SG10201803464XA - Semiconductor memory device and method of manufacturing the same - Google Patents

Semiconductor memory device and method of manufacturing the same

Info

Publication number
SG10201803464XA
SG10201803464XA SG10201803464XA SG10201803464XA SG10201803464XA SG 10201803464X A SG10201803464X A SG 10201803464XA SG 10201803464X A SG10201803464X A SG 10201803464XA SG 10201803464X A SG10201803464X A SG 10201803464XA SG 10201803464X A SG10201803464X A SG 10201803464XA
Authority
SG
Singapore
Prior art keywords
conductive layer
memory device
semiconductor memory
manufacturing
body conductive
Prior art date
Application number
SG10201803464XA
Inventor
Hwang Sung-Min
Lim Joon-Sung
Kim Jihye
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020170073390A external-priority patent/KR20180135526A/en
Priority claimed from KR1020170166233A external-priority patent/KR102533149B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201803464XA publication Critical patent/SG10201803464XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor memory device includes a body conductive layer that includes a cell array portion and a peripheral circuit portion, an electrode structure on the cell array portion of the body conductive layer, vertical structures that penetrate the electrode structure, a residual substrate on the peripheral circuit portion of the body conductive layer, and a connection conductive pattern penetrating the residual substrate. The electrode structure includes a plurality of electrode that are stacked on top of each other. The vertical structures are connected to the cell array portion of the body conductive layer. The connection conductive pattern is connected to the peripheral circuit portion of the body conductive layer. FIG. 2B
SG10201803464XA 2017-06-12 2018-04-25 Semiconductor memory device and method of manufacturing the same SG10201803464XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170073390A KR20180135526A (en) 2017-06-12 2017-06-12 Semiconductor memory device and manufactureing the same
KR1020170166233A KR102533149B1 (en) 2017-12-05 2017-12-05 Semiconductor memory device and manufactureing the same

Publications (1)

Publication Number Publication Date
SG10201803464XA true SG10201803464XA (en) 2019-01-30

Family

ID=64334302

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803464XA SG10201803464XA (en) 2017-06-12 2018-04-25 Semiconductor memory device and method of manufacturing the same

Country Status (5)

Country Link
US (2) US10692881B2 (en)
JP (1) JP6985212B2 (en)
CN (1) CN109037210B (en)
DE (1) DE102018110017B4 (en)
SG (1) SG10201803464XA (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11637122B2 (en) * 2018-05-10 2023-04-25 SK Hynix Inc. Semiconductor device and manufacturing method of semiconductor device
US10651153B2 (en) * 2018-06-18 2020-05-12 Intel Corporation Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding
JP2020126943A (en) * 2019-02-05 2020-08-20 キオクシア株式会社 Semiconductor storage device
JP2020155485A (en) * 2019-03-18 2020-09-24 キオクシア株式会社 Semiconductor device and manufacturing method thereof
KR102649568B1 (en) * 2019-05-03 2024-03-21 에스케이하이닉스 주식회사 Semiconductor device and method for fabricating the same, and memory device and system indlucing the semiconductor device
US11018139B2 (en) * 2019-08-13 2021-05-25 Micron Technology, Inc. Integrated transistors and methods of forming integrated transistors
KR102671791B1 (en) * 2020-01-13 2024-06-04 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method thereof

