JP2016012707A5 - - Google Patents
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- JP2016012707A5 JP2016012707A5 JP2014134918A JP2014134918A JP2016012707A5 JP 2016012707 A5 JP2016012707 A5 JP 2016012707A5 JP 2014134918 A JP2014134918 A JP 2014134918A JP 2014134918 A JP2014134918 A JP 2014134918A JP 2016012707 A5 JP2016012707 A5 JP 2016012707A5
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- photoelectric component
- electrode
- component unit
- photoelectric
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- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000003287 optical Effects 0.000 claims 2
Claims (10)
第一光電部品ユニットと、
第二光電部品ユニットと、
前記第一光電部品ユニットと前記第二光電部品ユニットとの間に形成された第三光電部品ユニットと、
前記第一光電部品ユニットの上に形成され、かつ前記第一光電部品ユニットに電気接続される第一電極と、
前記第二光電部品ユニットの上に形成され、かつ前記第二光電部品ユニットに電気接続される第二電極と、
前記第一電極と前記第二電極との間に形成され、かつ前記第三光電部品ユニットの上に形成され、前記第三光電部品ユニットと電気絶縁状態になっている放熱マットと、
前記第一光電部品ユニット、前記第二光電部品ユニット及び前記第三光電部品ユニットに電気接続される複数個の導電配線構造と、
を含む光電部品。 A photoelectric component,
A first photoelectric component unit;
A second photoelectric component unit;
A third photoelectric component unit formed between the first photoelectric component unit and the second photoelectric component unit;
A first electrode formed on the first photoelectric component unit and electrically connected to the first photoelectric component unit;
A second electrode formed on the second photoelectric component unit and electrically connected to the second photoelectric component unit;
A heat-dissipating mat formed between the first electrode and the second electrode and formed on the third photoelectric component unit and in an electrically insulated state from the third photoelectric component unit;
A plurality of conductive wiring structures electrically connected to the first photoelectric component unit, the second photoelectric component unit and the third photoelectric component unit;
Including photoelectric components.
前記複数個の導電配線構造は互いに完全に離れており、
前記複数個の導電配線構造は、前記第一光電部品ユニット、前記第二光電部品ユニット、前記第三光電部品ユニット、及び前記複数個の第四光電部品ユニットの中の隣接する二つの光電部品ユニットに電気接続される、請求項１に記載の光電部品。 One or more fourth photoelectric component units,
The plurality of conductive wiring structures are completely separated from each other;
The plurality of conductive wiring structures include two adjacent photoelectric component units in the first photoelectric component unit, the second photoelectric component unit, the third photoelectric component unit, and the plurality of fourth photoelectric component units. The photoelectric component according to claim 1, wherein the photoelectric component is electrically connected.
第一半導体層と、
第二半導体層と、
前記第一半導体層と前記第二半導体層との間に形成された活性層とを含む、請求項１に記載の光電部品。 The first photoelectric component unit, the second photoelectric component unit, and the third photoelectric component unit are respectively
A first semiconductor layer;
A second semiconductor layer;
The photoelectric component according to claim 1, comprising an active layer formed between the first semiconductor layer and the second semiconductor layer.
前記放熱マットは前記第二半導体層の上に形成され、かつ第二表面面積を有し、
前記第二表面面積と前記第一表面面積の比は８０〜１００％である、請求項４に記載の光電部品。 The second semiconductor layer has a first surface area;
The heat dissipating mat is formed on the second semiconductor layer and has a second surface area;
The photoelectric component according to claim 4, wherein a ratio of the second surface area to the first surface area is 80 to 100%.
前記第一載置板電極が前記第一電極に接続され、かつ前記第二載置板電極が前記第二電極に接続されてフリップチップ構造を形成する、請求項１に記載の光電部品。 Further comprising a mounting plate having a first mounting plate electrode and a second mounting plate electrode,
The photoelectric component according to claim 1, wherein the first mounting plate electrode is connected to the first electrode, and the second mounting plate electrode is connected to the second electrode to form a flip chip structure.
前記第一光電部品ユニット、前記第二光電部品ユニット及び前記第三光電部品ユニットは前記基板の第一側に位置し、
支持部品は前記基板の第二側に形成され、かつ前記基板の側壁を覆い、
前記放熱マットが前記支持部品及び前記第三光電部品ユニットの上に形成される、請求項１に記載の光電部品。 Further comprising a substrate,
The first photoelectric component unit, the second photoelectric component unit and the third photoelectric component unit are located on the first side of the substrate,
A support component is formed on the second side of the substrate and covers a side wall of the substrate;
The photoelectric component according to claim 1, wherein the heat dissipating mat is formed on the support component and the third photoelectric component unit.
前記第一部分の幅が前記第二部分の幅より広く、及び／または
前記放熱マットがダンベル状に形成される、請求項７に記載の光電部品。 The heat dissipating mat includes a first portion formed on the support component and a second portion formed on the third photoelectric component unit,
The photoelectric component according to claim 7, wherein the width of the first portion is wider than the width of the second portion, and / or the heat dissipating mat is formed in a dumbbell shape.
