JP2012015480A5 - - Google Patents

Download PDF

Info

Publication number
JP2012015480A5
JP2012015480A5 JP2010259153A JP2010259153A JP2012015480A5 JP 2012015480 A5 JP2012015480 A5 JP 2012015480A5 JP 2010259153 A JP2010259153 A JP 2010259153A JP 2010259153 A JP2010259153 A JP 2010259153A JP 2012015480 A5 JP2012015480 A5 JP 2012015480A5
Authority
JP
Japan
Prior art keywords
semiconductor
units
unit
electrode pad
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010259153A
Other languages
Japanese (ja)
Other versions
JP2012015480A (en
Filing date
Publication date
Priority claimed from US12/830,059 external-priority patent/US9324691B2/en
Application filed filed Critical
Publication of JP2012015480A publication Critical patent/JP2012015480A/en
Publication of JP2012015480A5 publication Critical patent/JP2012015480A5/ja
Pending legal-status Critical Current

Links

Claims (10)

光電素子であって、
基板と、
前記基板に位置し且つ互いに電気的に接続される複数の半導体ユニットであって、前記複数の半導体ユニットの各々は、第一半導体層、第二半導体層、及び、前記第一半導体層と前記第二半導体層との間における活性領域を有する、複数の半導体ユニットと、
それぞれ前記第一半導体層に位置する複数の第一電極と、
それぞれ前記第二半導体層に位置する複数の第二電極と、
を含み、
前記複数の第一電極のうちの少なくとも一つは、互いに分離した複数の第一延在部を含み、
前記複数の第二電極のうちの少なくとも一つは、第二延在部を含む、光電素子。
A photoelectric element,
A substrate,
A plurality of semiconductor units located on the substrate and electrically connected to each other, wherein each of the plurality of semiconductor units includes a first semiconductor layer, a second semiconductor layer, and the first semiconductor layer and the first semiconductor layer; A plurality of semiconductor units having an active region between the two semiconductor layers ;
A plurality of first electrodes each positioned in the first semiconductor layer;
A plurality of second electrodes each positioned in the second semiconductor layer;
Including
At least one of the plurality of first electrodes includes a plurality of first extending portions separated from each other,
At least one of the plurality of second electrodes is a photoelectric element including a second extending portion .
二つの隣接する半導体ユニットの間に形成され、前記二つの隣接する半導体ユニットを電気的に直列接続する複数の連結部を更に含み、
前記複数の連結部は、それぞれ、前記複数の第一延在部とは、一対一の接続を形成する、請求項1に記載の光電素子。
A plurality of connecting portions formed between two adjacent semiconductor units and electrically connecting the two adjacent semiconductor units in series;
2. The photoelectric device according to claim 1 , wherein each of the plurality of connecting portions forms a one-to-one connection with the plurality of first extending portions .
前記複数の半導体ユニットは、少なくとも二種類の異なる形状を有する請求項に記載の光電素子。 It said plurality of semiconductor units have at least two different shapes, the photoelectric element according to claim 1. 前記第一延在部及び前記第二延在部のうちの少なくとも一つは、直線延在部、又は、前記複数の半導体ユニットの任意の一辺に平行でない曲線延在部を含み、
前記第一延在部及び前記第二延在部のうちの少なくとも一つは、二級延在部を含む請求項1に記載の光電素子。
At least one of the first extension part and the second extension part includes a linear extension part, or a curved extension part that is not parallel to any one side of the plurality of semiconductor units ,
Wherein at least one of the first extending portion and the second extending portion includes a secondary extension unit, the photoelectric element according to claim 1.
前記第一延在部又は前記第二延在部は、直線延在部、又は、前記複数の半導体ユニットの任意の一辺に平行でない曲線延在部を含む、請求項1に記載の光電素子。2. The photoelectric device according to claim 1, wherein the first extension portion or the second extension portion includes a linear extension portion or a curved extension portion that is not parallel to any one side of the plurality of semiconductor units. 前記複数の半導体ユニットは、第一半導体ユニットと、第二半導体ユニットと、第三半導体ユニットと、を含み、
前記複数の第一電極のうちの一つは、第一電極パッドを有し、前記第一電極パッドは、前記第一半導体ユニットに位置し、前記第一半導体ユニットは、前記基板のコーナー領域に位置し、
前記複数の第二電極のうちの一つは、第二電極パッドを有し、前記第二電極パッドは、前記第二半導体ユニットに位置し、前記第二半導体ユニットは、前記基板の他のコーナー領域に位置し、
前記第一延在部及び前記第二延在部は、電極パッドがない前記第三半導体ユニットに位置する、請求項1に記載の光電素子
The plurality of semiconductor units include a first semiconductor unit, a second semiconductor unit, and a third semiconductor unit,
One of the plurality of first electrodes has a first electrode pad, the first electrode pad is located in the first semiconductor unit, and the first semiconductor unit is in a corner region of the substrate. Position to,
One of the plurality of second electrodes has a second electrode pad, the second electrode pad is located in the second semiconductor unit, and the second semiconductor unit is connected to another corner of the substrate. Located in the area
2. The photoelectric device according to claim 1, wherein the first extension portion and the second extension portion are located in the third semiconductor unit having no electrode pad .
前記第一半導体ユニットに位置する前記第一電極は、更に、前記第一電極パッドに接触する延在部を含み、且つ/又は、前記第二半導体ユニットに位置する前記第二電極は、更に、前記第二電極パッドに接触する延在部を含む、請求項6に記載の光電素子 The first electrode located in the first semiconductor unit further includes an extending portion that contacts the first electrode pad, and / or the second electrode located in the second semiconductor unit further includes: The photoelectric device according to claim 6, comprising an extending portion that contacts the second electrode pad . 前記複数の半導体ユニットのいずれか一つにある、前記第一延在部は、該半導体ユニットの第一辺から該第一辺に相対する第二辺に延び、前記第二延在部は、該半導体ユニットの前記第二辺から前記第一辺に延びる、請求項1に記載の光電素子。The first extending portion in any one of the plurality of semiconductor units extends from a first side of the semiconductor unit to a second side opposite to the first side, and the second extending portion is The photoelectric element according to claim 1, which extends from the second side of the semiconductor unit to the first side. 前記複数の半導体ユニットは、異なる電極の配置構造を含む、請求項1に記載の光電素子 The photoelectric device according to claim 1, wherein the plurality of semiconductor units include different electrode arrangement structures . 前記複数の半導体ユニットは、第一行と、該第一行に平行な第二行とに配列され、  The plurality of semiconductor units are arranged in a first row and a second row parallel to the first row,
前記第一行に含まれる半導体ユニットの総数は、前記第二行に含まれる半導体ユニットの総数とは異なる、請求項1に記載の光電素子。  The photoelectric device according to claim 1, wherein a total number of semiconductor units included in the first row is different from a total number of semiconductor units included in the second row.
JP2010259153A 2010-07-02 2010-11-19 Photoelectric element Pending JP2012015480A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/830,059 2010-07-02
US12/830,059 US9324691B2 (en) 2009-10-20 2010-07-02 Optoelectronic device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015195552A Division JP6255372B2 (en) 2010-07-02 2015-10-01 Photoelectric element