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199717B2 (en) 1989-09-08 2001-08-20 株式会社東芝 Semiconductor device and method of manufacturing the same
JPH10242410A (en) 1996-12-26 1998-09-11 Sony Corp Semiconductor memory cell and its manufacturing method
TW449869B (en) 1998-06-04 2001-08-11 United Microelectronics Corp Manufacturing method for stacked integrated circuit
JP3614723B2 (en) 1999-08-10 2005-01-26 Ｎｅｃエレクトロニクス株式会社 Manufacturing method of flash memory
TW501227B (en) * 2000-08-11 2002-09-01 Samsung Electronics Co Ltd SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
JP2004221500A (en) * 2003-01-17 2004-08-05 Toshiba Microelectronics Corp Semiconductor device and manufacturing method thereof
JP2004273590A (en) * 2003-03-06 2004-09-30 Seiko Epson Corp Semiconductor device and its fabricating process
KR100604871B1 (en) 2004-06-17 2006-07-31 삼성전자주식회사 Complementary non-volatile memory device, methods of operating and manufacturing the same and logic device and semiconductor device comprising the same
US7462521B2 (en) 2004-11-29 2008-12-09 Walker Andrew J Dual-gate device and method
KR100702012B1 (en) 2005-03-22 2007-03-30 삼성전자주식회사 Srams having buried layer patterns and methods of forming the same
US7605429B2 (en) 2005-04-15 2009-10-20 International Business Machines Corporation Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
KR100895853B1 (en) 2006-09-14 2009-05-06 삼성전자주식회사 Stacked memory and method for forming the same
JP2008078404A (en) 2006-09-21 2008-04-03 Toshiba Corp Semiconductor memory and manufacturing method thereof
JP2008140912A (en) 2006-11-30 2008-06-19 Toshiba Corp Nonvolatile semiconductor memory device
US7791172B2 (en) 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
US9136329B2 (en) 2007-04-19 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with dielectric-sealed doped region
US7910973B2 (en) 2008-03-17 2011-03-22 Kabushiki Kaisha Toshiba Semiconductor storage device
US8012814B2 (en) * 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
CN101685797A (en) * 2008-09-23 2010-03-31 中芯国际集成电路制造(上海)有限公司 Removing method of sacrificial oxide layer and corresponding manufacturing method of semiconductor memory
JP5364336B2 (en) 2008-11-04 2013-12-11 株式会社東芝 Semiconductor memory device
US8299583B2 (en) 2009-03-05 2012-10-30 International Business Machines Corporation Two-sided semiconductor structure
US8178396B2 (en) 2009-03-11 2012-05-15 Micron Technology, Inc. Methods for forming three-dimensional memory devices, and related structures
JP5412506B2 (en) * 2009-03-27 2014-02-12 パナソニック株式会社 Semiconductor device
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
KR101579587B1 (en) 2009-04-01 2015-12-22 삼성전자주식회사 Semiconductor device and method of forming the same
KR101205173B1 (en) * 2009-07-28 2012-11-27 에스케이하이닉스 주식회사 Method for forming semiconductor device
KR101040154B1 (en) 2009-11-04 2011-06-09 한양대학교 산학협력단 3-dimensional flash memory device
US8232599B2 (en) 2010-01-07 2012-07-31 International Business Machines Corporation Bulk substrate FET integrated on CMOS SOI
JP2011204829A (en) 2010-03-25 2011-10-13 Toshiba Corp Semiconductor memory device
JP5025754B2 (en) 2010-03-31 2012-09-12 株式会社東芝 Semiconductor memory device and semiconductor memory device
KR101688598B1 (en) 2010-05-25 2017-01-02 삼성전자주식회사 Three dimensional semiconductor memory device
KR20120003351A (en) 2010-07-02 2012-01-10 삼성전자주식회사 Three dimensional non-volatile memory device and operating method thereof
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
KR20120047325A (en) 2010-11-01 2012-05-11 삼성전자주식회사 Three dimensional semiconductor device and method for manufacturing the same
KR101744127B1 (en) 2010-11-17 2017-06-08 삼성전자주식회사 Semiconductor devices and methods for fabricating the same
KR101190743B1 (en) 2010-12-30 2012-10-12 에스케이하이닉스 주식회사 Nonvolatile memory device and method for fabricating the same
US20120168858A1 (en) 2010-12-30 2012-07-05 Hynix Semiconductor Inc. Non-volatile memory device and method of fabricating the same
JP2012244071A (en) * 2011-05-23 2012-12-10 Semiconductor Components Industries Llc Insulated gate type semiconductor device
US8742481B2 (en) 2011-08-16 2014-06-03 Micron Technology, Inc. Apparatuses and methods comprising a channel region having different minority carrier lifetimes
KR101865566B1 (en) 2011-09-08 2018-06-11 삼성전자주식회사 Methods of manufacturing a vertical memory device
JP2013069953A (en) * 2011-09-26 2013-04-18 Toshiba Corp Nonvolatile semiconductor storage device and nonvolatile semiconductor storage device manufacturing method
KR101878741B1 (en) 2012-01-26 2018-07-16 삼성전자주식회사 Transistor and method of manufacturing the same