前記第二電極と電気接続するように前記第二電極の上に形成される第四電極とをさらに含み、
前記第三電極または前記第四電極が前記基板の第一辺縁を超える、請求項７に記載の光電部品。 A third electrode formed on the first electrode so as to be electrically connected to the first electrode;
A fourth electrode formed on the second electrode so as to be electrically connected to the second electrode;
The photoelectric component according to claim 7, wherein the third electrode or the fourth electrode exceeds a first edge of the substrate.
前記光学層は第二辺縁を有し、かつ前記基板の前記第一辺縁が前記第二辺縁の内に形成される、請求項９に記載の光電部品。 An optical layer positioned between the third electrode and the first electrode and between the fourth electrode and the second electrode;
The photoelectric component according to claim 9, wherein the optical layer has a second edge, and the first edge of the substrate is formed within the second edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014134918A JP6529223B2 (en) | 2014-06-30 | 2014-06-30 | Photoelectric parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014134918A JP6529223B2 (en) | 2014-06-30 | 2014-06-30 | Photoelectric parts |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019091081A Division JP6843916B2 (en) | 2019-05-14 | 2019-05-14 | Photoelectric parts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016012707A JP2016012707A (en) | 2016-01-21 |
| JP2016012707A5 true JP2016012707A5 (en) | 2017-08-10 |
| JP6529223B2 JP6529223B2 (en) | 2019-06-12 |
Family
ID=55229215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014134918A Active JP6529223B2 (en) | 2014-06-30 | 2014-06-30 | Photoelectric parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6529223B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6806925B2 (en) * | 2017-04-04 | 2021-01-06 | シグニファイ ホールディング ビー ヴィＳｉｇｎｉｆｙ Ｈｏｌｄｉｎｇ Ｂ．Ｖ． | Manufacturing method of solid-state light emitter package, lamp, luminaire, and solid-state light emitter package |
| JP6928233B2 (en) | 2017-04-05 | 2021-09-01 | 日亜化学工業株式会社 | Light emitting device |
| JP7233859B2 (en) * | 2017-06-20 | 2023-03-07 | 旭化成エレクトロニクス株式会社 | infrared light emitting diode |
| JP6822429B2 (en) | 2018-02-19 | 2021-01-27 | 日亜化学工業株式会社 | Light emitting element |
| JP6717324B2 (en) | 2018-02-27 | 2020-07-01 | 日亜化学工業株式会社 | Light emitting element |
| JP7206628B2 (en) * | 2018-04-27 | 2023-01-18 | セイコーエプソン株式会社 | Light-emitting device and projector |
| JPWO2020174949A1 (en) * | 2019-02-26 | 2020-09-03 | ||
| JP6843916B2 (en) * | 2019-05-14 | 2021-03-17 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | Photoelectric parts |
| JP7319551B2 (en) * | 2020-03-31 | 2023-08-02 | 日亜化学工業株式会社 | light emitting device |
| JP7177360B2 (en) | 2020-07-22 | 2022-11-24 | 日亜化学工業株式会社 | Light-emitting element and light-emitting device |
| JP7223046B2 (en) * | 2021-02-24 | 2023-02-15 | 晶元光電股▲ふん▼有限公司 | photoelectric components |
Family Cites Families (17)
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| JP4045767B2 (en) * | 2001-09-28 | 2008-02-13 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| JP3822545B2 (en) * | 2002-04-12 | 2006-09-20 | 士郎 酒井 | Light emitting device |
| JP2004356237A (en) * | 2003-05-27 | 2004-12-16 | Matsushita Electric Works Ltd | Semiconductor light emitting element |
| DE112005002889B4 (en) * | 2004-12-14 | 2015-07-23 | Seoul Viosys Co., Ltd. | Light emitting device with a plurality of light emitting cells and assembly assembly thereof |
| US7221044B2 (en) * | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
| TWI244228B (en) * | 2005-02-03 | 2005-11-21 | United Epitaxy Co Ltd | Light emitting device and manufacture method thereof |
| JP2008135694A (en) * | 2006-10-31 | 2008-06-12 | Hitachi Cable Ltd | Led module |
| CN101226972B (en) * | 2007-01-16 | 2011-01-12 | 台达电子工业股份有限公司 | LED device and preparing process thereof |
| US7768020B2 (en) * | 2007-03-13 | 2010-08-03 | Seoul Opto Device Co., Ltd. | AC light emitting diode |
| DE102008021403A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor body and method for its production |
| TWI414088B (en) * | 2009-12-16 | 2013-11-01 | Epistar Corp | Light-emitting device and the manufacturing method thereof |
| KR20110130851A (en) * | 2010-05-28 | 2011-12-06 | 삼성전자주식회사 | Light emitting device, light emitting system comprising the same, and method of fabricating thereof |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| US8299488B2 (en) * | 2010-12-16 | 2012-10-30 | King Dragon International Inc. | LED chip |
| US8735189B2 (en) * | 2012-05-17 | 2014-05-27 | Starlite LED Inc | Flip light emitting diode chip and method of fabricating the same |
| CN103975451B (en) * | 2012-07-18 | 2016-10-12 | 世迈克琉明有限公司 | The method manufacturing light emitting semiconductor device |
| KR20140073351A (en) * | 2012-12-06 | 2014-06-16 | 엘지이노텍 주식회사 | Light Emitting Device |
-
2014
- 2014-06-30 JP JP2014134918A patent/JP6529223B2/en active Active
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