Publications (2)

Publication Number Publication Date
JP2012015480A JP2012015480A (en) 2012-01-19
JP2012015480A5 true JP2012015480A5 (en) 2014-01-09

Family

ID=45349596

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010259153A Pending JP2012015480A (en) 2010-07-02 2010-11-19 Photoelectric element
JP2015195552A Active JP6255372B2 (en) 2010-07-02 2015-10-01 Photoelectric element
JP2020047220A Active JP7001728B2 (en) 2010-07-02 2020-03-18 Photoelectric element

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015195552A Active JP6255372B2 (en) 2010-07-02 2015-10-01 Photoelectric element
JP2020047220A Active JP7001728B2 (en) 2010-07-02 2020-03-18 Photoelectric element

Country Status (5)

Country Link
JP (3) JP2012015480A (en)
KR (4) KR101616098B1 (en)
CN (2) CN105977272B (en)
DE (1) DE102010060269B4 (en)
TW (3) TWI446527B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI446527B (en) * 2010-07-02 2014-07-21 Epistar Corp An optoelectronic device
KR20140059985A (en) * 2012-11-09 2014-05-19 엘지이노텍 주식회사 Light emitting device
KR101992366B1 (en) * 2012-12-27 2019-06-24 엘지이노텍 주식회사 Light emitting device
TWI597864B (en) 2013-08-27 2017-09-01 晶元光電股份有限公司 Light-emitting element having a plurality of light-emitting structures
TWI633683B (en) * 2013-08-27 2018-08-21 晶元光電股份有限公司 Light-emitting element having a plurality of light-emitting structures
CN104425538B (en) * 2013-09-03 2019-05-03 晶元光电股份有限公司 Light-emitting component with multiple light emitting structures
CN110176469B (en) * 2013-11-29 2022-01-04 晶元光电股份有限公司 Light emitting diode element
JP6351520B2 (en) * 2014-08-07 2018-07-04 株式会社東芝 Semiconductor light emitting device
CN110690242B (en) * 2015-02-13 2023-06-30 首尔伟傲世有限公司 Light-emitting element
KR102647673B1 (en) * 2016-09-27 2024-03-14 서울바이오시스 주식회사 Light emitting diode
KR102480220B1 (en) * 2016-04-08 2022-12-26 삼성전자주식회사 Lighting emitting diode module and display panel
KR101987196B1 (en) * 2016-06-14 2019-06-11 삼성디스플레이 주식회사 Pixel structure, display apparatus including the pixel structure and method of manufacturing the same
KR102363036B1 (en) * 2017-04-03 2022-02-15 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device and semiconductor device package
CN107516701B (en) * 2017-07-14 2019-06-11 华灿光电(苏州)有限公司 A kind of high pressure light-emitting diode chip and preparation method thereof
TWI731163B (en) * 2017-09-13 2021-06-21 晶元光電股份有限公司 Semiconductor device

