vertical structures with varied spacing and methods of forming the same - Google Patents
Three-dimensional semiconductor devices including vertical structures with varied spacing and methods of forming the sameInfo
- Publication number
- SG10201805428XA SG10201805428XA SG10201805428XA SG10201805428XA SG10201805428XA SG 10201805428X A SG10201805428X A SG 10201805428XA SG 10201805428X A SG10201805428X A SG 10201805428XA SG 10201805428X A SG10201805428X A SG 10201805428XA SG 10201805428X A SG10201805428X A SG 10201805428XA
- Authority
- SG
- Singapore
- Prior art keywords
- columns
- dimensional semiconductor
- vertical structures
- methods
- forming
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A three-dimensional semiconductor device is disclosed. The device may include an electrode structure that can include a plurality of electrodes that are stacked on a substrate and extend in a first direction. Vertical structures can penetrate the electrode structure to provide a plurality of columns spaced apart from each other in a second direction crossing the first direction. The plurality of columns can include first and second edge columns located adjacent to respective opposite edges of the electrode structure, and the plurality of columns can include a center column located between the first and second edge columns. Distances between adjacent ones of the plurality of columns can decrease in a direction from the first and second edge columns toward the center column. FIG. 26
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170098204A KR102414511B1 (en) | 2017-08-02 | 2017-08-02 | Three-dimensional semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201805428XA true SG10201805428XA (en) | 2019-03-28 |
Family
ID=65230394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201805428XA SG10201805428XA (en) | 2017-08-02 | 2018-06-25 | Three-dimensional semiconductor devices including vertical structures with varied spacing and methods of forming the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US10411032B2 (en) |
KR (1) | KR102414511B1 (en) |
CN (1) | CN109390344A (en) |
SG (1) | SG10201805428XA (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161042A (en) * | 2018-03-14 | 2019-09-19 | 東芝メモリ株式会社 | Semiconductor device |
KR102211752B1 (en) * | 2019-02-26 | 2021-02-02 | 삼성전자주식회사 | Three dimensional flash memory including vertical strings with different cross section and manufacturing method thereof |
US11271002B2 (en) * | 2019-04-12 | 2022-03-08 | Micron Technology, Inc. | Methods used in forming a memory array comprising strings of memory cells |
TWI718566B (en) * | 2019-06-21 | 2021-02-11 | 旺宏電子股份有限公司 | 3d memory array device and method for multiply-accumulate |
KR102684115B1 (en) * | 2019-07-19 | 2024-07-12 | 에스케이하이닉스 주식회사 | Semiconductor memory device |
KR20210072276A (en) * | 2019-12-09 | 2021-06-17 | 에스케이하이닉스 주식회사 | Semiconductor memory device and manufacturing method thereof |
KR20220077740A (en) * | 2020-12-02 | 2022-06-09 | 삼성전자주식회사 | Semiconductor device and electronica system including the same |
CN112768489B (en) * | 2021-02-04 | 2021-11-09 | 长江先进存储产业创新中心有限责任公司 | Phase change memory and manufacturing method thereof |
JP2022120425A (en) * | 2021-02-05 | 2022-08-18 | キオクシア株式会社 | semiconductor storage device |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120208347A1 (en) * | 2011-02-11 | 2012-08-16 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory devices and methods of fabricating the same |
KR101936752B1 (en) * | 2012-05-29 | 2019-01-10 | 삼성전자주식회사 | Semiconductor device |
KR102002802B1 (en) | 2012-09-05 | 2019-07-23 | 삼성전자주식회사 | Semiconductor device |
KR102108879B1 (en) | 2013-03-14 | 2020-05-11 | 삼성전자주식회사 | Vertical memory devices and methods of manufacturing the same |
US9082826B2 (en) | 2013-05-24 | 2015-07-14 | Lam Research Corporation | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features |
CN104659207B (en) * | 2013-11-19 | 2019-04-26 | 三星电子株式会社 | Storage device |
KR102128465B1 (en) | 2014-01-03 | 2020-07-09 | 삼성전자주식회사 | Vertical structure non-volatile memory device |
KR102269422B1 (en) * | 2014-05-30 | 2021-06-28 | 삼성전자주식회사 | Semiconductor device |
KR102300728B1 (en) | 2014-10-14 | 2021-09-14 | 삼성전자주식회사 | Semiconductor Memory Device And Method of Fabricating The Same |
US9589979B2 (en) * | 2014-11-19 | 2017-03-07 | Macronix International Co., Ltd. | Vertical and 3D memory devices and methods of manufacturing the same |
US20160240547A1 (en) | 2015-02-18 | 2016-08-18 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
KR20160106972A (en) | 2015-03-03 | 2016-09-13 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method of the same |
JP6290124B2 (en) | 2015-03-12 | 2018-03-07 | 東芝メモリ株式会社 | Semiconductor memory device |
US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
KR102428311B1 (en) | 2015-08-06 | 2022-08-02 | 삼성전자주식회사 | Semiconductor device |
US9837432B2 (en) | 2015-09-09 | 2017-12-05 | Toshiba Memory Corporation | Semiconductor memory device |
US10074665B2 (en) | 2015-09-11 | 2018-09-11 | Toshiba Memory Corporation | Three-dimensional semiconductor memory device including slit with lateral surfaces having periodicity |
KR102485088B1 (en) * | 2015-11-10 | 2023-01-05 | 삼성전자주식회사 | Vertical memory devices and methods of manufacturing the same |
KR102532427B1 (en) * | 2015-12-31 | 2023-05-17 | 삼성전자주식회사 | Semiconductor memory device |
US10049744B2 (en) | 2016-01-08 | 2018-08-14 | Samsung Electronics Co., Ltd. | Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the same |
CN106847821B (en) | 2017-03-07 | 2018-09-14 | 长江存储科技有限责任公司 | Semiconductor structure and forming method thereof |
KR102373818B1 (en) * | 2017-07-18 | 2022-03-14 | 삼성전자주식회사 | Semiconductor devices |
KR20190013025A (en) * | 2017-07-31 | 2019-02-11 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
-
2017
- 2017-08-02 KR KR1020170098204A patent/KR102414511B1/en active IP Right Grant
-
2018
- 2018-05-17 US US15/982,216 patent/US10411032B2/en active Active
- 2018-06-25 SG SG10201805428XA patent/SG10201805428XA/en unknown
- 2018-07-25 CN CN201810825304.XA patent/CN109390344A/en active Pending
-
2019
- 2019-09-06 US US16/563,014 patent/US10886296B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20190014616A (en) | 2019-02-13 |
US10411032B2 (en) | 2019-09-10 |
CN109390344A (en) | 2019-02-26 |
US10886296B2 (en) | 2021-01-05 |
US20190043881A1 (en) | 2019-02-07 |
KR102414511B1 (en) | 2022-06-30 |
US20190393243A1 (en) | 2019-12-26 |
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