TWI529939B (en) * 2012-02-08 2016-04-11 Sony Corp High frequency semiconductor device and its manufacturing method
KR20130095499A (en) * 2012-02-20 2013-08-28 에스케이하이닉스 주식회사 Nonvolatile memory device, method for operating the same and method for fabricating the same
KR20130136249A (en) 2012-06-04 2013-12-12 에스케이하이닉스 주식회사 Semiconductor device and method for manufacturing the same
KR101990904B1 (en) 2012-07-17 2019-06-19 삼성전자주식회사 A vertical type semiconductor device
KR20140025054A (en) 2012-08-21 2014-03-04 에스케이하이닉스 주식회사 Nonvolatile memory device and method for fabricating the same
KR20140025631A (en) 2012-08-21 2014-03-05 에스케이하이닉스 주식회사 Nonvolatile memory device and method for fabricating the same
US8952482B2 (en) 2012-08-30 2015-02-10 Micron Technology, Inc. Three-dimensional devices having reduced contact length
KR20140028969A (en) 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method of the same
KR20140028968A (en) 2012-08-31 2014-03-10 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method of the same
KR102027133B1 (en) 2012-12-13 2019-10-02 에스케이하이닉스 주식회사 Semiconductor device and method of manufacturing the same
KR101979299B1 (en) * 2012-12-26 2019-09-03 에스케이하이닉스 주식회사 Nonvolatile memory device and method of fabricating the same
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US8759899B1 (en) 2013-01-11 2014-06-24 Macronix International Co., Ltd. Integration of 3D stacked IC device with peripheral circuits
US9184096B2 (en) 2013-03-13 2015-11-10 Macronix International Co., Ltd. Semiconductor structure and manufacturing method for the same
JP5842866B2 (en) * 2013-05-29 2016-01-13 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JPWO2014196105A1 (en) 2013-06-03 2017-02-23 パナソニックＩｐマネジメント株式会社 Semiconductor device and manufacturing method thereof
US9449983B2 (en) 2013-12-19 2016-09-20 Sandisk Technologies Llc Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereof
JP2015149413A (en) 2014-02-06 2015-08-20 株式会社東芝 Semiconductor storage device and manufacturing method of the same
US9425208B2 (en) 2014-04-17 2016-08-23 Samsung Electronics Co., Ltd. Vertical memory devices
KR102307487B1 (en) * 2014-06-23 2021-10-05 삼성전자주식회사 Three-dimensional semiconductor memory device and method of fabricating the same
US20160064041A1 (en) 2014-09-02 2016-03-03 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing same
JP6203152B2 (en) 2014-09-12 2017-09-27 東芝メモリ株式会社 Manufacturing method of semiconductor memory device
US9305934B1 (en) 2014-10-17 2016-04-05 Sandisk Technologies Inc. Vertical NAND device containing peripheral devices on epitaxial semiconductor pedestal
KR102217241B1 (en) 2014-11-06 2021-02-18 삼성전자주식회사 Vertical memory devices and methods of manufacturing the same
US9634097B2 (en) 2014-11-25 2017-04-25 Sandisk Technologies Llc 3D NAND with oxide semiconductor channel
KR20160124294A (en) 2015-04-16 2016-10-27 삼성전자주식회사 Semiconductor device including cell region stacked on periperal region and methods for fabricating the same
US9666281B2 (en) 2015-05-08 2017-05-30 Sandisk Technologies Llc Three-dimensional P-I-N memory device and method reading thereof using hole current detection
US9472645B1 (en) * 2015-06-08 2016-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Dual control gate spacer structure for embedded flash memory
US9356043B1 (en) 2015-06-22 2016-05-31 Sandisk Technologies Inc. Three-dimensional memory devices containing memory stack structures with position-independent threshold voltage
JP2017037957A (en) 2015-08-10 2017-02-16 ルネサスエレクトロニクス株式会社 Semiconductor device and method of manufacturing the same
KR20170022481A (en) 2015-08-20 2017-03-02 에스케이하이닉스 주식회사 Semiconductor device and manufacturing method thereof
US9543318B1 (en) 2015-08-21 2017-01-10 Sandisk Technologies Llc Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
US9666596B2 (en) 2015-08-25 2017-05-30 Kabushiki Kaisha Toshiba Semiconductor memory device and method for manufacturing the same
US9502471B1 (en) 2015-08-25 2016-11-22 Sandisk Technologies Llc Multi tier three-dimensional memory devices including vertically shared bit lines
CN106558471B (en) * 2015-09-25 2021-02-26 中芯国际集成电路制造(上海)有限公司 Method for manufacturing semiconductor device
US9601577B1 (en) * 2015-10-08 2017-03-21 Samsung Electronics Co., Ltd. Three-dimensionally integrated circuit devices including oxidation suppression layers
KR102520042B1 (en) * 2015-11-25 2023-04-12 삼성전자주식회사 Three dimensional semiconductor device
US9691781B1 (en) * 2015-12-04 2017-06-27 Sandisk Technologies Llc Vertical resistor in 3D memory device with two-tier stack
KR102432483B1 (en) 2015-12-31 2022-08-12 에스케이하이닉스 주식회사 Data storage device and method of driving the same