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126483A (en) * 1974-08-29 1976-03-04 Mitsubishi Electric Corp
JPH10107316A (en) * 1996-10-01 1998-04-24 Toyoda Gosei Co Ltd Semiconductor light-emitting device of iii group nitride
JP4810746B2 (en) * 2000-03-31 2011-11-09 豊田合成株式会社 Group III nitride compound semiconductor device
US6777805B2 (en) * 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
US6547249B2 (en) * 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP3822545B2 (en) * 2002-04-12 2006-09-20 士郎 酒井 Light emitting device
JP4585014B2 (en) * 2002-04-12 2010-11-24 ソウル セミコンダクター カンパニー リミテッド Light emitting device
US7417259B2 (en) * 2002-08-29 2008-08-26 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting elements
JP4415575B2 (en) 2003-06-25 2010-02-17 日亜化学工業株式会社 Semiconductor light emitting element and light emitting device using the same
JP4572604B2 (en) * 2003-06-30 2010-11-04 日亜化学工業株式会社 Semiconductor light emitting element and light emitting device using the same
JP4160881B2 (en) * 2003-08-28 2008-10-08 松下電器産業株式会社 Semiconductor light emitting device, light emitting module, lighting device, and method for manufacturing semiconductor light emitting device
WO2005022654A2 (en) * 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP4432413B2 (en) * 2003-09-05 2010-03-17 日亜化学工業株式会社 Light source device and vehicle headlamp
WO2005062389A2 (en) * 2003-12-24 2005-07-07 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
KR100665116B1 (en) * 2005-01-27 2007-01-09 삼성전기주식회사 Galium Nitride-Based Light Emitting Device Having LED for ESD Protection
KR100652864B1 (en) * 2005-12-16 2006-12-04 서울옵토디바이스주식회사 Light emitting diode having an improved transparent electrode structure for ac power operation
DE102006015117A1 (en) * 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting optoelectronic headlights, has gallium nitride based light emitting diode chip, which has two emission areas
KR100833309B1 (en) * 2006-04-04 2008-05-28 삼성전기주식회사 Nitride semiconductor light emitting device
EP2111641B1 (en) * 2007-01-22 2017-08-30 Cree, Inc. Illumination devices using externally interconnected arrays of light emitting devices, and method of fabricating same
CN102779918B (en) * 2007-02-01 2015-09-02 日亚化学工业株式会社 Semiconductor light-emitting elements
KR100974923B1 (en) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 Light emitting diode
JP2009231135A (en) * 2008-03-24 2009-10-08 Toshiba Lighting & Technology Corp Illumination device
JP5229034B2 (en) * 2008-03-28 2013-07-03 サンケン電気株式会社 Light emitting device
KR101025972B1 (en) * 2008-06-30 2011-03-30 삼성엘이디 주식회사 Ac driving light emitting device
US20110121329A1 (en) * 2008-08-06 2011-05-26 Helio Optoelectronics Corporation AC LED Structure
JP5217787B2 (en) * 2008-08-27 2013-06-19 日亜化学工業株式会社 Semiconductor light emitting device
WO2010050694A2 (en) * 2008-10-29 2010-05-06 서울옵토디바이스주식회사 Light emitting diode
US8963175B2 (en) * 2008-11-06 2015-02-24 Samsung Electro-Mechanics Co., Ltd. Light emitting device and method of manufacturing the same
KR101020910B1 (en) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP4566267B1 (en) * 2009-04-21 2010-10-20 シャープ株式会社 Power supply
US9324691B2 (en) * 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
WO2011115361A2 (en) * 2010-03-15 2011-09-22 서울옵토디바이스주식회사 Light-emitting device having a plurality of light-emitting cells
TWI446527B (en) * 2010-07-02 2014-07-21 Epistar Corp An optoelectronic device
JP5997737B2 (en) * 2014-03-28 2016-09-28 株式会社インフォシティ Content playback device

Similar Documents

Publication Publication Date Title
JP2012015480A5 (en)
JP2014096591A5 (en)
EP2731137A3 (en) Light emitting device
JP2016092411A5 (en)
JP2011171739A5 (en)
JP2014093532A5 (en)
JP2014131041A5 (en)
EP1973161A3 (en) Light emitting diode
JP2011181925A5 (en)
JP2013153189A5 (en)
JP2016039365A5 (en)
JP2010093109A5 (en)
JP2013106048A5 (en)
JP2012064849A5 (en)
TWI456807B (en) Semiconductor light emitting device
JP2013055318A5 (en)
JP2014235133A5 (en)
JP2012049545A5 (en)
JP2012253318A5 (en)
JP2013098561A5 (en)
JP2016012707A5 (en)
JP2009231513A5 (en)
JP2015153928A5 (en)
WO2011159080A3 (en) Capacitive touch sensor
EP2562813A3 (en) LED array capable of reducing uneven brightness distribution