Also Published As

Publication number Publication date
JP2019004147A (en) 2019-01-10
US20180358376A1 (en) 2018-12-13
JP6985212B2 (en) 2021-12-22
US20200312877A1 (en) 2020-10-01
CN109037210A (en) 2018-12-18
DE102018110017B4 (en) 2023-09-14
DE102018110017A1 (en) 2018-12-13
CN109037210B (en) 2023-09-05
US10692881B2 (en) 2020-06-23
US10886299B2 (en) 2021-01-05

Similar Documents

Publication Publication Date Title
SG10201803464XA (en) Semiconductor memory device and method of manufacturing the same
SG10201803941SA (en) Semiconductor Memory Device And Manufacturing The Same
SG10201803316YA (en) Three-dimensional semiconductor device
SG10201805433WA (en) Semiconductor device and method of manufacturing the same
SG10201804464UA (en) Three-dimensional semiconductor memory device and method of fabricating the same
SG10201900070UA (en) Semiconductor device and method of forming double-sidedfan-out wafer level package
EP4300597A3 (en) Solar cell module
MX2019010425A (en) Bipolar battery and plate.
SG10201803447TA (en) Semiconductor Device
PH12020500086A1 (en) Electronic device comprising array antenna
PH12016501675B1 (en) Foil-based metallization of solar cells
SG10201900586VA (en) Vertical memory devices and methods of manufacturing the same
EP3125283A3 (en) Semiconductor device and method of forming a reduced thickness semiconductor package
WO2013176960A3 (en) Multi-level contact to a 3d memory array and method of making
WO2015175558A3 (en) Energy storage device and method of production thereof
SG10201805010VA (en) Vertical-Type Memory Device
PH12014000026A1 (en) Semiconductor component and method of manufacture
SG10201805060XA (en) Semiconductor device and method of manufacturing the same
SG10201803458SA (en) Semiconductor memory device and method of manufacturing the same
EP2762441A3 (en) Internal electrical contact for enclosed MEMS devices
WO2015103580A3 (en) Encapsulated conformal electronic systems and devices, and methods of making and using the same
EP2722882A3 (en) Semiconductor devices with impedance matching circuits, and methods of manufacture thereof
SG10201801892YA (en) Semiconductor device and method of manufacturing the same
SG11201907932UA (en) Semiconductor memory device
SG10201805428XA (en) Three-dimensional semiconductor devices including vertical structures with varied spacing and methods of forming the same